Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 11

Results: 24

Electrical properties, photoconductivity, and photoluminescence of coarse-grained p-ZnTe.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1264, doi. 10.1134/S1063782608110031

By:

Klevkov, Yu. V.;
Kolosov, S. A.;
Krivobok, V. S.;
Martovisky, V. P.;
Nikolaev, S. N.

Publication type:

Article

Fast optical recording media based on semiconductor nanostructures for image recording and processing.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1362, doi. 10.1134/S1063782608110237

By:

Kasherininov, P. G.;
Tomasov, A. A.

Publication type:

Article

Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In0.2Ga0.8N/GaN quantum wells.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1342, doi. 10.1134/S1063782608110195

By:

Lelikov, Yu. S.;
Bochkareva, N. I.;
Gorbunov, R. I.;
Martynov, I. A.;
Rebane, Yu. T.;
Tarkin, D. V.;
Shreter, Yu. G.

Publication type:

Article

Specific features of light current-voltage characteristics of p-i-n structures based on amorphous silicon in the case of the tunnel-drift mechanism of dark current transport.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1334, doi. 10.1134/S1063782608110171

By:

Andreev, A. A.

Publication type:

Article

Formation of ohmic contacts to low-resistivity Cd1 − x Mg x Te alloys for photovolatic applications.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1286, doi. 10.1134/S1063782608110079

By:

Parfenyuk, O. A.;
Ilashchuk, M. I.;
Ulyanitsky, K. S.

Publication type:

Article

Model of thermal oxidation of silicon at the volume-reaction front.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1370, doi. 10.1134/S1063782608110249

By:

Aleksandrov, O. V.;
Dusj, A. I.

Publication type:

Article

Features of the capacitance-voltage characteristics in a MOS structure due to the oxide charge.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1351, doi. 10.1134/S1063782608110213

By:

Bobrova, E. A.;
Omeljanovskaya, N. M.

Publication type:

Article

Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80–300 K.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1346, doi. 10.1134/S1063782608110201

By:

Emel'yanov, A. M.

Publication type:

Article

Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1355, doi. 10.1134/S1063782608110225

By:

Bochkareva, N. I.;
Gorbunov, R. I.;
Klochkov, A. V.;
Lelikov, Yu. S.;
Martynov, I. A.;
Rebane, Yu. T.;
Belov, A. S.;
Shreter, Yu. G.

Publication type:

Article

Electrical and photoelectric characteristics of structures based on InSe and GaSe layered semiconductors irradiated with 12.5-MeV electrons.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1292, doi. 10.1134/S1063782608110092

By:

Kovalyuk, Z. D.;
Politanska, O. A.;
Sydor, O. N.;
Maslyuk, V. T.

Publication type:

Article

Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1298, doi. 10.1134/S1063782608110109

By:

Voitsekhovskii, A. V.;
Nesmelov, S. N.;
Dzyadookh, S. M.;
Varavin, V. S.;
Dvoretskii, S. A.;
Mikhailov, N. N.;
Sidorov, Yu. G.;
Vasiliev, V. V.

Publication type:

Article

Magnetooptical properties of a single CdMnSe/CdMgSe quantum well.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1318, doi. 10.1134/S1063782608110146

By:

Reshina, I. I.;
Ivanov, S. V.

Publication type:

Article

Solution of the problem of charge-carrier injection into an insulating layer under self-consistent boundary conditions at contacts.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1309, doi. 10.1134/S1063782608110122

By:

Shashkin, V. I.;
Vostokov, N. V.

Publication type:

Article

Role of spontaneous polarization in the formation of NH-SiC/3 C-SiC/ NH-SiC structures based on silicon carbide polytypes.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1289, doi. 10.1134/S1063782608110080

By:

Davydov, S. Yu.;
Troshin, A. V.

Publication type:

Article

Effect of electric field in the course of obtaining a-SiO x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1327, doi. 10.1134/S106378260811016X

By:

Undalov, Yu. K.;
Terukov, E. I.;
Gusev, O. B.;
Lebedev, V. M.;
Trapeznikova, I. N.

Publication type:

Article

Static current-voltage characteristics of Au/CaF2/ n-Si(111) MIS tunneling structures.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1304, doi. 10.1134/S1063782608110110

By:

Suturin, S. M.;
Banshchikov, A. G.;
Sokolov, N. S.;
Tyaginov, S. E.;
Vexler, M. I.

Publication type:

Article

Dependence of the mechanism of current flow in the in- n-GaN alloyed ohmic contact on the majority carrier concentration.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1315, doi. 10.1134/S1063782608110134

By:

Bessolov, V. N.;
Blank, T. V.;
Goldberg, Yu. A.;
Konstantinov, O. V.;
Posse, E. A.

Publication type:

Article

Properties and structure of (As2Se3)1 − z (SnSe2) z − x (Tl2Se) x and (As2Se3)1 − z (SnSe) z − x (Tl2Se) x glasses

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1323, doi. 10.1134/S1063782608110158

By:

Bordovsky, G. A.;
Marchenko, A. V.;
Terukov, E. I.;
Seregin, P. P.;
Likhodeeva, T. V.

Publication type:

Article

Structural and energy characteristics of native vacancy-type defects in the biaxially stressed GaN lattice.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1255, doi. 10.1134/S1063782608110018

By:

Bez'yazychnaya, T. V.;
Zelenkovskii, V. M.;
Gurskii, A. L.;
Ryabtsev, G. I.

Publication type:

Article

Deposition-rate dependence of the height of GaAs-nanowires.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1259, doi. 10.1134/S106378260811002X

By:

Sibirev, N. V.;
Dubrovskii, V. G.;
Cirlin, G. E.;
Egorov, V. A.;
Samsonenko, Yu. B.;
Ustinov, V. M.

Publication type:

Article

Electron spin resonance of interacting spins in n-Ge: II. Change in the width and shape of lines.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1274, doi. 10.1134/S1063782608110055

By:

Veinger, A. I.;
Zabrodskii, A. G.;
Tisnek, T. V.;
Goloshchapov, S. I.

Publication type:

Article

Energy spectrum of charge carriers in Ag2Te.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1270, doi. 10.1134/S1063782608110043

By:

Aliev, F. F.;
Jafarov, M. B.

Publication type:

Article

Electrical and galvanomagnetic properties of cadmium telluride films synthesized under highly nonequilibrium conditions.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1282, doi. 10.1134/S1063782608110067

By:

Belyaev, A. P.;
Rubets, V. P.;
Antipov, V. V.;
Grishin, V. V.

Publication type:

Article

Photosensitive properties of metal-containing polydisalicylidene azomethines.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1338, doi. 10.1134/S1063782608110183

By:

Alexandrova, E. L.;
Ivanov, A. G.;
Heller, N. M.;
Nadezhdina, L. B.;
Shamanin, V. V.

Publication type:

Article

Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 11

Electrical properties, photoconductivity, and photoluminescence of coarse-grained p-ZnTe.

Fast optical recording media based on semiconductor nanostructures for image recording and processing.

Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In<sub>0.2</sub>Ga<sub>0.8</sub>N/GaN quantum wells.

Specific features of light current-voltage characteristics of p-i-n structures based on amorphous silicon in the case of the tunnel-drift mechanism of dark current transport.

Formation of ohmic contacts to low-resistivity Cd<sub>1 − x </sub>Mg<sub> x </sub>Te alloys for photovolatic applications.

Model of thermal oxidation of silicon at the volume-reaction front.

Features of the capacitance-voltage characteristics in a MOS structure due to the oxide charge.

Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80–300 K.

Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities.

Electrical and photoelectric characteristics of structures based on InSe and GaSe layered semiconductors irradiated with 12.5-MeV electrons.

Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy.

Magnetooptical properties of a single CdMnSe/CdMgSe quantum well.

Solution of the problem of charge-carrier injection into an insulating layer under self-consistent boundary conditions at contacts.

Role of spontaneous polarization in the formation of NH-SiC/3 C-SiC/ NH-SiC structures based on silicon carbide polytypes.

Effect of electric field in the course of obtaining a-SiO<sub> x </sub>:H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions.

Static current-voltage characteristics of Au/CaF<sub>2</sub>/ n-Si(111) MIS tunneling structures.

Dependence of the mechanism of current flow in the in- n-GaN alloyed ohmic contact on the majority carrier concentration.

Properties and structure of (As<sub>2</sub>Se<sub>3</sub>)<sub>1 − z </sub>(SnSe<sub>2</sub>)<sub> z − x </sub>(Tl<sub>2</sub>Se)<sub> x </sub> and (As<sub>2</sub>Se<sub>3</sub>)<sub>1 − z </sub>(SnSe)<sub> z − x </sub>(Tl<sub>2</sub>Se)<sub> x </sub> glasses

Structural and energy characteristics of native vacancy-type defects in the biaxially stressed GaN lattice.

Deposition-rate dependence of the height of GaAs-nanowires.

Electron spin resonance of interacting spins in n-Ge: II. Change in the width and shape of lines.

Energy spectrum of charge carriers in Ag<sub>2</sub>Te.

Electrical and galvanomagnetic properties of cadmium telluride films synthesized under highly nonequilibrium conditions.

Photosensitive properties of metal-containing polydisalicylidene azomethines.