Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 8

Results: 25

Fast pulsed gallium arsenide heterostructure diodes.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1055, doi. 10.1134/S106378260908017X
By:
- Danil'chenko, V. G.;
- Korol'kov, V. I.;
- Soldatenkov, F. Yu.
Publication type:
Article
The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1098, doi. 10.1134/S1063782609080247
By:
- Seredin, P. V.;
- Gordienko, N. N.;
- Glotov, A. V.;
- Zhurbina, I. A.;
- Domashevskaya, E. P.;
- Arsent'ev, I. N.;
- Shishkov, M. V.
Publication type:
Article
Optimum composition of a Bi2Te3 − x Se x alloy for the n-type leg of a thermoelectric generator.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 973, doi. 10.1134/S1063782609080016
By:
- Prokofieva, L. V.;
- Pshenay-Severin, D. A.;
- Konstantinov, P. P.;
- Shabaldin, A. A.
Publication type:
Article
Photoelectric properties of a sandwich structure composed of films synthesized under highly nonequilibrium conditions.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 993, doi. 10.1134/S1063782609080053
By:
- Belyaev, A. P.;
- Rubets, V. P.;
- Toshkhodzhaev, Kh. A.
Publication type:
Article
The temperature dependence of the thermopower of the InSb Corbino disc in a quantizing magnetic field.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 995, doi. 10.1134/S1063782609080065
By:
- Gadjialiev, M. M.;
- Pirmagomedov, Z. Sh.
Publication type:
Article
Dependence of the efficiency of a CdS/CdTe solar cell on the absorbing layer’s thickness.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1023, doi. 10.1134/S1063782609080119
By:
- Kosyachenko, L. A.;
- Savchuk, A. I.;
- Grushko, E. V.
Publication type:
Article
Flexible solar cells based on cadmium sulfide and telluride.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1046, doi. 10.1134/S1063782609080156
By:
- Khrypunov, G. S.;
- Chernykh, E. P.;
- Kovtun, N. A.;
- Belonogov, E. K.
Publication type:
Article
Effect of parameters of narrow-gap inclusions on the type and intensity of secondary-ion photoeffect in heterophase photosensitive semiconductors.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1064, doi. 10.1134/S1063782609080193
By:
- Stetsyura, S. V.;
- Malyar, I. V.;
- Serdobintsev, A. A.;
- Klimova, S. A.
Publication type:
Article
Charge transport in 4 H-SiC detector structures under conditions of a high electric field.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1052, doi. 10.1134/S1063782609080168
By:
- Ivanov, A. M.;
- Mynbaeva, M. G.;
- Sadokhin, A. V.;
- Strokan, N. B.;
- Lebedev, A. A.
Publication type:
Article
Non-volatile memory based on silicon nanoclusters.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1040, doi. 10.1134/S1063782609080144
By:
- Novikov, Yu. N.
Publication type:
Article
Thermoelectric figure of merit of Ag2Se with Ag and Se excess.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 977, doi. 10.1134/S1063782609080028
By:
- Aliev, F. F.;
- Jafarov, M. B.;
- Eminova, V. I.
Publication type:
Article
Spin hall effect in semiconductor structures with spatially inhomogeneous spin relaxation.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1002, doi. 10.1134/S1063782609080089
By:
- Gorbatyi, I. N.
Publication type:
Article
Fractal geometry of the surface potential in electrochemically deposited platinum and palladium films.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1071, doi. 10.1134/S106378260908020X
By:
- Torkhov, N. A.;
- Novikov, V. A.
Publication type:
Article
Dielectric waveguide for middle and far infrared radiation.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1036, doi. 10.1134/S1063782609080132
By:
- Averkiev, N. S.;
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Tarasov, I. S.
Publication type:
Article
Luminescence in quantum-confined cadmium selenide nanocrystals and nanorods in external electric fields.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1008, doi. 10.1134/S1063782609080090
By:
- Gurinovich, L. I.;
- Lutich, A. A.;
- Stupak, A. P.;
- Prislopsky, S. Ya.;
- Rusakov, E. K.;
- Artemyev, M. V.;
- Gaponenko, S. V.;
- Demir, H. V.
Publication type:
Article
Spin-lattice relaxation of 113Cd and 19F nuclear spins in the crystal lattice of CdF2 semiconductor crystals with DX centers.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 985, doi. 10.1134/S1063782609080041
By:
- Kazanskii, S. A.;
- Warren, Jr., W. W.;
- Ryskin, A. I.
Publication type:
Article
Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1102, doi. 10.1134/S1063782609080259
By:
- Moiseev, K. D.;
- Parkhomenko, Ya. A.;
- Gushchina, E. V.;
- Ankudinov, A. V.;
- Mikhailova, V. P.;
- Bert, N. A.;
- Yakovlev, Yu. P.
Publication type:
Article
Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 980, doi. 10.1134/S106378260908003X
By:
- Ermolovich, I. B.;
- Milenin, V. V.;
- Red'ko, R. A.;
- Red'ko, S. M.
Publication type:
Article
Photoluminescence of ZnO infiltrated into a three-dimensional photonic crystal.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1017, doi. 10.1134/S1063782609080107
By:
- Gruzintsev, A. N.;
- Emelchenko, G. A.;
- Masalov, V. M.
Publication type:
Article
Lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 997, doi. 10.1134/S1063782609080077
By:
- Talochkin, A. B.;
- Chistokhin, I. B.;
- Markov, V. A.
Publication type:
Article
Cooperative effects in the case of pulsed self-heating of a p-i-n diode.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1028, doi. 10.1134/S1063782609080120
By:
- Gorbatyuk, A. V.;
- Serkov, F. B.
Publication type:
Article
Features of molecular beam epitaxy of the GaN (0001) and GaN (000 $$ \bar 1 $$ ) layers with the use of different methods of activation of nitrogen.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1058, doi. 10.1134/S1063782609080181
By:
- Mizerov, A. M.;
- Jmerik, V. N.;
- Kaibyshev, V. K.;
- Komissarova, T. A.;
- Masalov, S. A.;
- Ivanov, S. V.
Publication type:
Article
Properties of GaN(SiC)-(Ti, Zr)B x contacts subjected to rapid thermal annealing.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1086, doi. 10.1134/S1063782609080223
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Ivanov, V. N.;
- Konakova, R. V.;
- Kladko, V. P.;
- Kudryk, Ya. Ya.;
- Lebedev, A. A.;
- Milenin, V. V.;
- Sheremet, V. N.
Publication type:
Article
Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1092, doi. 10.1134/S1063782609080235
By:
- Usmonov, Sh. N.;
- Saidov, A. S.;
- Leyderman, A. Yu.;
- Saparov, D.;
- Kholikov, K. T.
Publication type:
Article
High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1078, doi. 10.1134/S1063782609080211
By:
- Chaldyshev, V. V.;
- Yagovkina, M. A.;
- Baidakova, M. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 8

Fast pulsed gallium arsenide heterostructure diodes.

The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures.

Optimum composition of a Bi<sub>2</sub>Te<sub>3 − x </sub>Se<sub> x </sub> alloy for the n-type leg of a thermoelectric generator.

Photoelectric properties of a sandwich structure composed of films synthesized under highly nonequilibrium conditions.

The temperature dependence of the thermopower of the InSb Corbino disc in a quantizing magnetic field.

Dependence of the efficiency of a CdS/CdTe solar cell on the absorbing layer’s thickness.

Flexible solar cells based on cadmium sulfide and telluride.

Effect of parameters of narrow-gap inclusions on the type and intensity of secondary-ion photoeffect in heterophase photosensitive semiconductors.

Charge transport in 4 H-SiC detector structures under conditions of a high electric field.

Non-volatile memory based on silicon nanoclusters.

Thermoelectric figure of merit of Ag<sub>2</sub>Se with Ag and Se excess.

Spin hall effect in semiconductor structures with spatially inhomogeneous spin relaxation.

Fractal geometry of the surface potential in electrochemically deposited platinum and palladium films.

Dielectric waveguide for middle and far infrared radiation.

Luminescence in quantum-confined cadmium selenide nanocrystals and nanorods in external electric fields.

Spin-lattice relaxation of <sup>113</sup>Cd and <sup>19</sup>F nuclear spins in the crystal lattice of CdF<sub>2</sub> semiconductor crystals with DX centers.

Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate.

Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing.

Photoluminescence of ZnO infiltrated into a three-dimensional photonic crystal.

Lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots.

Cooperative effects in the case of pulsed self-heating of a p-i-n diode.

Features of molecular beam epitaxy of the GaN (0001) and GaN (000 $$ \bar 1 $$ ) layers with the use of different methods of activation of nitrogen.

Properties of GaN(SiC)-(Ti, Zr)B<sub> x </sub> contacts subjected to rapid thermal annealing.

Possibility of obtaining the (GaSb)<sub>1 − x </sub>(Si<sub>2</sub>)<sub> x </sub> films on silicon substrates by the method of liquid-phase epitaxy.

High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus.