Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 7

Results: 28

Determination of the mechanisms of photovoltage generation in semiconductor films from spectral dependences of the absorption coefficient and photovoltage.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 892, doi. 10.1134/S1063782609070112

By:

Nabiyev, G. A.

Publication type:

Article

Mechanisms of anomalous photovoltage Effect in CdTe films.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 894, doi. 10.1134/S1063782609070124

By:

Nabiev, G. A.

Publication type:

Article

Operation of a semiconductor opening switch at the pumping time of a microsecond and low current density.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 953, doi. 10.1134/S1063782609070252

By:

Vasiliev, P. V.;
Lyubutin, S. K.;
Ponomarev, A. V.;
Rukin, S. N.;
Slovikovsky, B. G.;
Tsyranov, S. N.;
Cholakh, S. O.

Publication type:

Article

Simulation of interaction between nickel and silicon carbide during the formation of ohmic contacts.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 885, doi. 10.1134/S1063782609070100

By:

Aleksandrov, O. V.;
Kozlovski, V. V.

Publication type:

Article

Dynamics of local micro-breakdown in the Geiger mode of avalanche photodiodes.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 934, doi. 10.1134/S1063782609070215

By:

Verhovtseva, A. V.;
Gergel, V. A.

Publication type:

Article

IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 911, doi. 10.1134/S1063782609070161

By:

Kozyrev, S. P.

Publication type:

Article

Study of deep centers in microplasma channels of silicon epitaxial avalanche diodes.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 948, doi. 10.1134/S1063782609070240

By:

Ionychev, V. K.;
Rebrov, A. N.

Publication type:

Article

Simulation of the subnanosecond cutoff of current in high-power semiconductor diodes.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 957, doi. 10.1134/S1063782609070264

By:

Rukin, S. N.;
Tsyranov, S. N.

Publication type:

Article

Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 968, doi. 10.1134/S1063782609070288

By:

Sennikov, P. G.;
Golubev, S. V.;
Shashkin, V. I;
Pryakhin, D. A.;
Drozdov, M. N.;
Andreev, B. A.;
Drozdov, Yu. N.;
Kuznetsov, A. S.;
Pohl, H. -J.

Publication type:

Article

Optical study of platinum-modified amorphous carbon.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 915, doi. 10.1134/S1063782609070173

By:

Remenyuk, A. D.;
Zvonareva, T. K.;
Zaharova, I. B.;
Tolmachev, V. A.;
Belyakov, L. V.;
Perova, T. S.

Publication type:

Article

Spin-orbit interaction of charge carriers with impurities in aligned Ge0.99Me0.01 (Me = Mn, Cr, Co, Fe) nanowires.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 896, doi. 10.1134/S1063782609070136

By:

Morgunov, R. B.;
Dmitriev, A. I.;
Mushenok, F. B.;
Kazakova, O. L.

Publication type:

Article

Solid-state image converters on the basis of the GaAs/ZnS structures.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 943, doi. 10.1134/S1063782609070239

By:

Kalygina, V. M.;
Tyazhev, A. V.;
Yaskevich, T. M.

Publication type:

Article

Optically active centers in Si/Si1 − xGe x:Er heterostructures containing Er3+ ions.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 877, doi. 10.1134/S1063782609070094

By:

Krasilnikova, L. V.;
Strepikhova, M. V.;
Baidakova, N. A.;
Drozdov, Yu. N.;
Krasilnik, Z. F.;
Chalkov, V. Yu.;
Shengurov, V. G.

Publication type:

Article

Sensitized anti-stokes luminescence centers in AgCl crystals.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 852, doi. 10.1134/S1063782609070057

By:

Smirnov, M. S.;
Ovchinnikov, O. V.;
Latyshev, A. N.;
Smirnova, A. M.;
Novikov, P. V.;
Efimova, M. A.

Publication type:

Article

Au-TiB x- n-6 H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 865, doi. 10.1134/S1063782609070070

By:

Ageev, O. A.;
Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, P. M.;
Milenin, V. V.;
Sachenko, A. V.

Publication type:

Article

Properties of GaAsN nanowires grown by magnetron-sputtering deposition.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 906, doi. 10.1134/S106378260907015X

By:

Soshnikov, I. P.;
Cirlin, G. E.;
Nadtochii, A. M.;
Dubrovskii, V. G.;
Bukin, M. A.;
Petrov, V. A.;
Busov, V. M.;
Troshkov, S. I.

Publication type:

Article

Effect of ethanol on optical and electrical parameters of porous silicon.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 925, doi. 10.1134/S1063782609070197

By:

Bolotov, V. V.;
Sten’kin, Yu. A.;
Roslikov, V. E.;
Kang, V. E.;
Ponomareva, I. V.;
Nesov, S. N.

Publication type:

Article

Radiation effects in multilayer ohmic contacts Au-Ti-Al-Ti- n-GaN.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 872, doi. 10.1134/S1063782609070082

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Kapitanchuk, L. M.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, O. S.;
Milenin, V. V.;
Sheremet, V. N.;
Sveshnikov, Yu. N.

Publication type:

Article

Electron spin resonance and photoluminescence in pyrolytic silicon nitride films irradiated with argon and molecular ions.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 929, doi. 10.1134/S1063782609070203

By:

Demidov, E. S.;
Dobychin, N. A.;
Karzanov, V. V.;
Marychev, M. O.;
Sdobnyakov, V. V.

Publication type:

Article

Effect of the spectrum of elementary excitations on spinodal decomposition of semiconductor alloys.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 841, doi. 10.1134/S1063782609070033

By:

Maslov, A. Yu.;
Proshina, O. V.

Publication type:

Article

Anisotropy of the relaxation of the electron spin caused by competition of the Rashba and Dresselhaus mechanisms.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 901, doi. 10.1134/S1063782609070148

By:

Smirnova, A. M.;
Oseptsovaa, V. A.;
Platonova, A. V.;
Gurevicha, A. S.;
Kochereshkoa, V. P.;
Shkolnika, A. S.;
Evtikhieva, V. P.;
Petrovb, V. V.;
Dolgikhb, Yu. K.;
Efimovb, Yu. P.;
Eliseevb, S. A.

Publication type:

Article

Photosensitive structures based on ZnP2 single crystals of monoclinic and tetragonal modifications: Fabrication and properties.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 858, doi. 10.1134/S1063782609070069

By:

Rud, V. Yu.;
Rud, Yu. V.;
Vaipolin, A. A.;
Bodnar, I. V.;
Osipiva, M. A.;
Ushakova, T. N.

Publication type:

Article

Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 963, doi. 10.1134/S1063782609070276

By:

Lundin, W. V.;
Sakharov, A. V.;
Zavarin, E. E.;
Sinitsyn, M. A.;
Nikolaev, A. E.;
Mikhailovsky, G. A.;
Brunkov, P. N.;
Goncharov, V. V.;
Ber, B. Ya.;
Kazantsev, D. Yu.;
Tsatsulnikov, A. F.

Publication type:

Article

Adsorption of sodium atoms on the (111) germanium surface.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 833, doi. 10.1134/S106378260907001X

By:

Davydov, S. Yu.

Publication type:

Article

Effect of self-compensation on the electron lifetime in gallium-doped cadmium telluride.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 846, doi. 10.1134/S1063782609070045

By:

Rabenok, E.V.;
Galanovich, M. V.;
Novikov, G. F.;
Odin, I. N.

Publication type:

Article

Electrical conductivity of amorphous films of chalcogenide compounds in high electric fields.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 921, doi. 10.1134/S1063782609070185

By:

Voronkov, E. N.;
Kozyukhin, S. A.

Publication type:

Article

Establishment of specific features of electron localization at U− centers in semiconductors from thermally stimulated currents.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 837, doi. 10.1134/S1063782609070021

By:

Nikitina, A. G.;
Zuev, V. V.

Publication type:

Article

High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 939, doi. 10.1134/S1063782609070227

By:

Jung-Hui Tsai;
Shao-Yen Chiu;
Wen-Shiung Lour;
Der-Feng Guo

Publication type:

Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 7

Determination of the mechanisms of photovoltage generation in semiconductor films from spectral dependences of the absorption coefficient and photovoltage.

Mechanisms of anomalous photovoltage Effect in CdTe films.

Operation of a semiconductor opening switch at the pumping time of a microsecond and low current density.

Simulation of interaction between nickel and silicon carbide during the formation of ohmic contacts.

Dynamics of local micro-breakdown in the Geiger mode of avalanche photodiodes.

IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers.

Study of deep centers in microplasma channels of silicon epitaxial avalanche diodes.

Simulation of the subnanosecond cutoff of current in high-power semiconductor diodes.

Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride.

Optical study of platinum-modified amorphous carbon.

Spin-orbit interaction of charge carriers with impurities in aligned Ge<sub>0.99</sub>Me<sub>0.01</sub> (Me = Mn, Cr, Co, Fe) nanowires.

Solid-state image converters on the basis of the GaAs/ZnS structures.

Optically active centers in Si/Si<sub>1 − x</sub>Ge<sub> x</sub>:Er heterostructures containing Er<sup>3+</sup> ions.

Sensitized anti-stokes luminescence centers in AgCl crystals.

Au-TiB<sub> x</sub>- n-6 H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts.

Properties of GaAsN nanowires grown by magnetron-sputtering deposition.

Effect of ethanol on optical and electrical parameters of porous silicon.

Radiation effects in multilayer ohmic contacts Au-Ti-Al-Ti- n-GaN.

Electron spin resonance and photoluminescence in pyrolytic silicon nitride films irradiated with argon and molecular ions.

Effect of the spectrum of elementary excitations on spinodal decomposition of semiconductor alloys.

Anisotropy of the relaxation of the electron spin caused by competition of the Rashba and Dresselhaus mechanisms.

Photosensitive structures based on ZnP<sub>2</sub> single crystals of monoclinic and tetragonal modifications: Fabrication and properties.

Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers.

Adsorption of sodium atoms on the (111) germanium surface.

Effect of self-compensation on the electron lifetime in gallium-doped cadmium telluride.

Electrical conductivity of amorphous films of chalcogenide compounds in high electric fields.

Establishment of specific features of electron localization at U<sup>−</sup> centers in semiconductors from thermally stimulated currents.

High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor.