Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 9

Results: 26

Eddy currents in the p–n junction in a microwave field.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1170, doi. 10.1134/S1063782609090127

By:

Shamirzaev, S. H.;
Gulyamov, G.;
Dadamirzaev, M. G.;
Gulyamov, A. G.

Publication type:

Article

Experimental 4 H-SiC junction-barrier Schottky (JBS) diodes.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1209, doi. 10.1134/S106378260909019X

By:

Ivanov, P. A.;
Grekhov, I. V.;
Potapov, A. S.;
Il'inskaya, N. D.;
Samsonova, T. P.;
Kon'kov, O. I.

Publication type:

Article

Behavior of the phonon replicas of the acceptor-bound exciton’s recombination line in GaAs/AlGaAs quantum wells.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1174, doi. 10.1134/S1063782609090139

By:

Petrov, P. V.;
Ivanov, Yu. L.;
Averkiev, N. S.

Publication type:

Article

Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1205, doi. 10.1134/S1063782609090188

By:

Verkhovtseva, A. V.;
Gergel, V. A.

Publication type:

Article

Transport of electrons in a GaAs quantum well in high electric fields.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1177, doi. 10.1134/S1063782609090140

By:

Požela, J.;
Požela, K.;
Raguotis, R.;
Juciené, V.

Publication type:

Article

Formation of phases in the films of a Ag-In-Se system.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1111, doi. 10.1134/S1063782609090012

By:

Ismayilov, D. I.;
Kerimova, N. K.

Publication type:

Article

Photoelectric signatures of CdZnTe crystals.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1217, doi. 10.1134/S1063782609090218

By:

But, A. V.;
Migal', V. P.;
Fomin, A. S.

Publication type:

Article

Local structure of germanium-sulfur, germanium-selenium, and germanium-tellurium vitreous alloys.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1193, doi. 10.1134/S1063782609090164

By:

Bordovsky, G. A.;
Terukov, E. I.;
Anisimova, N. I.;
Marchenko, A. V.;
Seregin, P. P.

Publication type:

Article

Effect of the magnetic phase transition on the charge transport in layered semiconductor ferromagnets TlCrS2 and TlCrSe2.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1134, doi. 10.1134/S106378260909005X

By:

Veliyev, R. G.;
Sadikhov, R. Z.;
Kerimova, E. M.;
Asadov, Yu. G.;
Jabbarov, A. I.

Publication type:

Article

A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1213, doi. 10.1134/S1063782609090206

By:

Vinokurov, D. A.;
Ladugin, M. A.;
Marmalyuk, A. A.;
Padalitsa, A. A.;
Pikhtin, N. A.;
Simakov, V. A.;
Sukharev, A. V.;
Fetisova, N. V.;
Shamakhov, V. V.;
Tarasov, I. S.

Publication type:

Article

Electrical properties of In2Se3 single crystals and photosensitivity of Al/In2Se3 Schottky barriers.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1138, doi. 10.1134/S1063782609090061

By:

Bodnar, I. V.;
Ilchuk, G. A.;
Petrus', R. Yu.;
Rud', V. Yu.;
Rud', Yu. V.;
Serginov, M.

Publication type:

Article

The influence of the magnetic field on the effect of drag of electrons by phonons in n-Cd xHg1 − xTe.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1142, doi. 10.1134/S1063782609090073

By:

Aliyev, S. A.;
Zulfigarov, E. I.;
Selim-Zade, R. I.;
Agayev, Z. F.

Publication type:

Article

Electron spectrum and scattering of charge carriers in PbTe:(Na + Te).

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1155, doi. 10.1134/S1063782609090097

By:

Prokofieva, L. V.;
Pshenay-Severin, D. A.;
Konstantinov, P. P.;
Shabaldin, A. A.

Publication type:

Article

Electronic properties and pinning of the Fermi level in irradiated II–IV–V2 semiconductors.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1146, doi. 10.1134/S1063782609090085

By:

Brudnyi, V. N.

Publication type:

Article

Integrated diagnostics of heterostructures with QW layers.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1240, doi. 10.1134/S1063782609090255

By:

Konnikov, S. G.;
Gutkin, A. A.;
Zamoryanskaya, M. V.;
Popova, T. B.;
Sitnikova, A. A.;
Shakhmin, A. A.;
Yagovkina, M. A.

Publication type:

Article

Flow of the current along metallic shunts in ohmic contacts to wide-gap III–V semiconductors.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1164, doi. 10.1134/S1063782609090115

By:

Blank, T. V.;
Goldberg, Yu. A.;
Posse, E. A.

Publication type:

Article

Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga xIn1 − xP/GaAs(100) heterostructures.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1221, doi. 10.1134/S106378260909022X

By:

Seredin, P. V.;
Domashevskaya, E. P.;
Rudneva, Val. E.;
Rudneva, V. E.;
Gordienko, N. N.;
Glotov, A. V.;
Arsentyev, I. N.;
Vinokurov, D. A.;
Stankevich, A. L.;
Tarasov, I. S.

