Obtainment of textured films of aluminum nitride by thermochemical nitridation of sapphire.
- Published in:
- Semiconductors, 2009, v. 43, n. 12, p. 1606, doi. 10.1134/S1063782609120069
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 12
Results: 8
1
2
High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures.
- Published in:
- Semiconductors, 2009, v. 43, n. 12, p. 1602, doi. 10.1134/S1063782609120057
- By:
- Publication type:
- Article
3
Nernst-ettingshausen tensor in Sb<sub>2</sub>Te<sub>3</sub> single crystal.
- Published in:
- Semiconductors, 2009, v. 43, n. 12, p. 1585, doi. 10.1134/S1063782609120021
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- Publication type:
- Article
4
Semiconductor nanowhiskers: Synthesis, properties, and applications.
- Published in:
- Semiconductors, 2009, v. 43, n. 12, p. 1539, doi. 10.1134/S106378260912001X
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- Publication type:
- Article
5
Interaction of electrons with optical phonons localized in a quantum well.
- Published in:
- Semiconductors, 2009, v. 43, n. 12, p. 1590, doi. 10.1134/S1063782609120033
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- Publication type:
- Article
6
Temperature and current dependences of the lasing spectrum’s width of quantum dot lasers.
- Published in:
- Semiconductors, 2009, v. 43, n. 12, p. 1597, doi. 10.1134/S1063782609120045
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- Publication type:
- Article
7
GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process.
- Published in:
- Semiconductors, 2009, v. 43, n. 12, p. 1617, doi. 10.1134/S1063782609120082
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- Publication type:
- Article
8
Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions.
- Published in:
- Semiconductors, 2009, v. 43, n. 12, p. 1610, doi. 10.1134/S1063782609120070
- By:
- Publication type:
- Article