Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 4

Results: 26

Depth profiling of semiconductor structures by X-ray microanalysis using the electron probe energy variation technique.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 544, doi. 10.1134/S1063782609040265

By:

Bakaleinikov, L. A.;
Domrachova, Ya. V.;
Kolesnikova, E. V.;
Zamoryanskaya, M. V.;
Popova, T. B.;
Flegontova, E. Yu.

Publication type:

Article

Resonance enhancement of spin-polarized electron emission.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 463, doi. 10.1134/S1063782609040101

By:

Gerchikov, L. G.;
Mamaev, Yu. A.;
Yashin, Yu. P.;
Vasiliev, D. A.;
Kuz'michev, V. V.;
Ustinov, V. M.;
Zhukov, A. E.;
Vasiliev, A. P.;
Mikhrin, V. S.

Publication type:

Article

Photoelectrochemical cells based on In2S3 single crystals.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 425, doi. 10.1134/S1063782609040046

By:

Rud', V. Yu.;
Rud', Yu. V.;
Bodnar, I. V.;
Ushakova, T. N.

Publication type:

Article

The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 524, doi. 10.1134/S1063782609040228

By:

Rabinovich, O. I.;
Sushkov, V. P.

Publication type:

Article

Electrical properties of Zinc-Tin diarsenide (ZnSnAs2) irradiated with H+ ions.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 413, doi. 10.1134/S1063782609040010

By:

Brudnyi, V. N.;
Vedernikova, T. V.

Publication type:

Article

Drift velocity of electrons in quantum wells in high electric fields.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 458, doi. 10.1134/S1063782609040095

By:

Mokerov, V. G.;
Vasil'evskii, I. S.;
Galiev, G. B.;
Požela, J.;
Po&žela, K.;
Sužiedųlis, A.;
Jucienų, V.;
Paškevič, Č.

Publication type:

Article

High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 519, doi. 10.1134/S1063782609040216

By:

Andreev, A. Yu.;
Zorina, S. A.;
Leshko, A. Yu.;
Lyutetskiy, A. V.;
Marmalyuk, A. A.;
Murashova, A. V.;
Nalet, T. A.;
Padalitsa, A. A.;
Pikhtin, N. A.;
Sabitov, D. R.;
Simakov, V. A.;
Slipchenko, S. O.;
Telegin, K. Yu.;
Shamakhov, V. V.;
Tarasov, I. S.

Publication type:

Article

I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx(CdS) x.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 416, doi. 10.1134/S1063782609040022

By:

Saidov, A. S.;
Leyderman, A. Yu.;
Usmonov, Sh. N.;
Kholikov, K. T.

Publication type:

Article

Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 490, doi. 10.1134/S1063782609040150

By:

Sobolev, M. M.;
Gadzhiyev, I. M.;
Bakshaev, I. O.;
Mikhrin, V. S.;
Nevedomskiy, V. N.;
Buyalo, M. S.;
Zadiranov, Yu. M.;
Portnoi, E. L.

Publication type:

Article

Current dependence of capacitance of germanium p+- p junctions in the temperature range of 290–330 K.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 436, doi. 10.1134/S106378260904006X

By:

Shekhovtsov, N. A.

Publication type:

Article

Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 528, doi. 10.1134/S106378260904023X

By:

Antonov, A. V.;
Gavrilenko, V. I.;
Maremyanin, K. V.;
Morozov, S. V.;
Teppe, F.;
Knap, W.

Publication type:

Article

Effect of piezoelectric fields of ultrasonic vibrations on raman scattering in GaAs/AlGaAs heterostructures.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 429, doi. 10.1134/S1063782609040058

By:

Kurylyuk, V. V.;
Korotchenkov, O. A.

Publication type:

Article

Thermoelectric power in carbon nanotubes.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 480, doi. 10.1134/S1063782609040137

By:

Mavrinskiy, A. V.;
Baitinger, E. M.

Publication type:

Article

Features of conductivity and photoconductivity of polymer composites containing heteropolynuclear M(II)/Cr(III) complexes.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 485, doi. 10.1134/S1063782609040149

By:

Davidenko, N. A.;
Dekhtyarenko, S. V.;
Kokozay, V. N.;
Kozinetz, A. V.;
Semenaka, V. V.;
Skryshevsky, V. A.;
Tretyak, O. V.

Publication type:

Article

Tunneling recombination in semiconductor structures with nanoscale disorder.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 440, doi. 10.1134/S1063782609040071

By:

Bulyarski, S. V.;
Rud', Yu. V.;
Vostretsova, L. N.;
Kagarmanov, A. S.;
Trifonov, O. A.

Publication type:

Article

Absolute negative resistance and multivaluedness on current-voltage characteristics of tunnel diodes.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 495, doi. 10.1134/S1063782609040162

By:

Aliev, K. M.;
Kamilov, I. K.;
Ibragimov, Kh. O.;
Abakarova, N. S.

Publication type:

Article

Optical and structural characteristics of Ga-doped ZnO films.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 419, doi. 10.1134/S1063782609040034

By:

Novodvorsky, O. A.;
Gorbatenko, L. S.;
Panchenko, V. Ya.;
Khramova, O. D.;
Cherebilo, Ye. A.;
Wenzel, C.;
Bartha, J. T.;
Bublik, V. T.;
Shcherbachev, K. D.

Publication type:

Article

GaInAsP/GaInP/AlGaInP MOCVD-grown diode lasers emitting at 808 nm.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 532, doi. 10.1134/S1063782609040241

By:

Aluev, A. V.;
Leshko, A. Yu.;
Lyutetskiy, A. V.;
Pikhtin, N. A.;
Slipchenko, S. O.;
Fetisova, N. V.;
Chelny, A. A.;
Shamakhov, V. V.;
Simakov, V. A.;
Tarasov, I. S.

Publication type:

Article

Effect of the number of pairs of the layers on the quality of the superlattices of the In xGa1 − xAs/GaAs/.../GaAs(001) type grown by molecular beam epitaxy under computer control.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 472, doi. 10.1134/S1063782609040125

By:

Kuznetsov, G. F.

Publication type:

Article

Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In xGa1 − x N/GaN quantum wells.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 447, doi. 10.1134/S1063782609040083

By:

Mezdrogina, M. M.;
Krivolapchuk, V. V.;
Petrov, V. N.;
Kozhanova, Yu. V.;
Danilovski, E. Yu.;
Kuz'min, R. V.

Publication type:

Article

The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 500, doi. 10.1134/S1063782609040174

By:

Kabanov, V. V.;
Lebiadok, E. V.;
Ryabtsev, A. G.;
Ryabtsev, G. I.;
Schemelev, M. A.;
Sherstnev, V. V.;
Astakhova, A. P.;
Yakovlev, Yu. P.

Publication type:

Article

Array of InGaAsSb light-emitting diodes (λ = 3.7 μm).

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 508, doi. 10.1134/S1063782609040198

By:

Zakheim, A. L.;
Zotova, N. V.;
Il'inskaya, N. D.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyi, M. A.;
Stus', N. M.;
Usikova, A. A.;
Chernyakov, A. E.

Publication type:

Article

AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 514, doi. 10.1134/S1063782609040204

By:

Blokhin, S. A.;
Sakharov, A. V.;
Nadtochy, A. M.;
Pauysov, A. S.;
Maximov, M. V.;
Ledentsov, N. N.;
Kovsh, A.R.;
Mikhrin, S. S.;
Lantratov, V. M.;
Mintairov, S. A.;
Kaluzhniy, N. A.;
Shvarts, M. Z.

Publication type:

Article

Visualization of localized photon modes of ZnO nanorods by scanning cathodoluminescence.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 468, doi. 10.1134/S1063782609040113

By:

Gruzintsev, A. N.;
Emelchenko, G. A.;
Redkin, A. N.;
Volkov, W. T.;
Yakimov, E. E.;
Visimberga, G.;
Romanov, S. G.

Publication type:

Article

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency fmax as high as 100 GHz.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 537, doi. 10.1134/S1063782609040253

By:

Mokerov, V. G.;
Kuznetsov, A. L.;
Fedorov, Yu. V.;
Bugaev, A. S.;
Pavlov, A. Yu.;
Enyushkina, E. N.;
Gnatyuk, D. L.;
Zuev, A. V.;
Galiev, R. R.;
Ovcharenko, E. N.;
Sveshnikov, Yu. N.;
Tsatsulnikov, A. F.;
Ustinov, V. M.

Publication type:

Article

High-voltage (1800 V) planar 4 H-SiC p-n junctions with floating guard rings.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 505, doi. 10.1134/S1063782609040186

By:

Ivanov, P. A.;
Grekhov, I. V.;
Il'inskaya, N. D.;
Samsonova, T. P.;
Potapov, A. S.

Publication type:

Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 4

Depth profiling of semiconductor structures by X-ray microanalysis using the electron probe energy variation technique.

Resonance enhancement of spin-polarized electron emission.

Photoelectrochemical cells based on In<sub>2</sub>S<sub>3</sub> single crystals.

The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes.

Electrical properties of Zinc-Tin diarsenide (ZnSnAs<sub>2</sub>) irradiated with H<sup>+</sup> ions.

Drift velocity of electrons in quantum wells in high electric fields.

High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement.

I–V characteristic of p-n structures based on a continuous solid solutions (Si<sub>2</sub>)<sub>1 − xx</sub>(CdS)<sub> x</sub>.

Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature.

Current dependence of capacitance of germanium p<sup>+</sup>- p junctions in the temperature range of 290–330 K.

Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas.

Effect of piezoelectric fields of ultrasonic vibrations on raman scattering in GaAs/AlGaAs heterostructures.

Thermoelectric power in carbon nanotubes.

Features of conductivity and photoconductivity of polymer composites containing heteropolynuclear M(II)/Cr(III) complexes.

Tunneling recombination in semiconductor structures with nanoscale disorder.

Absolute negative resistance and multivaluedness on current-voltage characteristics of tunnel diodes.

Optical and structural characteristics of Ga-doped ZnO films.

GaInAsP/GaInP/AlGaInP MOCVD-grown diode lasers emitting at 808 nm.

Effect of the number of pairs of the layers on the quality of the superlattices of the In<sub> x</sub>Ga<sub>1 − x</sub>As/GaAs/.../GaAs(001) type grown by molecular beam epitaxy under computer control.

Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In<sub> x</sub>Ga<sub>1 − x</sub> N/GaN quantum wells.

The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP.

Array of InGaAsSb light-emitting diodes (λ = 3.7 μm).

AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs.

Visualization of localized photon modes of ZnO nanorods by scanning cathodoluminescence.

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f<sub>max</sub> as high as 100 GHz.

High-voltage (1800 V) planar 4 H-SiC p-n junctions with floating guard rings.