Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 11

Results: 23

Influence of the dielectric phase on the photoluminescence spectrum of fractally structured nanocomposite lead selenide films.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1437, doi. 10.1134/S1063782609110086

By:

Tropina, N. E.;
Petrovskaya, Z. N.;
Chernoglazova, I. O.

Publication type:

Article

Growth of ZnO nanocrystals by pulsed laser deposition on sapphire and silicon and the infrared spectra of the nanocrystals.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1532, doi. 10.1134/S1063782609110232

By:

Bazhenov, A. V.;
Fursova, T. N.;
Maksimuk, M. Yu.;
Kaidashev, E. M.;
Kaidashev, V. E.;
Misochko, O. V.

Publication type:

Article

Growing FeIn2S4 single crystals and fabrication of photosensitive structures on their basis.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1510, doi. 10.1134/S1063782609110190

By:

Bodnar, I. V.;
Pavlyukovets, S. A.;
Rud, V. Yu.;
Rud, Yu. V.

Publication type:

Article

Photosensitive structures on single crystals of MnIn2S4: Preparation and properties.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1506, doi. 10.1134/S1063782609110189

By:

Bodnar, I. V.;
Rud, V. Yu.;
Rud, Yu. V.

Publication type:

Article

Photoluminescence of CdSe nanoparticles in porous GaP.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1433, doi. 10.1134/S1063782609110074

By:

Bacherikov, Yu. Yu.;
Okhrimenko, O. V.;
Optasyuk, S. V.;
Yatsenko, Yu. I.;
Kidalov, V. V.;
Kolominska, E. V.;
Vaksman, Yu. F.

Publication type:

Article

Field diffusion and nonequilibrium electron transport in polymers.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1466, doi. 10.1134/S1063782609110116

By:

Nikitenko, V. R.;
Tyutnev, A. P.;
Korolev, N. A.

Publication type:

Article

Effect of uniaxial stress on intervalley phonon-assisted relaxation of excited shallow-donor states in silicon.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1410, doi. 10.1134/S1063782609110037

By:

Tsyplenkov, V. V.;
Kovalevsky, K. A.;
Shastin, V. N.

Publication type:

Article

Structure and kinetics of crystallization of thin amorphous films of Yb1− xSm xAs4S7.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1492, doi. 10.1134/S1063782609110153

By:

Hajiyev, E. Sh.;
Madadzadeh, A. I.;
Ismayilov, J. I.

Publication type:

Article

Superconducting properties of silicon nanostructures.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1441, doi. 10.1134/S1063782609110098

By:

Bagraev, N. T.;
Klyachkin, L. E.;
Koudryavtsev, A. A.;
Malyarenko, A. M.;
Romanov, V. V.

Publication type:

Article

Quantum supercurrent and Andreev reflection in silicon nanostructures.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1455, doi. 10.1134/S1063782609110104

By:

Bagraev, N. T.;
Klyachkin, L. E.;
Koudryavtsev, A. A.;
Malyarenko, A. M.;
Oganesyan, G. A.;
Poloskin, D. S.

Publication type:

Article

Effect of the electric field on the intensity and spectrum of emission from InGaN/GaN quantum wells.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1499, doi. 10.1134/S1063782609110177

By:

Bochkareva, N. I.;
Bogatov, A. L.;
Gorbunov, R. I.;
Latyshev, F. E.;
Zubrilov, A. S.;
Tsyuk, A. I.;
Klochkov, A. V.;
Lelikov, Y. S.;
Rebane, Y. T.;
Shreter, Y. G.

Publication type:

Article

Optical and structural properties of thin films precipitated from the sol of silicon nanoparticles.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1420, doi. 10.1134/S1063782609110050

By:

Dorofeev, S. G.;
Kononov, N. N.;
Ishchenko, A. A.;
Vasil'ev, R. B.;
Goldschtrakh, M. A.;
Zaitseva, K. V.;
Koltashev, V. V.;
Plotnichenko, V. G.;
Tikhonevich, O. V.

Publication type:

Article

Photosemiconducting properties of holographic media based on ferrocenyl-containing cooligomers of glycidyl carbazole with these oligomers sensitized by organic dye.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1473, doi. 10.1134/S1063782609110128

By:

Davidenko, N. A.;
Dehtarenko, S. V.;
Getmanchuk, Yu. P.;
Ishchenko, A. A.;
Kozinetz, A. V.;
Kostenko, L. I.;
Mokrinskaya, E. V.;
Studzinsky, S. L.;
Skryshevsky, V. A.;
Skulsky, N. A.;
Tretyak, O. V.;
Chuprina, N. G.

Publication type:

Article

Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1526, doi. 10.1134/S1063782609110220

By:

Suprun, S. P.;
Sherstyakova, V. N.;
Fedosenko, E. V.

Publication type:

Article

Interphase interactions and the mechanism of current flow in Au-TiB x-AuGe- n-GaP ohmic contacts.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1428, doi. 10.1134/S1063782609110062

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Kamalov, A. B.;
Kapitanchuk, L. M.;
Kladko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Milenin, V. V.;
Nasyrov, M. U.;
Nevolin, P. V.

Publication type:

Article

Special features of the mechanism of defect formation in CdS single crystals subjected to irradiation with high doses of fast reactor neutrons.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1401, doi. 10.1134/S1063782609110013

By:

Davydyuk, H. Ye.;
Kevshyn, A. H.;
Bozhko, V. V.;
Halyan, V. V.

Publication type:

Article

Modification of the spectrum of electronic states in polycrystalline p-CdTe as a result of annealing in Cd vapors or natural aging.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1484, doi. 10.1134/S1063782609110141

By:

Kolosov, S. A.;
Klevkov, Yu. V.;
Klokov, A. Yu.;
Krivobok, V. S.;
Sharkov, A. I.

Publication type:

Article

Injection currents in amorphous alloys of the Se-S system.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1479, doi. 10.1134/S106378260911013X

By:

Djalilov, N. Z.;
Damirov, G. M.

Publication type:

Article

Reflecting p-contact based on thin ITO films for AlGaInN flip-chip LEDs.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1521, doi. 10.1134/S1063782609110219

By:

Markov, L. K.;
Smirnova, I. P.;
Pavlyuchenko, A. S.;
Arakcheeva, E. M.;
Kulagina, M. M.

Publication type:

Article

Structure and optical properties of SiN x: H films with Si nanoclusters produced by low-frequency plasma-enhanced chemical vapor deposition.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1514, doi. 10.1134/S1063782609110207

By:

Korchagina, T. T.;
Marin, D. V.;
Volodin, V. A.;
Popov, A. A.;
Vergnat, M.

Publication type:

Article

Electrical properties of layered FeGaInS4 single crystals with an alternating current.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1407, doi. 10.1134/S1063782609110025

By:

Niftiev, N. N.;
Tagiev, O. B.;
Muradov, M. B.;
Mamedov, F. M.

Publication type:

Article

The nature of acceptor levels in the band gap of unannealed samples of PbTe single crystals.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1416, doi. 10.1134/S1063782609110049

By:

Ahmedova, G. A.;
Bagiyeva, G. Z.;
Agauev, A. F.;
Abdinov, J. Sh.

Publication type:

Article

Hopping conductivity in polycrystalline photoconductive Pb3O4 layers.

Published in:

Semiconductors, 2009, v. 43, n. 11, p. 1496, doi. 10.1134/S1063782609110165

By:

Avanesyan, V. T.;
Potachev, S. A.;
Baranova, E. P.

Publication type:

Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 11

Influence of the dielectric phase on the photoluminescence spectrum of fractally structured nanocomposite lead selenide films.

Growth of ZnO nanocrystals by pulsed laser deposition on sapphire and silicon and the infrared spectra of the nanocrystals.

Growing FeIn<sub>2</sub>S<sub>4</sub> single crystals and fabrication of photosensitive structures on their basis.

Photosensitive structures on single crystals of MnIn<sub>2</sub>S<sub>4</sub>: Preparation and properties.

Photoluminescence of CdSe nanoparticles in porous GaP.

Field diffusion and nonequilibrium electron transport in polymers.

Effect of uniaxial stress on intervalley phonon-assisted relaxation of excited shallow-donor states in silicon.

Structure and kinetics of crystallization of thin amorphous films of Yb<sub>1− x</sub>Sm<sub> x</sub>As<sub>4</sub>S<sub>7</sub>.

Superconducting properties of silicon nanostructures.

Quantum supercurrent and Andreev reflection in silicon nanostructures.

Effect of the electric field on the intensity and spectrum of emission from InGaN/GaN quantum wells.

Optical and structural properties of thin films precipitated from the sol of silicon nanoparticles.

Photosemiconducting properties of holographic media based on ferrocenyl-containing cooligomers of glycidyl carbazole with these oligomers sensitized by organic dye.

Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source.

Interphase interactions and the mechanism of current flow in Au-TiB<sub> x</sub>-AuGe- n-GaP ohmic contacts.

Special features of the mechanism of defect formation in CdS single crystals subjected to irradiation with high doses of fast reactor neutrons.

Modification of the spectrum of electronic states in polycrystalline p-CdTe as a result of annealing in Cd vapors or natural aging.

Injection currents in amorphous alloys of the Se-S system.

Reflecting p-contact based on thin ITO films for AlGaInN flip-chip LEDs.

Structure and optical properties of SiN<sub> x</sub>: H films with Si nanoclusters produced by low-frequency plasma-enhanced chemical vapor deposition.

Electrical properties of layered FeGaInS<sub>4</sub> single crystals with an alternating current.

The nature of acceptor levels in the band gap of unannealed samples of PbTe single crystals.

Hopping conductivity in polycrystalline photoconductive Pb<sub>3</sub>O<sub>4</sub> layers.