Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 7

Results: 20

Formation kinetics of various types of hydrogen-related donors in proton-implanted silicon.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 873, doi. 10.1134/S1063782608070208

By:

Pokotilo, Yu. M.;
Petukh, A. N.;
Dzichkovski, O. A.

Publication type:

Article

InGaN nanoinclusions in an AlGaN matrix.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 788, doi. 10.1134/S1063782608070075

By:

Sizov, V. S.;
Tsatsul'nikov, A. F.;
Lundin, V. V.

Publication type:

Article

Admittance and nonlinear capacitance of a multilayer metal-semiconductor structure.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 783, doi. 10.1134/S1063782608070063

By:

Vostokov, N. V.;
Shashkin, V. I.

Publication type:

Article

Effect of oxygen on structure and electronic properties of silicon nanoclusters Si n ( n = 5, 6, 10, 18).

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 800, doi. 10.1134/S1063782608070099

By:

Gnidenko, A. A.;
Zavodinsky, V. G.

Publication type:

Article

Optical confinement in laser diodes based on nitrides of Group III elements. Part 1: Theory and optical properties of materials.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 845, doi. 10.1134/S1063782608070154

By:

Slobodyan, T. E.;
Bulashevich, A.K.;
Karpov, S. Yu

Publication type:

Article

Optical confinement in laser diodes based on nitrides of Group III elements. Part 2: Analysis of heterostructures on various substrates.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 852, doi. 10.1134/S1063782608070166

By:

Slobodyan, T. E.;
Bulashevich, K. A.;
Karpov, S. Yu.

Publication type:

Article

Exchange enhancement of the g factor in InAs/AlSb heterostructures.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 828, doi. 10.1134/S1063782608070129

By:

Aleshkin, V. Ya.;
Gavrilenko, V. I.;
Ikonnikov, A. V.;
Krishtopenko, S. S.;
Sadofyev, Yu. G.;
Spirin, K. E.

Publication type:

Article

Relaxation of excitons in semimagnetic asymmetric double quantum wells.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 813, doi. 10.1134/S1063782608070117

By:

Zaitsev, S. V.;
Brichkin, A. S.;
Dorozhkin, P. S.;
Bacher, G.

Publication type:

Article

Measurement and comparison of silicon p-i-n-photodiodes with ac impedance at different voltages.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 834, doi. 10.1134/S1063782608070130

By:

Özden, S.;
Bayhan, H.;
Dönmez, A.;
Bayhan, M.

Publication type:

Article

Electric-field control of the occupancy of the upper laser subband in quantum-well structures with asymmetric barriers designed for unipolar laser operation.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 838, doi. 10.1134/S1063782608070142

By:

Aleshchenko, Yu. A.;
Zhukov, A E..;
Kapaev, V. V.;
Kopaev, Yu. V.;
Kop'ev, P. S.;
Ustinov, V. M.

Publication type:

Article

Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 805, doi. 10.1134/S1063782608070105

By:

Mamutin, V. V.;
Egorov, A. Yu.;
Kryzhanovskaya, N. V.;
Mikhrin, V. S.;
Nadtochy, A. M.;
Pirogov, E. V.

Publication type:

Article

Periodic formation of transient population inversion for intersubband laser transitions in quantum wells.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 794, doi. 10.1134/S1063782608070087

By:

Kukushkin, V. A.

Publication type:

Article

Photoluminescence spectra of n-ZnO/ p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 766, doi. 10.1134/S1063782608070038

By:

Mezdrogina, M. M.;
Krivolapchuk, V. V.;
Feoktistov, N. A.;
Danilovskiĭ, É. Yu.;
Kuzmin, R. V.;
Razumov, S. V.;
Kukushkin, S. A.;
Osipov, A. V.

Publication type:

Article

Mechanism of local amorphization of a heavily doped Ti1 − x V x CoSb intermetallic semiconductor.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 753, doi. 10.1134/S1063782608070014

By:

Romaka, V. A.;
Stadnyk, Yu. V.;
Akselrud, L. G.;
Romaka, V. V.;
Fruchart, D.;
Rogl, P.;
Davydov, V. N.;
Gorelenko, Yu. K.

Publication type:

Article

Fundamental spectra of optical functions of ferroelectric sodium nitrite.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 761, doi. 10.1134/S1063782608070026

By:

Sobolev, V. V.;
Kalugin, A. I.;
Sobolev, V. Val.;
Iskhakova, S. G.

Publication type:

Article

CdTe as a passivating layer in CdTe/HgCdTe heterostructures.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 772, doi. 10.1134/S106378260807004X

By:

Virt, I. S.;
Kurilo, I. V.;
Rudyĭ, I. A.;
Sizov, F. F.;
Mikhaĭlov, N. M.;
Smirnov, R. N.

Publication type:

Article

Properties of barrier contacts with nanosize TiB x layers to InP.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 777, doi. 10.1134/S1063782608070051

By:

Arsentyev, I. N.;
Bobyl, A. V.;
Tarasov, I. S.;
Boltovets, N. S.;
Ivanov, V. N.;
Belyaev, A. E.;
Kamalov, A. B.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, O. S.;
Milenin, V. V.;
Russu, E. V.

Publication type:

Article

Changes in characteristics of gadolinium, titanium, and erbium oxide films on the SiC surface under microwave treatment.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 868, doi. 10.1134/S1063782608070191

By:

Bacherikov, Yu. Yu.;
Konakova, R. V.;
Milenin, V. V.;
Okhrimenko, O. B.;
Svetlichnyi, A. M.;
Polyakov, V. V.

Publication type:

Article

Pulsed breakdown of 4 H-SiC Schottky diodes terminated with a boron-implanted p-n junction.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 858, doi. 10.1134/S1063782608070178

By:

Ivanov, P. A.;
Grekhov, I. V.;
Potapov, A. S.;
Samsonova, T. P.

Publication type:

Article

High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 862, doi. 10.1134/S106378260807018X

By:

Murashova, A. V.;
Vinokurov, D. A.;
Pikhtin, N. A.;
Slipchenko, S. O.;
Shamakhov, V. V.;
Vasilyeva, V. V.;
Kapitonov, V. A.;
Leshko, A. Yu.;
Lyutetskiy, A. V.;
Nalet, T. A.;
Nikolaev, D. N.;
Stankevich, A. L.;
Fetisova, N. V.;
Tarasov, I. S.;
Kim, Y. S.;
Kang, D. H.;
Lee, C. Y.

Publication type:

Article

Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 7

Formation kinetics of various types of hydrogen-related donors in proton-implanted silicon.

InGaN nanoinclusions in an AlGaN matrix.

Admittance and nonlinear capacitance of a multilayer metal-semiconductor structure.

Effect of oxygen on structure and electronic properties of silicon nanoclusters Si<sub> n </sub> ( n = 5, 6, 10, 18).

Optical confinement in laser diodes based on nitrides of Group III elements. Part 1: Theory and optical properties of materials.

Optical confinement in laser diodes based on nitrides of Group III elements. Part 2: Analysis of heterostructures on various substrates.

Exchange enhancement of the g factor in InAs/AlSb heterostructures.

Relaxation of excitons in semimagnetic asymmetric double quantum wells.

Measurement and comparison of silicon p-i-n-photodiodes with ac impedance at different voltages.

Electric-field control of the occupancy of the upper laser subband in quantum-well structures with asymmetric barriers designed for unipolar laser operation.

Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates.

Periodic formation of transient population inversion for intersubband laser transitions in quantum wells.

Photoluminescence spectra of n-ZnO/ p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures.

Mechanism of local amorphization of a heavily doped Ti<sub>1 − x </sub>V<sub> x </sub>CoSb intermetallic semiconductor.

Fundamental spectra of optical functions of ferroelectric sodium nitrite.

CdTe as a passivating layer in CdTe/HgCdTe heterostructures.

Properties of barrier contacts with nanosize TiB<sub> x </sub> layers to InP.

Changes in characteristics of gadolinium, titanium, and erbium oxide films on the SiC surface under microwave treatment.

Pulsed breakdown of 4 H-SiC Schottky diodes terminated with a boron-implanted p-n junction.

High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures.