Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 3

Results: 28

Yurii Viktorovich Gorelkinskii (1939–2008).
Published in:
2009
Publication type:
Obituary
Effect of the duration of the growth process on the properties of GaN grown by the sublimation method.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 400, doi. 10.1134/S1063782609030269
By:
- Wolfson, A. A.;
- Mokhov, E. N.
Publication type:
Article
Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 403, doi. 10.1134/S1063782609030270
By:
- Bobrovnikova, I. A.;
- Ivonin, I. V.;
- Novikov, V. A.;
- Preobrazhenskii, V. V.
Publication type:
Article
Room-temperature broadband InAsSb flip-chip photodiodes with λcut off = 4.5 μm.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 394, doi. 10.1134/S1063782609030257
By:
- Zakhgeim, A. L.;
- Zotova, N. V.;
- Il'inskaya, N. D.;
- Karandashev, S. A.;
- Matveev, B. A.;
- Remennyi, M. A.;
- Stus', N. M.;
- Chernyakov, A. E.
Publication type:
Article
Effect of pump wave reflections on the excitation of a dual-wavelength vertical-cavity surface-emitting laser.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 382, doi. 10.1134/S1063782609030233
By:
- Morozov, M. Yu.;
- Morozov, Yu. A.;
- Popov, V. V.
Publication type:
Article
Photoelectrochemical cells based on ternary compounds CuIn2 n + 1Se3 n + 2 ( n = 3–6).
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 374, doi. 10.1134/S106378260903021X
By:
- Rud, V. Yu.;
- Rud, Yu. V.;
- Bodnar, I. V.;
- Gorbachev, D. V.;
- Ushakova, T. N.
Publication type:
Article
Infrared spectroscopy of lattice vibrations in ZnTe/CdTe superlattices with quantum dots on the GaAs substrate with the ZnTe buffer layer.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 323, doi. 10.1134/S1063782609030129
By:
- Kozyrev, S. P.
Publication type:
Article
Optical transmittance spectra of insulator nanoparticles in bulk heterocomposites.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 331, doi. 10.1134/S1063782609030130
By:
- Kulchin, J. N.;
- Dzyuba, V. P.;
- Shcherbakov, A. V.
Publication type:
Article
The spectrum and properties of the scattering cross section of electrons in open spherical quantum dots.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 340, doi. 10.1134/S1063782609030142
By:
- Tkach, N. V.;
- Seti, Ju.
Publication type:
Article
Anti-stokes luminescence of Zn0.75Cd0.25S microcrystals annealed in the presence of oxygen.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 347, doi. 10.1134/S1063782609030154
By:
- Ovchinnikov, O. V.;
- Smirnov, M. S.;
- Kosyakova, E. A.;
- Latyshev, A. N.;
- Klyuev, V. G.;
- Evlev, A. B.;
- Utekhin, A. N.;
- Aseeva, D. V.
Publication type:
Article
Photostructural reconstructions of As-S and As-Se semiconductor glasses.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 352, doi. 10.1134/S1063782609030166
By:
- Bordovsky, G. A.;
- Nemov, S. A.;
- Anisimova, N. I.;
- Dzemidko, I. A.;
- Marchenko, A. V.;
- Seregin, P. P.
Publication type:
Article
Simulation of degradation of the profile of nanoporous silicon in the course of annealing in an inhomogeneous temperature field.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 355, doi. 10.1134/S1063782609030178
By:
- Kostishko, B. M.;
- Zolotov, A. V.;
- Nagornov, Yu. S.
Publication type:
Article
Photoelectric and electrical properties of soluble polyphenylquinolines containing an oxygen or phenylamine bridge group between quinoline moieties.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 359, doi. 10.1134/S106378260903018X
By:
- Aleksandrova, E. L.;
- Svetlychnyi, V. M.;
- Miagkova, L. A.;
- Nekrasova, T. N.;
- Tameev, A. R.;
- Vannikov, A. A.;
- Kudryavtsev, V. V.
Publication type:
Article
Spectra of charged defects in glassy Ge0.285Pb0.15S0.565 thin layers.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 365, doi. 10.1134/S1063782609030191
By:
- Castro, R. A.;
- Bordovsky, V. A.;
- Anisimov, N. I.;
- Grabko, G. I.
Publication type:
Article
Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 368, doi. 10.1134/S1063782609030208
By:
- Akopyan, A. A.;
- Bachronov, Kh. N.;
- Borkovskaya, O. Yu.;
- Dmitruk, N. L.;
- Yodgorova, D. M.;
- Karimov, A. V.;
- Konakova, R. V.;
- Mamontova, I. B.
Publication type:
Article
Wave front reversal by high-intensity pulsed optical excitation of ZnO.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 269, doi. 10.1134/S1063782609030014
By:
- Gruzintsev, A. N.
Publication type:
Article
Intracenter excited state of copper in Cu-compensated InP.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 275, doi. 10.1134/S1063782609030026
By:
- Melnik, V. A.;
- Pribylov, N. N.;
- Rembeza, S. I.;
- Makarenko, Ph. V.
Publication type:
Article
Features of structural, electron-transport, and magnetic properties of heavily doped n-ZrNiSn semiconductor: Fe acceptor impurity.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 278, doi. 10.1134/S1063782609030038
By:
- Romaka, V. A.;
- Stadnyk, Yu. V.;
- Fruchart, D.;
- Romaka, L. P.;
- Goryn, A. M.;
- Gorelenko, Yu. K.;
- Dominuk, T. I.
Publication type:
Article
Electrical and optical properties of InN with periodic metallic in insertions.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 285, doi. 10.1134/S106378260903004X
By:
- Komissarova, T. A.;
- Shubina, T. V.;
- Jmerik, V. N.;
- Ivanov, S. V.;
- Ryabova, L. I.;
- Khokhlov, D. R.;
- Vasson, A.;
- Leymarie, J.;
- Araki, T.;
- Nanishi, Y.
Publication type:
Article
Energy distribution of nonequilibrium electrons and optical phonons in GaAs under band-to-band pumping by intense short pulses of light.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 289, doi. 10.1134/S1063782609030051
By:
- Altybaev, G. S.;
- Kumekov, S. E.;
- Mahmudov, A. A.
Publication type:
Article
Recombination processes in pyrolytic cadmium sulfide films.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 292, doi. 10.1134/S1063782609030063
By:
- Maiorova, T. L.;
- Klyuev, V. G.
Publication type:
Article
Ferromagnetism in diluted Pb1 − x − yGe xCr yTe magnetic semiconductors.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 297, doi. 10.1134/S1063782609030075
By:
- Skipetrov, E. P.;
- Mikheev, M. G.;
- Pakpour, F. A.;
- Skipetrova, L. A.;
- Pichugin, N. A.;
- Slyn'ko, E. I.;
- Slyn'ko, V. E.
Publication type:
Article
Features of the infrared reflection spectra of SmS semiconductor in the homogeneity range.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 305, doi. 10.1134/S1063782609030087
By:
- Ulashkevich, Yu. V.;
- Kaminski, V. V.;
- Golubkov, A. V.
Publication type:
Article
Anomalous relaxation of photoconductivity in silicon at high excitation levels.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 310, doi. 10.1134/S1063782609030099
By:
- Borodovskii, P. A.;
- Buldygin, A. F.;
- Golod, S. V.
Publication type:
Article
Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 313, doi. 10.1134/S1063782609030105
By:
- Lobanov, D. N.;
- Novikov, A. V.;
- Kudryavtsev, K. E.;
- Shengurov, D. V.;
- Drozdov, Yu. N.;
- Yablonskiy, A. N.;
- Shmagin, V. B.;
- Krasilnik, Z. F.;
- Zakharov, N. D.;
- Werner, P.
Publication type:
Article
Metal-insulator transition in n-3 C-SiC epitaxial films.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 318, doi. 10.1134/S1063782609030117
By:
- Lebedev, A. A.;
- Abramov, P. L.;
- Agrinskaya, N. V.;
- Kozub, V. I.;
- Kuznetsov, A. N.;
- Lebedev, S. P.;
- Oganesyan, G. A.;
- Tregubova, A. S.;
- Chernyaev, A. V.;
- Shamshur, D. V.;
- Skvortsova, M. O.
Publication type:
Article
Cd xHg1 − xTe-based photodetector with the spectral characteristic controlled by the voltage.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 379, doi. 10.1134/S1063782609030221
By:
- Ismailov, N. J.
Publication type:
Article
Dynamics of a multimode semiconductor laser with optical feedback.
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 387, doi. 10.1134/S1063782609030245
By:
- Koryukin, I. V.
Publication type:
Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 3

