Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 1

Results: 25

Vitalii Ivanovich Stafeev (on his 80th birtday).

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 130, doi. 10.1134/S1063782609010254

By:

Alferov, Zh. I.;
Aseev, A. L.;
Gippius, A. A.;
Gulyaev, Yu. V.;
Ivanov-Omskii, V.I.;
Krokhin, O. M.;
Kaplyanskii, A. A.;
Mil'vidskii, M. G.;
Pozhela, Yu. K.;
Pokrovskii, Ya. E.;
Suris, R. A.;
Filachev, A. M.

Publication type:

Article

Continuous-wave disk WGM lasers (λ = 3.0 μm) based on InAs/InAsSbP heterostructures.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 117, doi. 10.1134/S1063782609010230

By:

Averkiev, N. S.;
Astakhova, A. P.;
Grebenshchikova, E. A.;
D.Il&'inskaya, N.;
Kalinina, K. V.;
Kizhaev, S. S.;
Kislyakova, A. Yu.;
Monakhov, A. M.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Numerical simulation of the process of hydrogenation of GaAs.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 121, doi. 10.1134/S1063782609010242

By:

Kagadei, V. A.;
Nefyodtsev, E. V.

Publication type:

Article

Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 112, doi. 10.1134/S1063782609010229

By:

Slipchenko, S. O.;
Bondarev, A. D.;
Vinokurov, D. A.;
Nikolaev, D. N.;
Fetisova, N. V.;
Sokolova, Z. N.;
Pikhtin, N. A.;
Tarasov, I. S.

Publication type:

Article

Conductivity of the opal-VO2 composite at the semiconductor-metal phase transition.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 102, doi. 10.1134/S1063782609010205

By:

Shadrin, E. B.;
Kurdyukov, D. A.;
Ilinskiy, A. V.;
Golubev, V. G.

Publication type:

Article

The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 88, doi. 10.1134/S1063782609010175

By:

Timokhov, D. F.;
Timokhov, F. P.

Publication type:

Article

Apparent low-frequency charge capacitance of semiconducting boron.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 14, doi. 10.1134/S1063782609010047

By:

Tsagareishvili, O. A.;
Chkhartishvili, L. S.;
Gabunia, D. L.

Publication type:

Article

63Cu and 115In NMR study of CuInS2 semiconductor.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 1, doi. 10.1134/S1063782609010011

By:

Khabibullin, I. Kh.;
Matukhin, V. L.;
Ermakov, V. L.;
Gnezdilov, O. I.;
Korzun, B. V.;
Schmidt, E. V.

Publication type:

Article

Features of the structural, electrokinetic, and magnetic properties of the heavily doped ZrNiSn semiconductor: Dy acceptor impurity.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 7, doi. 10.1134/S1063782609010035

By:

Romaka, V. A.;
Fruchart, D.;
Romaka, V. V.;
Hlil, E. K.;
Stadnyk, Yu. V.;
Gorelenko, Yu. K.;
Akselrud, L. G.

Publication type:

Article

Photosensitivity of the Ni- n-GaAs Schottky barriers.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 29, doi. 10.1134/S1063782609010072

By:

Melebaev, D.;
Melebaeva, G. D.;
Rud', V. Yu.;
Rud', Yu. V.

Publication type:

Article

Structural and luminescent properties of ZnO:P films produced by annealing ZnP2 wafers in atomic oxygen.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 21, doi. 10.1134/S1063782609010059

By:

Rogozin, I. V.

Publication type:

Article

The effect of amorphization on the local structure of arsenic chalcogenides.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 4, doi. 10.1134/S1063782609010023

By:

Bordovsky, G. A.;
Marchenko, A. V.;
Seregin, P. P.;
Terukov, E. I.

Publication type:

Article

IR luminescence in thermally treated silicon.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 26, doi. 10.1134/S1063782609010060

By:

Bolotov, V. V.;
Kang, V. E.

Publication type:

Article

Radiative recombination in the CdMgTe matrix with ultrathin narrow-gap CdMnTe layers.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 57, doi. 10.1134/S1063782609010126

By:

Agekyan, V. F.;
Serov, A. Yu.;
Stepanov, Yu. A.;
Filosofov, N. G.;
Bembitov, D. B.;
Karczewski, G.

Publication type:

Article

Effect of halogens on the formation and properties of the porous silicon layers.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 92, doi. 10.1134/S1063782609010187

By:

Bolotov, V. V.;
Sten'kin, Yu. A.;
Davletkil'deev, N. A.;
Krivozubov, O. V.;
Ponomareva, I. V.

Publication type:

Article

Transverse spatial transport in field-effect transistors based on heterostructures with selective doping and the limits of applicability of quasi-hydrodynamic models.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 105, doi. 10.1134/S1063782609010217

By:

Klimova, A. V.;
Lukashin, M. V.;
Pashkovskii, A. B.

Publication type:

Article

Spin transistor based on cadmium fluoride nanostructures.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 78, doi. 10.1134/S1063782609010163

By:

Bagraev, N. T.;
Gimbitskaya, O. N.;
Klyachkin, L. E.;
Malyarenko, A. M.;
Shelykh, I. A.;
Ryskin, A. I.;
Shcheulin, A. S.

Publication type:

Article

Determination of the fractal dimension for the epitaxial n-GaAs surface in the local limit.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 33, doi. 10.1134/S1063782609010084

By:

Torkhov, N. A.;
Bozhkova, V. G.;
V.Ivonin, I.;
Novikov, V. A.

Publication type:

Article

Microstructure and optical properties of In2S3 films produced by thermal evaporation.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 96, doi. 10.1134/S1063782609010199

By:

Goncharova, O. V.;
Gremenok, V. F.

Publication type:

Article

Influence of segregation effects on the electroluminescence spectra of InGaAs/GaAs quantum well heterostructures grown by H-MOVPE.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 63, doi. 10.1134/S1063782609010138

By:

Akchurin, R. Kh.;
Andreev, A. Yu.;
Berliner, L. B.;
Govorkov, O. I.;
Duraev, V. P.;
Maldzhy, A. A.;
Marmalyuk, A. A.;
Padalitsa, A. V.;
Petrovsky, A. R.;
Sabitov, D. V.;
Sukharev, A.

Publication type:

Article

Hysteresis of giant intensity fluctuations of emission for two-dimensional electrons in the conditions for the integer quantum Hall effect.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 69, doi. 10.1134/S106378260901014X

By:

Parakhonsky, A. L.;
Lebedev, M. V.;
Kirpichev, V. E.;
Kukushkin, I. V.

Publication type:

Article

Transmission of hot electrons through a metal-semiconductor interface.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 42, doi. 10.1134/S1063782609010096

By:

Kharlamov, F. V.;
Kharlamov, V. F.

Publication type:

Article

The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 47, doi. 10.1134/S1063782609010102

By:

Shamirzaev, S. H.;
Gulyamov, G.;
Dadamirzaev, M. G.;
Gulyamov, A. G.

Publication type:

Article

Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 52, doi. 10.1134/S1063782609010114

By:

Tyschenko, I. E.;
Voelskow, M.;
Cherkov, A. G.;
Popov, V. P.

Publication type:

Article

Quantum Hall effect in (cadmium flouride)-based nanostructures.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 75, doi. 10.1134/S1063782609010151

By:

Bagraev, N. T.;
Gimbitskaya, O. N.;
Klyachkin, L. E.;
Malyarenko, A. M.;
Shelykh, I. A.;
Ryskin, A. I.;
Shcheulin, A. S.

Publication type:

Article

Works matching IS 10637826 AND DT 2009 AND VI 43 AND IP 1

Vitalii Ivanovich Stafeev (on his 80th birtday).

Continuous-wave disk WGM lasers (λ = 3.0 μm) based on InAs/InAsSbP heterostructures.

Numerical simulation of the process of hydrogenation of GaAs.

Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures.

Conductivity of the opal-VO<sub>2</sub> composite at the semiconductor-metal phase transition.

The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching.

Apparent low-frequency charge capacitance of semiconducting boron.

<sup>63</sup>Cu and <sup>115</sup>In NMR study of CuInS<sub>2</sub> semiconductor.

Features of the structural, electrokinetic, and magnetic properties of the heavily doped ZrNiSn semiconductor: Dy acceptor impurity.

Photosensitivity of the Ni- n-GaAs Schottky barriers.

Structural and luminescent properties of ZnO:P films produced by annealing ZnP<sub>2</sub> wafers in atomic oxygen.

The effect of amorphization on the local structure of arsenic chalcogenides.

IR luminescence in thermally treated silicon.

Radiative recombination in the CdMgTe matrix with ultrathin narrow-gap CdMnTe layers.

Effect of halogens on the formation and properties of the porous silicon layers.

Transverse spatial transport in field-effect transistors based on heterostructures with selective doping and the limits of applicability of quasi-hydrodynamic models.

Spin transistor based on cadmium fluoride nanostructures.

Determination of the fractal dimension for the epitaxial n-GaAs surface in the local limit.

Microstructure and optical properties of In<sub>2</sub>S<sub>3</sub> films produced by thermal evaporation.

Influence of segregation effects on the electroluminescence spectra of InGaAs/GaAs quantum well heterostructures grown by H-MOVPE.

Hysteresis of giant intensity fluctuations of emission for two-dimensional electrons in the conditions for the integer quantum Hall effect.

Transmission of hot electrons through a metal-semiconductor interface.

The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field.

Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer.

Quantum Hall effect in (cadmium flouride)-based nanostructures.