Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 13
1
- Semiconductors, 2009, v. 43, n. 13, p. 1628, doi. 10.1134/S1063782609130028
- Morozova, N.;
- Danilevich, N.;
- Semenov, V.;
- Galstyan, V.;
- Oleshko, V.;
- Vil’chinskaya, S.;
- Lisitsyn, V.
- Article
2
- Semiconductors, 2009, v. 43, n. 13, p. 1732, doi. 10.1134/S1063782609130259
- Verner, V.;
- Gaidukov, G.;
- Pagin, P.
- Article
3
- Semiconductors, 2009, v. 43, n. 13, p. 1682, doi. 10.1134/S1063782609130144
- Khainovskii, V.;
- Ignat’eva, E.;
- Uzdovskii, V.
- Article
4
- Semiconductors, 2009, v. 43, n. 13, p. 1700, doi. 10.1134/S1063782609130181
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5
- Semiconductors, 2009, v. 43, n. 13, p. 1647, doi. 10.1134/S1063782609130053
- Ermoshin, I.;
- Tsyplenkov, I.;
- Sveshnikov, Yu.
- Article
6
- Semiconductors, 2009, v. 43, n. 13, p. 1663, doi. 10.1134/S1063782609130107
- Guminov, N.;
- Starosel’skii, V.
- Article
7
- Semiconductors, 2009, v. 43, n. 13, p. 1660, doi. 10.1134/S1063782609130090
- Belov, A.;
- Demidov, Yu.;
- Putrya, M.;
- Golishnikov, A.;
- Vasilyev, A.
- Article
8
- Semiconductors, 2009, v. 43, n. 13, p. 1654, doi. 10.1134/S1063782609130077
- Article
9
- Semiconductors, 2009, v. 43, n. 13, p. 1641, doi. 10.1134/S1063782609130041
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10
- Semiconductors, 2009, v. 43, n. 13, p. 1671, doi. 10.1134/S1063782609130120
- Niskov, V.;
- Zolotarev, S.;
- Gashkov, A.
- Article
11
- Semiconductors, 2009, v. 43, n. 13, p. 1687, doi. 10.1134/S1063782609130156
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12
- Semiconductors, 2009, v. 43, n. 13, p. 1728, doi. 10.1134/S1063782609130247
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13
- Semiconductors, 2009, v. 43, n. 13, p. 1635, doi. 10.1134/S106378260913003X
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14
- Semiconductors, 2009, v. 43, n. 13, p. 1737, doi. 10.1134/S1063782609130260
- Gorlov, M.;
- Smirnov, D.;
- Koz’yakov, N.
- Article
15
- Semiconductors, 2009, v. 43, n. 13, p. 1650, doi. 10.1134/S1063782609130065
- Khabibullin, I.;
- Schmidt, E.;
- Matukhin, V.
- Article
16
- Semiconductors, 2009, v. 43, n. 13, p. 1725, doi. 10.1134/S1063782609130235
- Article
17
- Semiconductors, 2009, v. 43, n. 13, p. 1657, doi. 10.1134/S1063782609130089
- Gavrilov, S.;
- Nazarkin, M.;
- Sagunova, I.;
- Artemova, E.
- Article
18
- Semiconductors, 2009, v. 43, n. 13, p. 1690, doi. 10.1134/S1063782609130168
- Gridin, V.;
- Ryzhikov, I.;
- Vinogradov, V.
- Article
19
- Semiconductors, 2009, v. 43, n. 13, p. 1623, doi. 10.1134/S1063782609130016
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20
- Semiconductors, 2009, v. 43, n. 13, p. 1677, doi. 10.1134/S1063782609130132
- Usanov, D.;
- Skripal’, A.;
- Abramov, A.;
- Bogolyubov, A.;
- Kulikov, M.
- Article
21
- Semiconductors, 2009, v. 43, n. 13, p. 1667, doi. 10.1134/S1063782609130119
- Katsoev, L.;
- Katsoev, V.;
- Il’ichev, É.
- Article
22
- Semiconductors, 2009, v. 43, n. 13, p. 1704, doi. 10.1134/S1063782609130193
- Kostritskii, S.;
- Korkishko, Yu.;
- Fedorov, V.;
- Frolova, M.;
- Korepanov, N.;
- Moretti, P.
- Article
23
- Semiconductors, 2009, v. 43, n. 13, p. 1695, doi. 10.1134/S106378260913017X
- Goryachev, A.;
- Chinenkov, M.;
- Dyuzhev, N.;
- Mednikov, A.;
- Popkov, A.;
- Pudonin, F.
- Article
24
- Semiconductors, 2009, v. 43, n. 13, p. 1709, doi. 10.1134/S106378260913020X
- Petrosjanc, K.;
- Torgovnikov, R.
- Article
25
- Semiconductors, 2009, v. 43, n. 13, p. 1714, doi. 10.1134/S1063782609130211
- Ageeva, S.;
- Bobrinetskii, I.;
- Nevolin, V.;
- Podgaetskii, V.;
- Selishchev, S.;
- Simunin, M.;
- Konov, V.;
- Savranskii, V.
- Article
26
- Semiconductors, 2009, v. 43, n. 13, p. 1719, doi. 10.1134/S1063782609130223
- Article