Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 10

Results: 24

Generation of surface electromagnetic waves in semiconductors under the action of femtosecond laser pulses.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1298, doi. 10.1134/S106378260910008X

By:

Martsinovsky, G. A.;
Shandybina, G. D.;
Dement'eva, Yu. S.;
Dyukin, R. V.;
Zabotnov, S. V.;
Golovan', L. A.;
Kashkarov, P. K.

Publication type:

Article

Manifestation of the injection mechanism of efficiency droop in the temperature dependence of the external quantum efficiency of AlInGaN-based light-emitting diodes.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1351, doi. 10.1134/S1063782609100170

By:

Pavluchenko, A. S.;
Rozhansky, I. V.;
Zakheim, D. A.

Publication type:

Article

Properties of interfaces in GaInP solar cells.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1363, doi. 10.1134/S1063782609100194

By:

Gudovskikh, A. S.;
Kalyuzhnyy, N. A.;
Lantratov, V. M.;
Mintairov, S. A.;
Shvarts, M. Z.;
Andreev, V. M.

Publication type:

Article

Penetration (intercalation) of copper atoms under a graphene layer on iridium (111).

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1255, doi. 10.1134/S1063782609100017

By:

Rut'kov, E. V.;
Gall, N. R.

Publication type:

Article

Quenching of lasing in high power semiconductor laser.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1369, doi. 10.1134/S1063782609100200

By:

Slipchenko, S. O.;
Vinokurov, D. A.;
Lyutetskiy, A. V.;
Pikhtin, N. A.;
Stankevich, A. L.;
Fetisova, N. V.;
Bondarev, A. D.;
Tarasov, I. S.

Publication type:

Article

Conductivity of layers of a chalcogenide glassy semiconductor Ge2Sb2Te5 in high electric fields.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1343, doi. 10.1134/S1063782609100157

By:

Lebedev, É. A.;
Kozykhin, S. A.;
Konstantinova, N. N.;
Kazakova, L. P.

Publication type:

Article

Capacitance-voltage study of heterostructures with InGaAs/GaAs quantum wells in the temperature range from 10 to 320 K.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1328, doi. 10.1134/S1063782609100121

By:

Petrovskaya, A. N.;
Zubkov, V. I.

Publication type:

Article

Suppression of electron transitions between split energy levels in three-barrier structures by a varying space-charge field.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1316, doi. 10.1134/S1063782609100108

By:

Pashkovskii, A. B.

Publication type:

Article

Effect of temperature on luminance-current characteristics of the InGaN light-emitting diode’s structure.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1356, doi. 10.1134/S1063782609100182

By:

Grushko, N. S.;
Vostretsova, L. N.;
Ambrosevich, A. S.;
Kagarmanov, A. S.

Publication type:

Article

The crucial role of singlet oxygen in the formation of photoluminescence from nanoporous silicon.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1347, doi. 10.1134/S1063782609100169

By:

Belyakov, L. V.;
Vainshtein, Yu. S.;
Goryachev, D. N.;
Sreseli, O. M.

Publication type:

Article

Study of optical characteristics of structures with strongly strained In xGa1 − xAs quantum wells.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1334, doi. 10.1134/S1063782609100133

By:

Vinokurov, D. A.;
Kapitonov, V. A.;
Nikolaev, D. N.;
Sokolova, Z. N.;
Stankevich, A. L.;
Shamakhov, V. V.;
Tarasov, I. S.

Publication type:

Article

Effect of irradiation on the properties of nanocrystalline silicon carbide films.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1322, doi. 10.1134/S106378260910011X

By:

Semenov, A. V.;
Lopin, A. V.;
Puzikov, V. M.;
Boriskin, V. N.

Publication type:

Article

Effect of surface conduction in the semiconductor electrode on the distribution of the gas-discharge current.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1288, doi. 10.1134/S1063782609100066

By:

Orbukh, V. I.;
Lebedeva, N. N.;
Salamov, B. G.

Publication type:

Article

Effect of deep impurity on electric characteristics of epitaxial GaAs structures.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1292, doi. 10.1134/S1063782609100078

By:

Kalygina, V. M.;
Slyun'ko, E. S.

Publication type:

Article

Features of simultaneous diffusion of boron and gadolinium in silicon from nanoscale hybrid organic-inorganic films.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1394, doi. 10.1134/S1063782609100248

By:

Smirnova, I. V.;
Shilova, O. A.;
Moshnikov, V. A.;
Gamarts, A. E.

Publication type:

Article

Nonlinearity of current-voltage characteristics of chalcogenide glassy semiconductors, caused by multiphonon tunnel ionization of negative-U-centers.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1338, doi. 10.1134/S1063782609100145

By:

Bogoslowsky, N. A.;
Tsendin, K. D.

Publication type:

Article

Plane two-barrier resonance-tunneling structures: Resonance energies and resonance widths of quasi-stationary electron states.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1305, doi. 10.1134/S1063782609100091

By:

Tkach, N. V.;
Seti, Yu. A.

Publication type:

Article

The short-wavelength edge of intrinsic photoluminescence in diluted GaN xAs1 − x alloys.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1267, doi. 10.1134/S1063782609100030

By:

Gutkin, A. A;
Brunkov, P. N.;
Egorov, A. Yu.

Publication type:

Article

Growth and annealing of CdZnTe:Cl crystals with different content of Zn for nuclear detectors.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1379, doi. 10.1134/S1063782609100224

By:

Zelenina, N. K.;
Karpenko, V. P.;
Matveev, O. A.;
Sedov, V. E.;
Terentyev, A. I.;
Tomasov, A. A.

Publication type:

Article

Effect of silicon-surface orientation in the bulk model of thermal oxidation.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1373, doi. 10.1134/S1063782609100212

By:

Aleksandrov, O. V.;
Dusj, A. I.

Publication type:

Article

Fundamental absorption edge of semiconductor alloys with the direct-gap energy-band structure.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1259, doi. 10.1134/S1063782609100029

By:

Pikhtin, A. N.;
Hegazy, H. H.

Publication type:

Article

The level of local charge-neutrality and pinning of the Fermi level in irradiated nitrides wz-III-N (BN, AlN, GaN, InN).

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1271, doi. 10.1134/S1063782609100042

By:

Brudnyi, V. N.;
Kosobutsky, A. V.;
Kolin, N. G.

Publication type:

Article

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1387, doi. 10.1134/S1063782609100236

By:

Bert, N. A.;
Kolesnikova, A. L.;
Nevedomsky, V. N.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Romanov, A. E.;
Seleznev, V. M.;
Semyagin, B. R.;
Chaldyshev, V. V.

Publication type:

Article

Thermoelectric and other phenomena in structures with nonequilibrium charge carriers and nanoparticles.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1280, doi. 10.1134/S1063782609100054

By:

Stafeev, V. I.

Publication type:

Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 10

Generation of surface electromagnetic waves in semiconductors under the action of femtosecond laser pulses.

Manifestation of the injection mechanism of efficiency droop in the temperature dependence of the external quantum efficiency of AlInGaN-based light-emitting diodes.

Properties of interfaces in GaInP solar cells.

Penetration (intercalation) of copper atoms under a graphene layer on iridium (111).

Quenching of lasing in high power semiconductor laser.

Conductivity of layers of a chalcogenide glassy semiconductor Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> in high electric fields.

Capacitance-voltage study of heterostructures with InGaAs/GaAs quantum wells in the temperature range from 10 to 320 K.

Suppression of electron transitions between split energy levels in three-barrier structures by a varying space-charge field.

Effect of temperature on luminance-current characteristics of the InGaN light-emitting diode’s structure.

The crucial role of singlet oxygen in the formation of photoluminescence from nanoporous silicon.

Study of optical characteristics of structures with strongly strained In<sub> x</sub>Ga<sub>1 − x</sub>As quantum wells.

Effect of irradiation on the properties of nanocrystalline silicon carbide films.

Effect of surface conduction in the semiconductor electrode on the distribution of the gas-discharge current.

Effect of deep impurity on electric characteristics of epitaxial GaAs structures.

Features of simultaneous diffusion of boron and gadolinium in silicon from nanoscale hybrid organic-inorganic films.

Nonlinearity of current-voltage characteristics of chalcogenide glassy semiconductors, caused by multiphonon tunnel ionization of negative-U-centers.

Plane two-barrier resonance-tunneling structures: Resonance energies and resonance widths of quasi-stationary electron states.

The short-wavelength edge of intrinsic photoluminescence in diluted GaN<sub> x</sub>As<sub>1 − x</sub> alloys.

Growth and annealing of CdZnTe:Cl crystals with different content of Zn for nuclear detectors.

Effect of silicon-surface orientation in the bulk model of thermal oxidation.

Fundamental absorption edge of semiconductor alloys with the direct-gap energy-band structure.

The level of local charge-neutrality and pinning of the Fermi level in irradiated nitrides wz-III-N (BN, AlN, GaN, InN).

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs.

Thermoelectric and other phenomena in structures with nonequilibrium charge carriers and nanoparticles.