Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 5

Results: 27

Persistent photoconductivity in MgZnO alloys.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 577, doi. 10.1134/S1063782609050054

By:

Polyakov, A. Y.;
Smirnov, N. B.;
Govorkov, A. V.;
Kozhukhova, E. A.;
Kim, H. S.;
Norton, D. P.;
Pearton, S. J.;
Belogorokhov, A. I.

Publication type:

Article

Redistribution of Al in implanted SiC layers as a result of thermal annealing.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 557, doi. 10.1134/S1063782609050029

By:

Aleksandrov, O. V.;
Kalinina, E. V.

Publication type:

Article

Mechanisms of negative resistivity and generation of terahertz radiation in a short-channel In0.53Ga0.47As/In0.52Al0.48As transistor.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 652, doi. 10.1134/S1063782609050212

By:

Orlov, M. L.;
Orlov, L. K.

Publication type:

Article

Optical and paramagnetic properties of synthetic diamond crystals irradiated with electrons and annealed.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 568, doi. 10.1134/S1063782609050042

By:

Poklonski, N. A.;
Gusakov, G. A.;
Bayev, V. G.;
Lapchuk, N. M.

Publication type:

Article

Photoconductivity of organic polymer films doped with porous silicon nanoparticles and ionic polymethine dyes.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 640, doi. 10.1134/S1063782609050194

By:

Davidenko, N. A.;
Skrichevsky, V. A.;
Ishchenko, A. A.;
Karlash, A. Yu.;
Mokrinskaya, E. V.

Publication type:

Article

Emission distribution in GaInAsSb/GaSb flip-chip diodes.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 662, doi. 10.1134/S1063782609050224

By:

Zakgeim, A. L.;
Il'inskaya, N. D.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyi, M. A.;
Cherniakov, A. E.;
Shlenskii, A. A.

Publication type:

Article

Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K).

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 680, doi. 10.1134/S1063782609050261

By:

Karachinsky, L. Ya.;
Novikov, I. I.;
Shernyakov, Yu. M.;
Gordeev, N. Yu.;
Payusov, A. S.;
Maximov, M. V.;
Mikhrin, S. S.;
Lifshits, M. B.;
Shchukin, V. A.;
Kop'ev, P. S.;
Ledentsov, N. N.;
Bimberg, D.

Publication type:

Article

Light-emitting diodes of “Warm” white luminescence on the basis of p- n heterostructures of the InGaN/AlGaN/GaN type coated with phosphors made of yttrium-gadolinium garnets.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 672, doi. 10.1134/S1063782609050248

By:

Soshchin, N. P.;
Galchina, N. A.;
Kogan, L. M.;
Shirokov, S. S.;
Yunovich, A. E.

Publication type:

Article

Thermoelectric properties of symmetric and asymmetric double quantum well structures.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 624, doi. 10.1134/S1063782609050169

By:

Sur, I. V.

Publication type:

Article

Electronic structure of Zn-substituted germanium clathrates.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 563, doi. 10.1134/S1063782609050030

By:

Borshch, N. A.;
Pereslavtseva, N. S.;
Kurganskii, S. I.

Publication type:

Article

Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4 H-SiC.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 612, doi. 10.1134/S1063782609050145

By:

Potapov, A. S.;
Ivanov, P. A.;
Samsonova, T. P.

Publication type:

Article

Mechanism of forward current transport in modified-surface Au-CdTe photodiodes.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 602, doi. 10.1134/S106378260905011X

By:

Makhnij, V. P.;
Bojko, Yu. N.;
Skrypnyk, N. V.

Publication type:

Article

Width of the excitonic absorption line in Al xGa1 − xas alloys.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 629, doi. 10.1134/S1063782609050170

By:

Markosov, M. S.;
Seisyan, R. P.

Publication type:

Article

Laplace-DLTS method with the regularization parameter chosen from the L curve.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 586, doi. 10.1134/S1063782609050078

By:

Levin, M. N.;
Tatarintzev, A. V.;
Akhkubekov, A. E.

Publication type:

Article

High-frequency conductivity of a thin cylindrical semiconductor wire at arbitrary temperatures.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 617, doi. 10.1134/S1063782609050157

By:

Kuznetsova, I. A.;
Yushkanov, A. A.;
Khadchukaev, R. R.

Publication type:

Article

Low-temperature production of silicon carbide films of different polytypes.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 685, doi. 10.1134/S1063782609050273

By:

Semenov, A. V.;
Puzikov, V. M.;
Golubova, E. P.;
Baumer, V. N.;
Dobrotvorskaya, M. V.

Publication type:

Article

Anomalous spin splitting of electrons in type-II InSb quantum dots in InAs.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 635, doi. 10.1134/S1063782609050182

By:

Terent'ev, Ya. V.;
Lyublinskaya, O. G.;
Toropov, A. A.;
Meltser, B. Ya.;
Semenov, A. N.;
Solov'ev, V. A.;
Ivanov, S. V.

Publication type:

Article

Photocurrent spectra in parametrical form and their discrete wavelet decomposition for CdZnTe alloys.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 581, doi. 10.1134/S1063782609050066

By:

But, A. V.;
Mygal, V. P.;
Phomin, A. S.

Publication type:

Article

Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 644, doi. 10.1134/S1063782609050200

By:

Andreev, V. M.;
Evstropov, V. V.;
Kalinovsky, V. S.;
Lantratov, V. M.;
Khvostikov, V. P.

Publication type:

Article

Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 677, doi. 10.1134/S106378260905025X

By:

Zhdan, A. G.;
Naryshkina, V. G.;
Chucheva, G. V.

Publication type:

Article

Dislocation electrical conductivity of synthetic diamond films.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 594, doi. 10.1134/S1063782609050091

By:

Samsonenko, S. N.;
Samsonenko, N. D.

Publication type:

Article

Nonlinear thermopower in bipolar semiconductor samples.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 604, doi. 10.1134/S1063782609050121

By:

Konin, A.

Publication type:

Article

Structure and properties of Cd xHg1− xTe-metal contacts.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 608, doi. 10.1134/S1063782609050133

By:

Stafeev, V. I.

Publication type:

Article

Fractal character of the distribution of surface potential irregularities in epitaxial n-GaAs (100).

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 551, doi. 10.1134/S1063782609050017

By:

Torkhov, N. A.;
Bozhkov, V. G.

Publication type:

Article

Optical properties of the Si-doped GaN/Al2O3 films.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 590, doi. 10.1134/S106378260905008X

By:

Zayats, N. S.;
Gentsar, P. O.;
Boiko, V. G.;
Litvin, O. S.;
Vuychik, M. V.;
Stronski, A. V.;
Yanchuk, I. B.

Publication type:

Article

Solar cells based on gallium antimonide.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 668, doi. 10.1134/S1063782609050236

By:

Andreev, V. M.;
Sorokina, S. V.;
Timoshina, N. Kh.;
Khvostikov, V. P.;
Shvarts, M. Z.

Publication type:

Article

Specific features of solid-phase recrystallization of silicon-on-sapphire structures amorphized by oxygen ions.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 599, doi. 10.1134/S1063782609050108

By:

Aleksandrov, P. A.;
Demakov, K. D.;
Shemardov, S. G.;
Kuznetsov, Yu. Yu.

Publication type:

Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 5

Persistent photoconductivity in MgZnO alloys.

Redistribution of Al in implanted SiC layers as a result of thermal annealing.

Mechanisms of negative resistivity and generation of terahertz radiation in a short-channel In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As transistor.

Optical and paramagnetic properties of synthetic diamond crystals irradiated with electrons and annealed.

Photoconductivity of organic polymer films doped with porous silicon nanoparticles and ionic polymethine dyes.

Emission distribution in GaInAsSb/GaSb flip-chip diodes.

Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K).

Light-emitting diodes of “Warm” white luminescence on the basis of p- n heterostructures of the InGaN/AlGaN/GaN type coated with phosphors made of yttrium-gadolinium garnets.

Thermoelectric properties of symmetric and asymmetric double quantum well structures.

Electronic structure of Zn-substituted germanium clathrates.

Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4 H-SiC.

Mechanism of forward current transport in modified-surface Au-CdTe photodiodes.

Width of the excitonic absorption line in Al<sub> x</sub>Ga<sub>1 − x</sub>as alloys.

Laplace-DLTS method with the regularization parameter chosen from the L curve.

High-frequency conductivity of a thin cylindrical semiconductor wire at arbitrary temperatures.

Low-temperature production of silicon carbide films of different polytypes.

Anomalous spin splitting of electrons in type-II InSb quantum dots in InAs.

Photocurrent spectra in parametrical form and their discrete wavelet decomposition for CdZnTe alloys.

Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions.

Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide.

Dislocation electrical conductivity of synthetic diamond films.

Nonlinear thermopower in bipolar semiconductor samples.

Structure and properties of Cd<sub> x</sub>Hg<sub>1− x</sub>Te-metal contacts.

Fractal character of the distribution of surface potential irregularities in epitaxial n-GaAs (100).

Optical properties of the Si-doped GaN/Al<sub>2</sub>O<sub>3</sub> films.

Solar cells based on gallium antimonide.

Specific features of solid-phase recrystallization of silicon-on-sapphire structures amorphized by oxygen ions.