Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 2

Results: 27

Spinodal decomposition of ZnO-BeO alloys.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 135, doi. 10.1134/S1063782609020018

By:

Emeljanova, O.;
Strelchenko, S.;
Usacheva, M.

Publication type:

Article

Transport in GaAs/Al xGa1− xAs superlattices with narrow minibands: Effects of interminiband tunneling.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 228, doi. 10.1134/S1063782609020213

By:

Andronov, A.;
Dodin, E.;
Zinchenko, D.;
Nozdrin, Yu.

Publication type:

Article

As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 266, doi. 10.1134/S1063782609020274

By:

Boitsov, A.;
Bert, N.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Evolution of the photoresponse time of the GaAs/AlGaAs cyclotron resonance quantum Hall effect detector.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 223, doi. 10.1134/S1063782609020201

By:

Antonov, A.;
Gavrilenko, V.;
Kuritsyn, D.;
Morozov, S.;
Spirin, K.;
Kawaguchi, Y.;
Komiyama, S.

Publication type:

Article

Magnetic and electrical properties of layered magnets Tl(Cr,Mn,Co)Se2.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 152, doi. 10.1134/S1063782609020055

By:

Veliyev, R.;
Sadikhov, R.;
Kerimova, E.;
Asadov, Yu.;
Jabbarov, A.

Publication type:

Article

Effect of oxidation on the conductivity of nanocrystalline PbTe:In films in an alternating electric field.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 253, doi. 10.1134/S1063782609020249

By:

Dobrovolsky, A.;
Komissarova, T.;
Dashevsky, Z.;
Kassiyan, V.;
Akimov, B.;
Ryabova, L.;
Khokhlov, D.

Publication type:

Article

Nonlinear response of a double-well nanostructure with electron-electron interaction.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 257, doi. 10.1134/S1063782609020250

By:

Elesin, V.;
Kateev, I.;
Remnev, M.

Publication type:

Article

Simulation of solar cells with quantum wells and comparison with conventional solar cells.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 262, doi. 10.1134/S1063782609020262

By:

Sachenko, A.;
Sokolovsky, I.

Publication type:

Article

Transport in GaAs/Al xGa1− xAs superlattices with narrow forbidden minibands: Low-frequency negative differential conductivity and current oscillations.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 236, doi. 10.1134/S1063782609020225

By:

Andronov, A.;
Dodin, E.;
Zinchenko, D.;
Nozdrin, Yu.

Publication type:

Article

The least number of pairs of layers needed for observation of satellite-structured X-ray diffraction in superlattices. Measurements and calculations of elastic stresses in alternate layers of superlattices.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 245, doi. 10.1134/S1063782609020237

By:

Kuznetsov, G.

Publication type:

Article

Nonuniformity of electrical properties for the PbTe single crystals in the growth direction.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 139, doi. 10.1134/S106378260902002X

By:

Mustafayev, N.;
Bagiyeva, G.;
Ahmedova, G.;
Agayev, Z.;
Abdinov, D.

Publication type:

Article

The nature of “heavy” electrons in the p-HgTe zero-gap semiconductor.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 168, doi. 10.1134/S1063782609020092

By:

Daunov, M.;
Kamilov, I.;
Gabibov, S.

Publication type:

Article

Features of the band structure for semiconducting iron, ruthenium, and osmium monosilicides.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 142, doi. 10.1134/S1063782609020031

By:

Shaposhnikov, V.;
Migas, D.;
Borisenko, V.;
Dorozhkin, N.

Publication type:

Article

Growth of n-Si layers by molecular-beam epitaxy on the substrates heavily doped with boron.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 181, doi. 10.1134/S1063782609020110

By:

Shengurov, V.;
Chalkov, V.;
Shengurov, D.;
Denisov, S.

Publication type:

Article

Conductivity of ultradispersed SnO2 ceramic in strong electric fields.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 156, doi. 10.1134/S1063782609020067

By:

Vasiliev, R.;
Rumyantseva, M.;
Ryabova, L.;
Gaskov, A.

Publication type:

Article

Terbium photoluminescence in yttrium aluminum garnet xerogels.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 158, doi. 10.1134/S1063782609020079

By:

Maliarevich, G.;
Gaponenko, N.;
Mudryi, A.;
Drozdov, Yu.;
Stepikhova, M.;
Stepanova, E.

Publication type:

Article

Absorption, luminescence excitation, and infrared transmittance spectra of ZnS(O)-ZnSe(O) crystals in the context of the band anticrossing theory.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 162, doi. 10.1134/S1063782609020080

By:

Morozova, N.;
Mideros, D.;
Danilevich, N.

Publication type:

Article

Conductivity anisotropy in the doped Bi2Te3 single crystals.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 145, doi. 10.1134/S1063782609020043

By:

Abdullaev, N.;
Kakhramanov, S.;
Kerimova, T.;
Mustafayeva, K.;
Nemov, S.

