Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 8

Results: 25

Fast pulsed gallium arsenide heterostructure diodes.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1055, doi. 10.1134/S106378260908017X

By:

Danil'chenko, V. G.;
Korol'kov, V. I.;
Soldatenkov, F. Yu.

Publication type:

Article

The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1098, doi. 10.1134/S1063782609080247

By:

Seredin, P. V.;
Gordienko, N. N.;
Glotov, A. V.;
Zhurbina, I. A.;
Domashevskaya, E. P.;
Arsent'ev, I. N.;
Shishkov, M. V.

Publication type:

Article

Optimum composition of a Bi2Te3 − x Se x alloy for the n-type leg of a thermoelectric generator.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 973, doi. 10.1134/S1063782609080016

By:

Prokofieva, L. V.;
Pshenay-Severin, D. A.;
Konstantinov, P. P.;
Shabaldin, A. A.

Publication type:

Article

Photoelectric properties of a sandwich structure composed of films synthesized under highly nonequilibrium conditions.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 993, doi. 10.1134/S1063782609080053

By:

Belyaev, A. P.;
Rubets, V. P.;
Toshkhodzhaev, Kh. A.

Publication type:

Article

The temperature dependence of the thermopower of the InSb Corbino disc in a quantizing magnetic field.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 995, doi. 10.1134/S1063782609080065

By:

Gadjialiev, M. M.;
Pirmagomedov, Z. Sh.

Publication type:

Article

Dependence of the efficiency of a CdS/CdTe solar cell on the absorbing layer’s thickness.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1023, doi. 10.1134/S1063782609080119

By:

Kosyachenko, L. A.;
Savchuk, A. I.;
Grushko, E. V.

Publication type:

Article

Flexible solar cells based on cadmium sulfide and telluride.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1046, doi. 10.1134/S1063782609080156

By:

Khrypunov, G. S.;
Chernykh, E. P.;
Kovtun, N. A.;
Belonogov, E. K.

Publication type:

Article

Effect of parameters of narrow-gap inclusions on the type and intensity of secondary-ion photoeffect in heterophase photosensitive semiconductors.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1064, doi. 10.1134/S1063782609080193

By:

Stetsyura, S. V.;
Malyar, I. V.;
Serdobintsev, A. A.;
Klimova, S. A.

Publication type:

Article

Charge transport in 4 H-SiC detector structures under conditions of a high electric field.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1052, doi. 10.1134/S1063782609080168

By:

Ivanov, A. M.;
Mynbaeva, M. G.;
Sadokhin, A. V.;
Strokan, N. B.;
Lebedev, A. A.

Publication type:

Article

Non-volatile memory based on silicon nanoclusters.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1040, doi. 10.1134/S1063782609080144

By:

Novikov, Yu. N.

Publication type:

Article

Thermoelectric figure of merit of Ag2Se with Ag and Se excess.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 977, doi. 10.1134/S1063782609080028

By:

Aliev, F. F.;
Jafarov, M. B.;
Eminova, V. I.

Publication type:

Article

Spin hall effect in semiconductor structures with spatially inhomogeneous spin relaxation.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1002, doi. 10.1134/S1063782609080089

By:

Gorbatyi, I. N.

Publication type:

Article

Fractal geometry of the surface potential in electrochemically deposited platinum and palladium films.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1071, doi. 10.1134/S106378260908020X

By:

Torkhov, N. A.;
Novikov, V. A.

Publication type:

Article

Dielectric waveguide for middle and far infrared radiation.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1036, doi. 10.1134/S1063782609080132

By:

Averkiev, N. S.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Tarasov, I. S.

Publication type:

Article

Luminescence in quantum-confined cadmium selenide nanocrystals and nanorods in external electric fields.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1008, doi. 10.1134/S1063782609080090

By:

Gurinovich, L. I.;
Lutich, A. A.;
Stupak, A. P.;
Prislopsky, S. Ya.;
Rusakov, E. K.;
Artemyev, M. V.;
Gaponenko, S. V.;
Demir, H. V.

Publication type:

Article

Spin-lattice relaxation of 113Cd and 19F nuclear spins in the crystal lattice of CdF2 semiconductor crystals with DX centers.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 985, doi. 10.1134/S1063782609080041

By:

Kazanskii, S. A.;
Warren, Jr., W. W.;
Ryskin, A. I.

Publication type:

Article

Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1102, doi. 10.1134/S1063782609080259

By:

Moiseev, K. D.;
Parkhomenko, Ya. A.;
Gushchina, E. V.;
Ankudinov, A. V.;
Mikhailova, V. P.;
Bert, N. A.;
Yakovlev, Yu. P.

Publication type:

Article

Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 980, doi. 10.1134/S106378260908003X

By:

Ermolovich, I. B.;
Milenin, V. V.;
Red'ko, R. A.;
Red'ko, S. M.

Publication type:

Article

Photoluminescence of ZnO infiltrated into a three-dimensional photonic crystal.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1017, doi. 10.1134/S1063782609080107

By:

Gruzintsev, A. N.;
Emelchenko, G. A.;
Masalov, V. M.

Publication type:

Article

Lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 997, doi. 10.1134/S1063782609080077

By:

Talochkin, A. B.;
Chistokhin, I. B.;
Markov, V. A.

Publication type:

Article

Cooperative effects in the case of pulsed self-heating of a p-i-n diode.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1028, doi. 10.1134/S1063782609080120

By:

Gorbatyuk, A. V.;
Serkov, F. B.

Publication type:

Article

Features of molecular beam epitaxy of the GaN (0001) and GaN (000 $$ \bar 1 $$ ) layers with the use of different methods of activation of nitrogen.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1058, doi. 10.1134/S1063782609080181

By:

Mizerov, A. M.;
Jmerik, V. N.;
Kaibyshev, V. K.;
Komissarova, T. A.;
Masalov, S. A.;
Ivanov, S. V.

Publication type:

Article

Properties of GaN(SiC)-(Ti, Zr)B x contacts subjected to rapid thermal annealing.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1086, doi. 10.1134/S1063782609080223

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Kladko, V. P.;
Kudryk, Ya. Ya.;
Lebedev, A. A.;
Milenin, V. V.;
Sheremet, V. N.

Publication type:

Article

Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1092, doi. 10.1134/S1063782609080235

By:

Usmonov, Sh. N.;
Saidov, A. S.;
Leyderman, A. Yu.;
Saparov, D.;
Kholikov, K. T.

Publication type:

Article

High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1078, doi. 10.1134/S1063782609080211

By:

Chaldyshev, V. V.;
Yagovkina, M. A.;
Baidakova, M. V.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 8

Fast pulsed gallium arsenide heterostructure diodes.

The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures.

Optimum composition of a Bi<sub>2</sub>Te<sub>3 − x </sub>Se<sub> x </sub> alloy for the n-type leg of a thermoelectric generator.

Photoelectric properties of a sandwich structure composed of films synthesized under highly nonequilibrium conditions.

The temperature dependence of the thermopower of the InSb Corbino disc in a quantizing magnetic field.

Dependence of the efficiency of a CdS/CdTe solar cell on the absorbing layer’s thickness.

Flexible solar cells based on cadmium sulfide and telluride.

Effect of parameters of narrow-gap inclusions on the type and intensity of secondary-ion photoeffect in heterophase photosensitive semiconductors.

Charge transport in 4 H-SiC detector structures under conditions of a high electric field.

Non-volatile memory based on silicon nanoclusters.

Thermoelectric figure of merit of Ag<sub>2</sub>Se with Ag and Se excess.

Spin hall effect in semiconductor structures with spatially inhomogeneous spin relaxation.

Fractal geometry of the surface potential in electrochemically deposited platinum and palladium films.

Dielectric waveguide for middle and far infrared radiation.

Luminescence in quantum-confined cadmium selenide nanocrystals and nanorods in external electric fields.

Spin-lattice relaxation of <sup>113</sup>Cd and <sup>19</sup>F nuclear spins in the crystal lattice of CdF<sub>2</sub> semiconductor crystals with DX centers.

Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate.

Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing.

Photoluminescence of ZnO infiltrated into a three-dimensional photonic crystal.

Lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots.

Cooperative effects in the case of pulsed self-heating of a p-i-n diode.

Features of molecular beam epitaxy of the GaN (0001) and GaN (000 $$ \bar 1 $$ ) layers with the use of different methods of activation of nitrogen.

Properties of GaN(SiC)-(Ti, Zr)B<sub> x </sub> contacts subjected to rapid thermal annealing.

Possibility of obtaining the (GaSb)<sub>1 − x </sub>(Si<sub>2</sub>)<sub> x </sub> films on silicon substrates by the method of liquid-phase epitaxy.

High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus.