Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 6

Results: 27

Distribution of electric fields in ZnS:Mn single crystals during electroluminescence.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 716, doi. 10.1134/S1063782609060050

By:

Bulanuy, M. F.;
Kovalenko, A. V.;
Polezaev, B. A.;
Prokof'yev, T. A.

Publication type:

Article

Ways and peculiarities of submillimeter wavelength detection with short-channel field-effect transistors.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 787, doi. 10.1134/S1063782609060190

By:

Orlov, M. L.;
Panin, A. N.;
Orlov, L. K.

Publication type:

Article

Specific features of electronic and vibrational properties of I-V-V2 crystals.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 735, doi. 10.1134/S1063782609060098

By:

Basalaev, Yu. M.;
Kosobutsky, A. V.;
Poplavnoi, A. S.

Publication type:

Article

Application of the theory of transient processes in high-resistivity semiconductors to the determination of properties of the cold Universe.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 740, doi. 10.1134/S1063782609060104

By:

Fouks, B. I.

Publication type:

Article

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 812, doi. 10.1134/S1063782609060232

By:

Sakharov, A. V.;
Lundin, W. V.;
Zavarin, E. E.;
Sinitsyn, M. A.;
Nikolaev, A. E.;
Usov, S. O.;
Sizov, V. S.;
Mikhailovsky, G. A.;
Cherkashin, N. A.;
Hytch, M.;
Hue, F.;
Yakovlev, E. V.;
Lobanova, A. V.;
Tsatsulnikov, A. F.

Publication type:

Article

Spontaneous detachment of a sublimation-Grown AlN layer from a SiC-6 H substrate.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 818, doi. 10.1134/S1063782609060244

By:

Wolfson, A. A.

Publication type:

Article

Thin-film polycrystalline n-ZnO/ p-CuO heterojunction.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 765, doi. 10.1134/S1063782609060153

By:

Lisitski, O. L.;
Kumekov, M. E.;
Kumekov, S. E.;
Terukov, E. I.

Publication type:

Article

Relaxation of optically stimulated resistance of thin SnO2 films.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 782, doi. 10.1134/S1063782609060189

By:

Russkih, D. V.;
Rembeza, S. I.

Publication type:

Article

Study of the 3 C-SiC layers grown on the 15 R-SiC substrates.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 756, doi. 10.1134/S106378260906013X

By:

Lebedev, A. A.;
Abramov, P. L.;
Bogdanova, E. V.;
Zubrilov, A. S.;
Lebedev, S. P.;
Nelson, D. K.;
Seredova, N. V.;
Smirnov, A. N.;
Tregubova, A. S.

Publication type:

Article

Heat- and radiation-resistant contacts to SiC made on the basis of quasi-amorphous ZrB2 films.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 726, doi. 10.1134/S1063782609060074

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Kapitanchuk, L. M.;
Konakova, R. F.;
Kudryk, Ya. Ya.;
Milenin, V. V.

Publication type:

Article

Structure of cadmium selen-telluride alloy films grown by the thermal-screen method under highly nonequilibrium conditions.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 706, doi. 10.1134/S1063782609060037

By:

Belyaev, A. P.;
Rubets, V. P.;
Antipov, V. V.;
Toshkhodzhaev, Kh. A.

Publication type:

Article

The quantum solution of the accumulation layer problem of n-InN.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 760, doi. 10.1134/S1063782609060141

By:

Klochikhin, A. A.;
Strashkova, I. Yu.

Publication type:

Article

Effect of conjugation with biomolecules on photoluminescence and structural characteristics of CdSe/ZnS quantum dots.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 775, doi. 10.1134/S1063782609060177

By:

Borkovska, L. V.;
Korsunska, N. E.;
Kryshtab, T. G.;
Germash, L. P.;
Pecherska, E. Yu.;
Ostapenko, S.;
Chornokur, G.

Publication type:

Article

Effective photoelectric converters of ultraviolet radiation with graded-gap ZnS-based layers.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 801, doi. 10.1134/S1063782609060219

By:

Bobrenko, Yu. N.;
Pavelets, S. Yu.;
Pavelets, A. M.

Publication type:

Article

Low-temperature plasma pulsed deposition of thin films with nanoscale periodicity of properties.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 828, doi. 10.1134/S106378260906027X

By:

Serdobintsev, A. A.;
Veselov, A. G.;
Kiryasova, O. A.;
Portnov, S. A.;
Bratashov, D. N.

Publication type:

Article

Density of displacement cascades for cluster ions: An algorithm of calculation and the influence on damage formation in ZnO and GaN.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 691, doi. 10.1134/S1063782609060013

By:

Karaseov, P. A.;
Azarov, A. Yu.;
Titov, A. I.;
Kucheyev, S. O.

Publication type:

Article

Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 807, doi. 10.1134/S1063782609060220

By:

Sizov, V. S.;
Gutkin, A. A.;
Sakharov, A. V.;
Lundin, V. V.;
Brunkov, P. N.;
Tsatsul'nikov, A. F.

Publication type:

Article

Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 710, doi. 10.1134/S1063782609060049

By:

Astrov, Yu. A.;
Kozlov, V. A.;
Lodygin, A. N.;
Portsel, L. M.;
Shuman, V. B.;
Gurevich, E. L.;
Hergenröder, R.

Publication type:

Article

Effect of carbon monoxide on the capacitance-voltage characteristics of Pd-SiO2-Si MOS diodes.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 751, doi. 10.1134/S1063782609060128

By:

Kalygina, V. M.;
Gricyk, V. Ju.

Publication type:

Article

The influence of the energy of photoexcitation in the course of electron irradiation on defect formation in n-Si crystals.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 721, doi. 10.1134/S1063782609060062

By:

Pagava, T. A.;
Maisuradze, N. I.

Publication type:

Article

Phase transformations in II–V semiconductors under high pressure.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 701, doi. 10.1134/S1063782609060025

By:

Mollaev, A. Yu.;
Saypulaeva, L. A.;
Alibekov, A. G.;
Marenkin, S. F.;
Babushkin, A. N.

Publication type:

Article

Intersegment resistance in silicon p— n-Junction position-sensitive detectors.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 796, doi. 10.1134/S1063782609060207

By:

Eremin, V. K.;
Verbitskaya, E. M.;
Ilyashenko, I. N.;
Eremin, I. V.;
Safonova, N. N.;
Tuboltsev, Yu. V.;
Egorov, N. N.;
Golubkov, S. A.;
Konkov, K. A.

Publication type:

Article

Scanning tunneling microscopy of the Si-SiO2 structure: the use of feedback fault conditions in surface studies.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 820, doi. 10.1134/S1063782609060256

By:

Kornilov, V. M.;
Lachinov, A. N.;
Loginov, B. A.;
Bespalov, V. A.

Publication type:

Article

Relation between currents and charges measured in samples during diagnostics of inhomogeneous insulating films.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 823, doi. 10.1134/S1063782609060268

By:

Dmitriev, S. G.

Publication type:

Article

Nonradiative recombination in GaN quantum dots formed in the AlN matrix.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 768, doi. 10.1134/S1063782609060165

By:

Aleksandrov, I. A.;
Zhuravlev, K. S.;
Mansurov, V. G.

Publication type:

Article

Effect of chlorine impurities on the long-wavelength absorption edge of CdTe single crystals.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 730, doi. 10.1134/S1063782609060086

By:

Popovych, V. D.;
Potera, P.;
Virt, I. S.;
Bilyk, M. F.

Publication type:

Article

The variation in activity of recombination centers in silicon p- n structures under the conditions of acoustic loading.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 745, doi. 10.1134/S1063782609060116

By:

Olikh, O. Ya.

Publication type:

Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 6

Distribution of electric fields in ZnS:Mn single crystals during electroluminescence.

Ways and peculiarities of submillimeter wavelength detection with short-channel field-effect transistors.

Specific features of electronic and vibrational properties of I-V-V<sub>2</sub> crystals.

Application of the theory of transient processes in high-resistivity semiconductors to the determination of properties of the cold Universe.

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.

Spontaneous detachment of a sublimation-Grown AlN layer from a SiC-6 H substrate.

Thin-film polycrystalline n-ZnO/ p-CuO heterojunction.

Relaxation of optically stimulated resistance of thin SnO<sub>2</sub> films.

Study of the 3 C-SiC layers grown on the 15 R-SiC substrates.

Heat- and radiation-resistant contacts to SiC made on the basis of quasi-amorphous ZrB<sub>2</sub> films.

Structure of cadmium selen-telluride alloy films grown by the thermal-screen method under highly nonequilibrium conditions.

The quantum solution of the accumulation layer problem of n-InN.

Effect of conjugation with biomolecules on photoluminescence and structural characteristics of CdSe/ZnS quantum dots.

Effective photoelectric converters of ultraviolet radiation with graded-gap ZnS-based layers.

Low-temperature plasma pulsed deposition of thin films with nanoscale periodicity of properties.

Density of displacement cascades for cluster ions: An algorithm of calculation and the influence on damage formation in ZnO and GaN.

Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix.

Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus.

Effect of carbon monoxide on the capacitance-voltage characteristics of Pd-SiO<sub>2</sub>-Si MOS diodes.

The influence of the energy of photoexcitation in the course of electron irradiation on defect formation in n-Si crystals.

Phase transformations in II–V semiconductors under high pressure.

Intersegment resistance in silicon p— n-Junction position-sensitive detectors.

Scanning tunneling microscopy of the Si-SiO<sub>2</sub> structure: the use of feedback fault conditions in surface studies.

Relation between currents and charges measured in samples during diagnostics of inhomogeneous insulating films.

Nonradiative recombination in GaN quantum dots formed in the AlN matrix.

Effect of chlorine impurities on the long-wavelength absorption edge of CdTe single crystals.

The variation in activity of recombination centers in silicon p- n structures under the conditions of acoustic loading.