Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 12

Results: 14

Growth of 4 H-polytype silicon carbide ingots on (10 $$ \bar 1 $$ 0) seeds.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1450, doi. 10.1134/S1063782608120142
By:
- Avrov, D. D.;
- Bulatov, A. V.;
- Dorozhkin, S. I.;
- Lebedev, A. O.;
- Tairov, Yu. M.
Publication type:
Article
AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1420, doi. 10.1134/S1063782608120099
By:
- Jmerik, V. N.;
- Mizerov, A. M.;
- Shubina, T. V.;
- Sakharov, A. V.;
- Sitnikova, A. A.;
- Kop'ev, P. S.;
- Ivanov, S. V.;
- Lutsenko, E. V.;
- Danilchyk, A. V.;
- Rzheutskii, N. V.;
- Yablonskii, G. P.
Publication type:
Article
Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1413, doi. 10.1134/S1063782608120075
By:
- Pociask, M.;
- Izhnin, I. I.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Sidorov, Yu. G.;
- Varavin, V. S.;
- Mynbaev, K. D.;
- Ivanov-Omskii, V. I.
Publication type:
Article
Study of the intermediate layer at the n +-CdS/ p-CdTe interface.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1377, doi. 10.1134/S1063782608120014
By:
- Muzafarova, S. A.;
- Aitbaev, B. U.;
- Mirsagatov, Sh. A.;
- Durshimbetov, K.;
- Zhanabergenov, Zh.
Publication type:
Article
Energy spectrum of charge carriers in Ag2Te.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1383, doi. 10.1134/S1063782608120026
By:
- Aliyev, S. A.;
- Agayev, Z. F.;
- Selimzadeh, R. I.
Publication type:
Article
Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects).
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1388, doi. 10.1134/S1063782608120038
By:
- Poklonski, N. A.;
- Vyrko, S. A.;
- Zabrodskii, A. G.
Publication type:
Article
Subterahertz self-oscillations in ultrafast self-modulation of optical absorption in GaAs.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1395, doi. 10.1134/S106378260812004X
By:
- Ageeva, N. N.;
- Bronevoi, I. L.;
- Krivonosov, A. N.
Publication type:
Article
Type II broken-gap GaSb1 − x As x/InAs heterojunction ( x < 0.15): Evolution of the band diagram for the ternary solid solution.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1403, doi. 10.1134/S1063782608120051
By:
- Romanov, V. V.;
- Moiseev, K. d.;
- Voronina, T. I.;
- Lagunova, T. S.;
- Yakovlev, Yu. P.
Publication type:
Article
Giant burst of impact ionization in a p-n junction of the 6 H-SiC polytype.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1408, doi. 10.1134/S1063782608120063
By:
- Sankin, V. I.;
- Shkrebiy, P. P.
Publication type:
Article
Surface states on the n-InN-electrolyte interface.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1416, doi. 10.1134/S1063782608120087
By:
- Gutkin, A. A.;
- Rudinsky, M. É.;
- Brunkov, P. N.;
- Klochikhin, A. A.;
- Davydov, V. Yu.;
- Chen, H.-Y.;
- Gwo, S.
Publication type:
Article
The binding energy of excitons and X + and X − trions in one-dimensional systems.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1427, doi. 10.1134/S1063782608120105
By:
- Semina, M. A.;
- Sergeev, R. A.;
- Suris, R. A.
Publication type:
Article
Radiation hardness of SiC subjected to alternating irradiation and annealing.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1434, doi. 10.1134/S1063782608120117
By:
- Ivanov, A. M.;
- Strokan, N. B.;
- Lebedev, A. A.
Publication type:
Article
An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1440, doi. 10.1134/S1063782608120129
By:
- Zverev, M. M.;
- Gamov, N. A.;
- Peregoudov, D. V.;
- Studionov, V. B.;
- Zdanova, E. V.;
- Sedova, I. V.;
- Gronin, S. V.;
- Sorokin, S. V.;
- Ivanov, S. V.;
- Kop'ev, P. S.
Publication type:
Article
Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1445, doi. 10.1134/S1063782608120130
By:
- Samsonenko, Yu. B.;
- Cirlin, G. É;
- Egorov, V. A;
- Polyakov, N. K.;
- Ulin, V. P.;
- Dubrovskii, V. G.
Publication type:
Article

Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 12

Growth of 4 H-polytype silicon carbide ingots on (10 $$ \bar 1 $$ 0) seeds.

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy.

Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching.

Study of the intermediate layer at the n <sup>+</sup>-CdS/ p-CdTe interface.

Energy spectrum of charge carriers in Ag<sub>2</sub>Te.

Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects).

Subterahertz self-oscillations in ultrafast self-modulation of optical absorption in GaAs.

Type II broken-gap GaSb<sub>1 − x </sub>As x/InAs heterojunction ( x < 0.15): Evolution of the band diagram for the ternary solid solution.

Giant burst of impact ionization in a p-n junction of the 6 H-SiC polytype.

Surface states on the n-InN-electrolyte interface.

The binding energy of excitons and X <sup>+</sup> and X <sup>−</sup> trions in one-dimensional systems.

Radiation hardness of SiC subjected to alternating irradiation and annealing.

An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures.

Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces.