Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 9

Results: 22

Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1084, doi. 10.1134/S1063782608090145

By:

Vasil;evskiǐ, I. S.;
Galiev, G. B.;
Klimov, E. A.;
Mokerov, V. G.;
Shirokov, S. S.;
Imamov, R. M.;
Subbotin, I. A.

Publication type:

Article

Electron emission from multilayer ensembles of vertically coupled InAs quantum dots in an n-GaAs matrix.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1104, doi. 10.1134/S1063782608090170

By:

Gutkin, A. A.;
Brunkov, P. N.;
Egorov, A. Yu.;
Zhukov, A. E.;
Konnikov, S. G.

Publication type:

Article

Magneto-photoluminescence in a type-II broken-gap n-GaInAsSb/ p-InAs heterojunction.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1108, doi. 10.1134/S1063782608090182

By:

Moiseev, K. D.;
Mikhaǐlova, M. P.;
Yakovlev, Yu. P.;
Korolev, K. A.;
Meinning, C.;
McCombe, B.

Publication type:

Article

Photoluminescence of GeSi/Si nanoclusters formed by sublimation molecular-beam epitaxy in GeH4 medium.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1098, doi. 10.1134/S1063782608090169

By:

Filatov, D. O.;
Kruglova, M. V.;
Isakov, M. A.;
Siprova, S. V.;
Marychev, M. O.;
Shengurov, V. G.;
Chalkov, V. Yu.;
Denisov, S. A.

Publication type:

Article

Methylthiol adsorption on GaAs(100)-(2 × 4) surface: Ab initio quantum-chemical analysis.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1048, doi. 10.1134/S1063782608090091

By:

Lebedev, M. V.

Publication type:

Article

Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1127, doi. 10.1134/S1063782608090224

By:

Kachurin, G. A.;
Cherkova, S. G.;
Marin, D. V.;
Gutakovskiǐ, A. K.;
Cherkov, A. G.;
Volodin, V. A.

Publication type:

Article

Vibrational spectroscopy of amorphous carbon modified with Pt.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1113, doi. 10.1134/S1063782608090194

By:

Ivanov-Omskiǐ, V. I.;
Zvonareva, T. K.;
Frolova, G. S.

Publication type:

Article

Diffusion of implanted sodium in oxygen-containing silicon.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1122, doi. 10.1134/S1063782608090212

By:

Korol', V. M.;
Vedenyapin, S. A.;
Zastavnoǐ, A. V.;
Ovchinnikov, V.

Publication type:

Article

Study of single crystals of the CuIn3Se5 ternary compound.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1030, doi. 10.1134/S1063782608090054

By:

Bodnar', I. v.

Publication type:

Article

Cyclic behavior of ultrafast self-modulation of the light-absorption spectrum under conditions of pump and stimulated emission in GaAs.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1037, doi. 10.1134/S1063782608090078

By:

Ageeva, N. N.;
Bronevoi, I. L.;
Krivonosov, A. N.;
Nalet, T. A.

Publication type:

Article

Variations in the impurity composition and microhardness of surface layers in silicon crystals caused by a magnetic field.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1044, doi. 10.1134/S106378260809008X

By:

Makara, V. A.;
Vasiliev, M. A.;
Steblenko, L. P.;
Koplak, O. V.;
Kurilyuk, A. N.;
Kobzar', Yu. L.;
Naumenko, S. N.

Publication type:

Article

Specific features of use of wide-gap semi-insulating materials for recording of nuclear radiation.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1117, doi. 10.1134/S1063782608090200

By:

Ivanov, A. M.;
Strokan, N. B.;
Lebedev, A. A.

Publication type:

Article

Phase formation and phase transformations in Bi-Te films with nanoscale thickness.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1009, doi. 10.1134/S1063782608090017

By:

Akhmedov, K. M.

Publication type:

Article

Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1055, doi. 10.1134/S1063782608090108

By:

Seredin, P. V.;
Domashevskaya, É. P.;
Lukin, A. N.;
Arsent'ev, I. N.;
Vinokurov, D. A.;
Tarasov, I. S.

Publication type:

Article

Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1062, doi. 10.1134/S106378260809011X

By:

Stamov, I. G.;
Tkachenko, D. V.

Publication type:

Article

Baric properties of InAs quantum dots.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1076, doi. 10.1134/S1063782608090133

By:

Novikov, B. V.;
Zegrya, G. G.;
Peleshchak, R. M.;
Dan'kiv, O. O.;
Gaisin, V. A.;
Talalaev, V. G.;
Shtrom, I. V.;
Cirlin, G. E.

Publication type:

Article

Edge luminescence of ZnO nanorods on high-intensity optical excitation.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1092, doi. 10.1134/S1063782608090157

By:

Gruzintsev, A. N.;
Red'kin, A.;
Yakimov, E. E.;
Barthou, C.

Publication type:

Article

Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga x In1 − x As y P1 − y /GaInP/GaAs(001) heterostructures.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1069, doi. 10.1134/S1063782608090121

By:

Domashevskaya, E. P.;
Gordienko, N. N.;
Rumyantseva, N. A.;
Agapov, B. L.;
Seredin, P. V.;
Bityutskaya, L. A.;
Arsent'ev, I. N.;
Vavilova, L. S.;
Tarasov, I. S.

Publication type:

Article

Relaxation processes in conductivity of Cd1 − x Mn x Te crystals (0.02 < x < 0.55).

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1012, doi. 10.1134/S1063782608090029

By:

Nikonyuk, E. S.;
Zakharuk, Z. I.;
Kuchma, M. I.;
Shlyakhovyǐ, V. L.;
Rarenko, A. I.;
Yuriychuk, I. M.

Publication type:

Article

Relaxation of excited donor states in silicon with emission of intervalley phonons.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1016, doi. 10.1134/S1063782608090030

By:

Tsyplenkov, V. V.;
Demidov, E. V.;
Kovalevsky, K. A.;
Shastin, V. N.

Publication type:

Article

Specific features of luminescence spectra of ZnS:O and ZnS:Cu(O) crystals in the context of the band anticrossing theory.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1023, doi. 10.1134/S1063782608090042

By:

Morozova, N. K.;
Mideros, D. A.;
Galstyan, V. G.;
Gavrishchuk, E. M.

Publication type:

Article

Effect of magnetic field on the current-voltage characteristic of the n-GaAs- p-Ge heterojunction.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1034, doi. 10.1134/S1063782608090066

By:

Gadjialiev, M. M.;
Pirmagomedov, Z. Sh.

Publication type:

Article

Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 9

Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides.

Electron emission from multilayer ensembles of vertically coupled InAs quantum dots in an n-GaAs matrix.

Magneto-photoluminescence in a type-II broken-gap n-GaInAsSb/ p-InAs heterojunction.

Photoluminescence of GeSi/Si nanoclusters formed by sublimation molecular-beam epitaxy in GeH<sub>4</sub> medium.

Methylthiol adsorption on GaAs(100)-(2 × 4) surface: Ab initio quantum-chemical analysis.

Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals.

Vibrational spectroscopy of amorphous carbon modified with Pt.

Diffusion of implanted sodium in oxygen-containing silicon.

Study of single crystals of the CuIn<sub>3</sub>Se<sub>5</sub> ternary compound.

Cyclic behavior of ultrafast self-modulation of the light-absorption spectrum under conditions of pump and stimulated emission in GaAs.

Variations in the impurity composition and microhardness of surface layers in silicon crystals caused by a magnetic field.

Specific features of use of wide-gap semi-insulating materials for recording of nuclear radiation.

Phase formation and phase transformations in Bi-Te films with nanoscale thickness.

Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers.

Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide.

Baric properties of InAs quantum dots.

Edge luminescence of ZnO nanorods on high-intensity optical excitation.

Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga<sub> x </sub>In<sub>1 − x </sub>As<sub> y </sub>P<sub>1 − y </sub>/GaInP/GaAs(001) heterostructures.

Relaxation processes in conductivity of Cd<sub>1 − x </sub>Mn<sub> x </sub>Te crystals (0.02 < x < 0.55).

Relaxation of excited donor states in silicon with emission of intervalley phonons.

Specific features of luminescence spectra of ZnS:O and ZnS:Cu(O) crystals in the context of the band anticrossing theory.

Effect of magnetic field on the current-voltage characteristic of the n-GaAs- p-Ge heterojunction.