Publication type:

Article

Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/ p-CdTe heterostructures.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 175, doi. 10.1134/S1063782609020109

By:

Muzafarova, S.;
Mirsagatov, S.;
Dzhamalov, F.

Publication type:

Article

Analysis of forward current-voltage characteristics of nonideal Ti/4 H-SiC Schottky barriers.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 185, doi. 10.1134/S1063782609020122

By:

Ivanov, P.;
Potapov, A.;
Samsonova, T.

Publication type:

Article

Effect of ferroelectric substrate on the conductivity of the semiconductor film.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 189, doi. 10.1134/S1063782609020134

By:

Panakhov, M.;
Agasiev, A.;
Sarmasov, S.

Publication type:

Article

Properties of heterojunction based on pentacene and perylene derivatives.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 192, doi. 10.1134/S1063782609020146

By:

Stakhira, P.;
Cherpak, V.;
Volynyuk, D.

Publication type:

Article

Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 197, doi. 10.1134/S1063782609020158

By:

Gruzintsev, A.;
Emelchenko, G.;
Masalov, V.;
Yakimov, E.;
Barthou, C.;
Maitre, A.

Publication type:

Article

Magnetoabsorption of the electromagnetic radiation by a two-dimensional electron gas with Rashba’s spin-orbit coupling in a heterojunction with a lateral superlattice.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 202, doi. 10.1134/S106378260902016X

By:

Perov, A.;
Solnyshkova, L.

Publication type:

Article

Difference-frequency generation in a butt-join diode laser.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 208, doi. 10.1134/S1063782609020171

By:

Zvonkov, B.;
Biryukov, A.;
Nekorkin, S.;
Aleshkin, V.;
Gavrilenko, V.;
Dubinov, A.;
Maremyanin, K.;
Morozov, S.

Publication type:

Article

Renormalization of the band gap in highly photoexcited type-II ZnSe/BeTe structures.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 212, doi. 10.1134/S1063782609020183

By:

Zaitsev, S.;
Yakovlev, D.;
Waag, A.

Publication type:

Article

Consideration for the dynamic depolarization in the effective-medium model for description of optical properties for anisotropic nanostructured semiconductors.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 218, doi. 10.1134/S1063782609020195

By:

Golovan, L.;
Zabotnov, S.;
Timoshenko, V.;
Kashkarov, P.

Publication type:

Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 2

Spinodal decomposition of ZnO-BeO alloys.

Transport in GaAs/Al<sub> x</sub>Ga<sub>1− x</sub>As superlattices with narrow minibands: Effects of interminiband tunneling.

As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus.

Evolution of the photoresponse time of the GaAs/AlGaAs cyclotron resonance quantum Hall effect detector.

Magnetic and electrical properties of layered magnets Tl(Cr,Mn,Co)Se<sub>2</sub>.

Effect of oxidation on the conductivity of nanocrystalline PbTe:In films in an alternating electric field.

Nonlinear response of a double-well nanostructure with electron-electron interaction.

Simulation of solar cells with quantum wells and comparison with conventional solar cells.

Transport in GaAs/Al<sub> x</sub>Ga<sub>1− x</sub>As superlattices with narrow forbidden minibands: Low-frequency negative differential conductivity and current oscillations.

The least number of pairs of layers needed for observation of satellite-structured X-ray diffraction in superlattices. Measurements and calculations of elastic stresses in alternate layers of superlattices.

Nonuniformity of electrical properties for the PbTe single crystals in the growth direction.

The nature of “heavy” electrons in the p-HgTe zero-gap semiconductor.

Features of the band structure for semiconducting iron, ruthenium, and osmium monosilicides.

Growth of n-Si layers by molecular-beam epitaxy on the substrates heavily doped with boron.

Conductivity of ultradispersed SnO<sub>2</sub> ceramic in strong electric fields.

Terbium photoluminescence in yttrium aluminum garnet xerogels.

Absorption, luminescence excitation, and infrared transmittance spectra of ZnS(O)-ZnSe(O) crystals in the context of the band anticrossing theory.

Conductivity anisotropy in the doped Bi<sub>2</sub>Te<sub>3</sub> single crystals.

Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/ p-CdTe heterostructures.

Analysis of forward current-voltage characteristics of nonideal Ti/4 H-SiC Schottky barriers.

Effect of ferroelectric substrate on the conductivity of the semiconductor film.

Properties of heterojunction based on pentacene and perylene derivatives.

Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix.

Magnetoabsorption of the electromagnetic radiation by a two-dimensional electron gas with Rashba’s spin-orbit coupling in a heterojunction with a lateral superlattice.

Difference-frequency generation in a butt-join diode laser.

Renormalization of the band gap in highly photoexcited type-II ZnSe/BeTe structures.

Consideration for the dynamic depolarization in the effective-medium model for description of optical properties for anisotropic nanostructured semiconductors.