Publication type:

Article

The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1124, doi. 10.1134/S1063782609090036

By:

Romaka, V. A.;
Stadnyk, Yu. V.;
Fruchart, D.;
Dominuk, T. I.;
Romaka, L. P.;
Rogl, P.;
Goryn, A. M.

Publication type:

Article

The simplest electron-hole complexes localized at longitudinal fluctuations in quantum wires.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1182, doi. 10.1134/S1063782609090152

By:

Semina, M. A.;
Sergeev, R. A.;
Suris, R. A.

Publication type:

Article

Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1235, doi. 10.1134/S1063782609090243

By:

Putuato, M. A.;
Bolkhovityanov, Yu. B.;
Vasilenko, A. P.;
Gutakovskii, A. K.

Publication type:

Article

Nonlinear effects during the growth of semiconductor nanowires.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1226, doi. 10.1134/S1063782609090231

By:

Dubrovskii, V. G.;
Sibirev, N. V.;
Timofeeva, M. A.

Publication type:

Article

Features of the mechanisms of generation and “Healing” of structural defects in the heavily doped intermetallic semiconductor n-ZrNiSn.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1115, doi. 10.1134/S1063782609090024

By:

Romaka, V. A.;
Hlil, E. K.;
Skolozdra, Ya. V.;
Rogl, P.;
Stadnyk, Yu. V.;
Romaka5, L. P.;
Goryn, A. M.

Publication type:

Article

Optimization of structural perfection of 4 H-polytype silicon carbide ingots.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1248, doi. 10.1134/S1063782609090267

By:

Avrov, D. D.;
Dorozhkin, S. I.;
Lebedev, A. O.;
Tairov, Yu. M.;
Tregubova, A. S.;
Fadeev, A. Yu.

Publication type:

Article

Photoluminescence of silicon after deposition of polycrystalline diamond films.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1159, doi. 10.1134/S1063782609090103

By:

Aminev, D. F.;
Bagaev, V. S.;
Galkina, T. I.;
Klokov, A. Yu.;
Krivobok, V. S.;
Ralchenko, V. G.;
Savel'ev, A. V.

Publication type:

Article

Effect of a high electric field on the conductivity of MnGa2S4, MnIn2S4, and MnGaInS4 single crystals.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1131, doi. 10.1134/S1063782609090048

By:

Niftiev, N. N.;
Tagiev, O. B.

Publication type:

Article

Mechanisms of formation of N–S transition in nonisothermal I–V characteristics of a p–i–n diode.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1198, doi. 10.1134/S1063782609090176

By:

Gorbatyuk, A. V.;
Serkov, F. B.

Publication type:

Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 9

Eddy currents in the p–n junction in a microwave field.

Experimental 4 H-SiC junction-barrier Schottky (JBS) diodes.

Behavior of the phonon replicas of the acceptor-bound exciton’s recombination line in GaAs/AlGaAs quantum wells.

Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes.

Transport of electrons in a GaAs quantum well in high electric fields.

Formation of phases in the films of a Ag-In-Se system.

Photoelectric signatures of CdZnTe crystals.

Local structure of germanium-sulfur, germanium-selenium, and germanium-tellurium vitreous alloys.

Effect of the magnetic phase transition on the charge transport in layered semiconductor ferromagnets TlCrS<sub>2</sub> and TlCrSe<sub>2</sub>.

A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD.

Electrical properties of In<sub>2</sub>Se<sub>3</sub> single crystals and photosensitivity of Al/In<sub>2</sub>Se<sub>3</sub> Schottky barriers.

The influence of the magnetic field on the effect of drag of electrons by phonons in n-Cd<sub> x</sub>Hg<sub>1 − x</sub>Te.

Electron spectrum and scattering of charge carriers in PbTe:(Na + Te).

Electronic properties and pinning of the Fermi level in irradiated II–IV–V<sub>2</sub> semiconductors.

Integrated diagnostics of heterostructures with QW layers.

Flow of the current along metallic shunts in ohmic contacts to wide-gap III–V semiconductors.

Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga<sub> x</sub>In<sub>1 − x</sub>P/GaAs(100) heterostructures.

The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity.

The simplest electron-hole complexes localized at longitudinal fluctuations in quantum wires.

Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen.

Nonlinear effects during the growth of semiconductor nanowires.

Features of the mechanisms of generation and “Healing” of structural defects in the heavily doped intermetallic semiconductor n-ZrNiSn.

Optimization of structural perfection of 4 H-polytype silicon carbide ingots.

Photoluminescence of silicon after deposition of polycrystalline diamond films.

Effect of a high electric field on the conductivity of MnGa<sub>2</sub>S<sub>4</sub>, MnIn<sub>2</sub>S<sub>4</sub>, and MnGaInS<sub>4</sub> single crystals.

Mechanisms of formation of N–S transition in nonisothermal I–V characteristics of a p–i–n diode.