Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 12

Results: 14

Growth of 4 H-polytype silicon carbide ingots on (10 $$ \bar 1 $$ 0) seeds.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1450, doi. 10.1134/S1063782608120142

By:

Avrov, D. D.;
Bulatov, A. V.;
Dorozhkin, S. I.;
Lebedev, A. O.;
Tairov, Yu. M.

Publication type:

Article

Type II broken-gap GaSb1 − x As x/InAs heterojunction ( x < 0.15): Evolution of the band diagram for the ternary solid solution.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1403, doi. 10.1134/S1063782608120051

By:

Romanov, V. V.;
Moiseev, K. d.;
Voronina, T. I.;
Lagunova, T. S.;
Yakovlev, Yu. P.

Publication type:

Article

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1420, doi. 10.1134/S1063782608120099

By:

Jmerik, V. N.;
Mizerov, A. M.;
Shubina, T. V.;
Sakharov, A. V.;
Sitnikova, A. A.;
Kop'ev, P. S.;
Ivanov, S. V.;
Lutsenko, E. V.;
Danilchyk, A. V.;
Rzheutskii, N. V.;
Yablonskii, G. P.

Publication type:

Article

Study of the intermediate layer at the n +-CdS/ p-CdTe interface.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1377, doi. 10.1134/S1063782608120014

By:

Muzafarova, S. A.;
Aitbaev, B. U.;
Mirsagatov, Sh. A.;
Durshimbetov, K.;
Zhanabergenov, Zh.

Publication type:

Article

Energy spectrum of charge carriers in Ag2Te.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1383, doi. 10.1134/S1063782608120026

By:

Aliyev, S. A.;
Agayev, Z. F.;
Selimzadeh, R. I.

Publication type:

Article

Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects).

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1388, doi. 10.1134/S1063782608120038

By:

Poklonski, N. A.;
Vyrko, S. A.;
Zabrodskii, A. G.

Publication type:

Article

Subterahertz self-oscillations in ultrafast self-modulation of optical absorption in GaAs.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1395, doi. 10.1134/S106378260812004X

By:

Ageeva, N. N.;
Bronevoi, I. L.;
Krivonosov, A. N.

Publication type:

Article

Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1413, doi. 10.1134/S1063782608120075

By:

Pociask, M.;
Izhnin, I. I.;
Dvoretsky, S. A.;
Mikhailov, N. N.;
Sidorov, Yu. G.;
Varavin, V. S.;
Mynbaev, K. D.;
Ivanov-Omskii, V. I.

Publication type:

Article

Giant burst of impact ionization in a p-n junction of the 6 H-SiC polytype.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1408, doi. 10.1134/S1063782608120063

By:

Sankin, V. I.;
Shkrebiy, P. P.

Publication type:

Article

Surface states on the n-InN-electrolyte interface.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1416, doi. 10.1134/S1063782608120087

By:

Gutkin, A. A.;
Rudinsky, M. É.;
Brunkov, P. N.;
Klochikhin, A. A.;
Davydov, V. Yu.;
Chen, H.-Y.;
Gwo, S.

Publication type:

Article

The binding energy of excitons and X + and X − trions in one-dimensional systems.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1427, doi. 10.1134/S1063782608120105

By:

Semina, M. A.;
Sergeev, R. A.;
Suris, R. A.

Publication type:

Article

Radiation hardness of SiC subjected to alternating irradiation and annealing.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1434, doi. 10.1134/S1063782608120117

By:

Ivanov, A. M.;
Strokan, N. B.;
Lebedev, A. A.

Publication type:

Article

An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1440, doi. 10.1134/S1063782608120129

By:

Zverev, M. M.;
Gamov, N. A.;
Peregoudov, D. V.;
Studionov, V. B.;
Zdanova, E. V.;
Sedova, I. V.;
Gronin, S. V.;
Sorokin, S. V.;
Ivanov, S. V.;
Kop'ev, P. S.

Publication type:

Article

Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1445, doi. 10.1134/S1063782608120130

By:

Samsonenko, Yu. B.;
Cirlin, G. É;
Egorov, V. A;
Polyakov, N. K.;
Ulin, V. P.;
Dubrovskii, V. G.

Publication type:

Article

Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 12

Growth of 4 H-polytype silicon carbide ingots on (10 $$ \bar 1 $$ 0) seeds.

Type II broken-gap GaSb<sub>1 − x </sub>As x/InAs heterojunction ( x < 0.15): Evolution of the band diagram for the ternary solid solution.

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy.

Study of the intermediate layer at the n <sup>+</sup>-CdS/ p-CdTe interface.

Energy spectrum of charge carriers in Ag<sub>2</sub>Te.

Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects).

Subterahertz self-oscillations in ultrafast self-modulation of optical absorption in GaAs.

Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching.

Giant burst of impact ionization in a p-n junction of the 6 H-SiC polytype.

Surface states on the n-InN-electrolyte interface.

The binding energy of excitons and X <sup>+</sup> and X <sup>−</sup> trions in one-dimensional systems.

Radiation hardness of SiC subjected to alternating irradiation and annealing.

An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures.

Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces.