Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 6

Results: 18

Electrochemical etching of macropores in silicon with grooved etch seeds.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 746, doi. 10.1134/S1063782608060183

By:

Astrova, E. V.;
Nechitaĭlov, A. A.

Publication type:

Article

Generation of superradiation in quantum dot nanoheterostructures.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 714, doi. 10.1134/S1063782608060134

By:

Savelyev, A. V.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Gordeev, N. Yu.;
Seisyan, R. P.;
Zegrya, G. G.

Publication type:

Article

Features of long-term relaxation of capacitance in rectifying structures based on n-ZnP2.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 662, doi. 10.1134/S1063782608060067

By:

Stamov, I. G.;
Tkachenko, D. V.

Publication type:

Article

SiO x layer formation during plasma sputtering of Si and SiO2 targets.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 731, doi. 10.1134/S106378260806016X

By:

Karpov, A. N.;
Marin, D. V.;
Volodin, V. A.;
Jedrzejewski, J.;
Kachurin, G. A.;
Savir, E.;
Shwartz, N. L.;
Yanovitskaya, Z. Sh.;
Balberg, I.;
Goldstein, Y.

Publication type:

Article

Changes in optical properties of CdS nanoclusters in langmuir-blodgett films on passivation in ammonia.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 702, doi. 10.1134/S1063782608060110

By:

Bagaev, E. A.;
Zhuravlev, K. S.;
Sveshnikova, L. L.;
Shcheglov, D. V.

Publication type:

Article

Wave functions of hot excitons in semiconductors with degenerate bands.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 642, doi. 10.1134/S106378260806002X

By:

Efanov, A. V.

Publication type:

Article

Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous-and stimulated-emission conditions.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 737, doi. 10.1134/S1063782608060171

By:

Vorob'ev, L. E.;
Zerova, V. L.;
Borshchev, K. S.;
Sokolova, Z. N.;
Tarasov, I. S.;
Belenky, G.

Publication type:

Article

Light-enhanced sensitivity of SnO2 − x gas sensors.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 726, doi. 10.1134/S1063782608060158

By:

Gulyaev, A. M.;
Le Van Van;
Sarach, O. B.;
Mukhina, O. B.

Publication type:

Article

Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 675, doi. 10.1134/S1063782608060080

By:

Gurin, N. T.;
Sabitov, O. Yu.

Publication type:

Article

Dependence of the electrical parameters of MBE-grown Cd x Hg1 − x Te films on the level of doping with indium.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 648, doi. 10.1134/S1063782608060031

By:

Varavin, V. S.;
Dvoretskiĭ, S. A.;
Ikusov, D. G.;
Mikhaĭlov, N. N.;
Sidorov, Yu. G.;
Sidorov, G. Yu.;
Yakushev, M. V.

Publication type:

Article

Electronic characteristics of the singly ionized pair of phosphorus donors in silicon and operations with charge qubits.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 655, doi. 10.1134/S1063782608060055

By:

Voron'ko, A. N.

Publication type:

Article

Sources of spontaneous emission based on indium arsenide.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 625, doi. 10.1134/S1063782608060018

By:

Zotova, N. V.;
Il'inskaya, N. D.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyi, M. A.;
Stus', N. M.

Publication type:

Article

X-ray spectrum microanalysis of semiconductor epitaxial heterostructures on the basis of a monte carlo simulation of electron transport.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 669, doi. 10.1134/S1063782608060079

By:

Popova, T. B.;
Bakaleĭnikov, L. A.;
Zamoryanskaya, M. V.;
Flegontova, E. Yu.

Publication type:

Article

Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 651, doi. 10.1134/S1063782608060043

By:

Sidorov, G. Yu.;
Mikhaĭlov, N. N.;
Varavin, V. S.;
Ikusov, D. G.;
Sidorov, Yu. G.;
Dvoretskiĭ, S. A.

Publication type:

Article

Hybrid-phonon resonances in a quantum channel.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 694, doi. 10.1134/S1063782608060109

By:

Karpunin, V. V.;
Margulis, V. E.

Publication type:

Article

Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 710, doi. 10.1134/S1063782608060122

By:

Cirlin, G. E.;
Sibirev, N. V.;
Sartel, C.;
Harmand, J.-C.

Publication type:

Article

Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 689, doi. 10.1134/S1063782608060092

By:

Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Klad'ko, V. P.;
Konakova, R. V.;
Kudrik, Ya. Ya.;
Kuchuk, A. V.;
Milenin, V. V.;
Sveshnikov, Yu. N.;
Sheremet, V. N.

Publication type:

Article

Energy characteristics of excitons in structures based on InGaN alloys.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 720, doi. 10.1134/S1063782608060146

By:

Usov, S.;
Tsatsul’nikov, A.;
Lundin, V.;
Sakharov, A.;
Zavarin, E.;
Sinitsyn, M.;
Ledentsov, N.

Publication type:

Article

Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 6

Electrochemical etching of macropores in silicon with grooved etch seeds.

Generation of superradiation in quantum dot nanoheterostructures.

Features of long-term relaxation of capacitance in rectifying structures based on n-ZnP<sub>2</sub>.

SiO<sub> x </sub> layer formation during plasma sputtering of Si and SiO<sub>2</sub> targets.

Changes in optical properties of CdS nanoclusters in langmuir-blodgett films on passivation in ammonia.

Wave functions of hot excitons in semiconductors with degenerate bands.

Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous-and stimulated-emission conditions.

Light-enhanced sensitivity of SnO<sub>2 − x </sub> gas sensors.

Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off.

Dependence of the electrical parameters of MBE-grown Cd<sub> x </sub>Hg<sub>1 − x </sub>Te films on the level of doping with indium.

Electronic characteristics of the singly ionized pair of phosphorus donors in silicon and operations with charge qubits.

Sources of spontaneous emission based on indium arsenide.

X-ray spectrum microanalysis of semiconductor epitaxial heterostructures on the basis of a monte carlo simulation of electron transport.

Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy.

Hybrid-phonon resonances in a quantum channel.

Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy.

Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride.

Energy characteristics of excitons in structures based on InGaN alloys.