Yurii Viktorovich Gorelkinskii (1939–2008).

Effect of the duration of the growth process on the properties of GaN grown by the sublimation method.

Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride.

Room-temperature broadband InAsSb flip-chip photodiodes with λ<sub>cut off</sub> = 4.5 μm.

Effect of pump wave reflections on the excitation of a dual-wavelength vertical-cavity surface-emitting laser.

Photoelectrochemical cells based on ternary compounds CuIn<sub>2 n + 1</sub>Se<sub>3 n + 2</sub> ( n = 3–6).

Infrared spectroscopy of lattice vibrations in ZnTe/CdTe superlattices with quantum dots on the GaAs substrate with the ZnTe buffer layer.

Optical transmittance spectra of insulator nanoparticles in bulk heterocomposites.

The spectrum and properties of the scattering cross section of electrons in open spherical quantum dots.

Anti-stokes luminescence of Zn<sub>0.75</sub>Cd<sub>0.25</sub>S microcrystals annealed in the presence of oxygen.

Photostructural reconstructions of As-S and As-Se semiconductor glasses.

Simulation of degradation of the profile of nanoporous silicon in the course of annealing in an inhomogeneous temperature field.

Photoelectric and electrical properties of soluble polyphenylquinolines containing an oxygen or phenylamine bridge group between quinoline moieties.

Spectra of charged defects in glassy Ge<sub>0.285</sub>Pb<sub>0.15</sub>S<sub>0.565</sub> thin layers.

Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface.

Wave front reversal by high-intensity pulsed optical excitation of ZnO.

Intracenter excited state of copper in Cu-compensated InP.

Features of structural, electron-transport, and magnetic properties of heavily doped n-ZrNiSn semiconductor: Fe acceptor impurity.

Electrical and optical properties of InN with periodic metallic in insertions.

Energy distribution of nonequilibrium electrons and optical phonons in GaAs under band-to-band pumping by intense short pulses of light.

Recombination processes in pyrolytic cadmium sulfide films.

Ferromagnetism in diluted Pb<sub>1 − x − y</sub>Ge<sub> x</sub>Cr<sub> y</sub>Te magnetic semiconductors.

Features of the infrared reflection spectra of SmS semiconductor in the homogeneity range.

Anomalous relaxation of photoconductivity in silicon at high excitation levels.

Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature.

Metal-insulator transition in n-3 C-SiC epitaxial films.

Cd<sub> x</sub>Hg<sub>1 − x</sub>Te-based photodetector with the spectral characteristic controlled by the voltage.

Dynamics of a multimode semiconductor laser with optical feedback.