Effect of potential fluctuations on the energy structure of GaAs/AlGaAs quantum wells with A<sup>+</sup> centers.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1200, doi. 10.1134/S1063782608100102
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 10
Results: 19
1
2
Consideration of spontaneous polarization in the problem of NH-SiC/3 C-SiC/ NH-SiC heterostructures formed by cubic (3 C) and hexagonal ( NH) silicon carbide polytypes.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1187, doi. 10.1134/S1063782608100084
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- Publication type:
- Article
3
Specific features of the generation-recombination properties of bistable defects in semiconductors: Manifestation in Hoffmann’s function.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1171, doi. 10.1134/S1063782608100060
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- Publication type:
- Article
4
Mössbauer U <sup>−</sup> centers as tools for studying the Bose condensation in semiconductors.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1153, doi. 10.1134/S1063782608100047
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- Publication type:
- Article
5
Effect of impurities on the steady component of the current in a quantum wire under the joint action of ac and dc fields.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1204, doi. 10.1134/S1063782608100114
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- Publication type:
- Article
6
Ab initio calculations of phonon spectra of (GaP)<sub> n </sub>(AlP)<sub> m </sub> superlattices.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1208, doi. 10.1134/S1063782608100126
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- Publication type:
- Article
7
Photophysical properties of silicon-containing poly[salicylidene azomethine]s.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1214, doi. 10.1134/S1063782608100138
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- Publication type:
- Article
8
Comparative analysis of limiting photoconversion efficiency of usual solar cells and solar cells with quantum wells.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1219, doi. 10.1134/S106378260810014X
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- Publication type:
- Article
9
Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1228, doi. 10.1134/S1063782608100151
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- Publication type:
- Article
10
Highly sensitive submillimeter InSb photodetectors.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1234, doi. 10.1134/S1063782608100163
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- Publication type:
- Article
11
Properties of waveguide modes in a photon crystal based on slotted silicon with a defect.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1237, doi. 10.1134/S1063782608100175
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- Publication type:
- Article
12
Specific features of the effect of irradiation with electrons and neutrons on photoelectric properties of CdS single crystals nominally undoped and doped with Cu.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1244, doi. 10.1134/S1063782608100187
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- Publication type:
- Article
13
Catalytic properties of composite amorphous carbon-platinum layers in fuel cells.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1249, doi. 10.1134/S1063782608100199
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- Publication type:
- Article
14
Parameters of vacancies’ formation in the carbon-subgroup crystals.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1133, doi. 10.1134/S1063782608100011
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- Publication type:
- Article
15
Effect of a phase transition on the electron energy spectrum in Ag<sub>2</sub>S.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1146, doi. 10.1134/S1063782608100023
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- Publication type:
- Article
16
Autosolitons in bistable system of silicon with deep impurity levels.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1149, doi. 10.1134/S1063782608100035
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- Publication type:
- Article
17
Lorentz number and Hall factor in degenerate semiconductors during resonance scattering of charge carriers.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1161, doi. 10.1134/S1063782608100059
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- Publication type:
- Article
18
Examination of properties of epitaxial and bulk gallium antimonide.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1179, doi. 10.1134/S1063782608100072
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- Publication type:
- Article
19
Exciton states and photoluminescence of silicon and germanium nanocrystals in an Al<sub>2</sub>O<sub>3</sub> matrix.
- Published in:
- Semiconductors, 2008, v. 42, n. 10, p. 1194, doi. 10.1134/S1063782608100096
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- Publication type:
- Article