Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 9
Results: 26
Behavior of the phonon replicas of the acceptor-bound exciton’s recombination line in GaAs/AlGaAs quantum wells.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1174, doi. 10.1134/S1063782609090139
- By:
- Publication type:
- Article
Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1205, doi. 10.1134/S1063782609090188
- By:
- Publication type:
- Article
Eddy currents in the p–n junction in a microwave field.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1170, doi. 10.1134/S1063782609090127
- By:
- Publication type:
- Article
Experimental 4 H-SiC junction-barrier Schottky (JBS) diodes.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1209, doi. 10.1134/S106378260909019X
- By:
- Publication type:
- Article
Formation of phases in the films of a Ag-In-Se system.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1111, doi. 10.1134/S1063782609090012
- By:
- Publication type:
- Article
Photoelectric signatures of CdZnTe crystals.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1217, doi. 10.1134/S1063782609090218
- By:
- Publication type:
- Article
Local structure of germanium-sulfur, germanium-selenium, and germanium-tellurium vitreous alloys.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1193, doi. 10.1134/S1063782609090164
- By:
- Publication type:
- Article
The influence of the magnetic field on the effect of drag of electrons by phonons in n-Cd<sub> x</sub>Hg<sub>1 − x</sub>Te.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1142, doi. 10.1134/S1063782609090073
- By:
- Publication type:
- Article
Transport of electrons in a GaAs quantum well in high electric fields.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1177, doi. 10.1134/S1063782609090140
- By:
- Publication type:
- Article
Electronic properties and pinning of the Fermi level in irradiated II–IV–V<sub>2</sub> semiconductors.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1146, doi. 10.1134/S1063782609090085
- By:
- Publication type:
- Article
Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga<sub> x</sub>In<sub>1 − x</sub>P/GaAs(100) heterostructures.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1221, doi. 10.1134/S106378260909022X
- By:
- Publication type:
- Article
A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1213, doi. 10.1134/S1063782609090206
- By:
- Publication type:
- Article
Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1235, doi. 10.1134/S1063782609090243
- By:
- Publication type:
- Article
Integrated diagnostics of heterostructures with QW layers.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1240, doi. 10.1134/S1063782609090255
- By:
- Publication type:
- Article
Effect of the magnetic phase transition on the charge transport in layered semiconductor ferromagnets TlCrS<sub>2</sub> and TlCrSe<sub>2</sub>.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1134, doi. 10.1134/S106378260909005X
- By:
- Publication type:
- Article
Electrical properties of In<sub>2</sub>Se<sub>3</sub> single crystals and photosensitivity of Al/In<sub>2</sub>Se<sub>3</sub> Schottky barriers.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1138, doi. 10.1134/S1063782609090061
- By:
- Publication type:
- Article
Flow of the current along metallic shunts in ohmic contacts to wide-gap III–V semiconductors.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1164, doi. 10.1134/S1063782609090115
- By:
- Publication type:
- Article
Nonlinear effects during the growth of semiconductor nanowires.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1226, doi. 10.1134/S1063782609090231
- By:
- Publication type:
- Article
Electron spectrum and scattering of charge carriers in PbTe:(Na + Te).
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1155, doi. 10.1134/S1063782609090097
- By:
- Publication type:
- Article
Features of the mechanisms of generation and “Healing” of structural defects in the heavily doped intermetallic semiconductor n-ZrNiSn.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1115, doi. 10.1134/S1063782609090024
- By:
- Publication type:
- Article
The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1124, doi. 10.1134/S1063782609090036
- By:
- Publication type:
- Article
The simplest electron-hole complexes localized at longitudinal fluctuations in quantum wires.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1182, doi. 10.1134/S1063782609090152
- By:
- Publication type:
- Article
Optimization of structural perfection of 4 H-polytype silicon carbide ingots.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1248, doi. 10.1134/S1063782609090267
- By:
- Publication type:
- Article
Effect of a high electric field on the conductivity of MnGa<sub>2</sub>S<sub>4</sub>, MnIn<sub>2</sub>S<sub>4</sub>, and MnGaInS<sub>4</sub> single crystals.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1131, doi. 10.1134/S1063782609090048
- By:
- Publication type:
- Article
Photoluminescence of silicon after deposition of polycrystalline diamond films.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1159, doi. 10.1134/S1063782609090103
- By:
- Publication type:
- Article
Mechanisms of formation of N–S transition in nonisothermal I–V characteristics of a p–i–n diode.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1198, doi. 10.1134/S1063782609090176
- By:
- Publication type:
- Article