Threshold characteristics of an IR laser based on deep InAsSb/AlSb quantum well.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 557, doi. 10.1134/S1063782608050126
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 5
Results: 22
1
2
Infrared transmittance spectra of photoluminescent oxide films with Si and Ge quantum dots formed by pulsed laser ablation.
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- Semiconductors, 2008, v. 42, n. 5, p. 545, doi. 10.1134/S1063782608050102
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- Publication type:
- Article
3
Study of self-organization in disordered materials using information theory.
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- Semiconductors, 2008, v. 42, n. 5, p. 499, doi. 10.1134/S1063782608050011
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- Publication type:
- Article
4
Optical and photoelectrical properties of AgCd<sub>2</sub>GaS<sub>4</sub> single-crystal compounds.
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- Semiconductors, 2008, v. 42, n. 5, p. 508, doi. 10.1134/S1063782608050035
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- Publication type:
- Article
5
Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures.
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- Semiconductors, 2008, v. 42, n. 5, p. 540, doi. 10.1134/S1063782608050096
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- Publication type:
- Article
6
Comparative analysis of the mechanisms of interface formation in a film structure under equilibrium and strongly nonequilibrium condition.
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- Semiconductors, 2008, v. 42, n. 5, p. 505, doi. 10.1134/S1063782608050023
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- Publication type:
- Article
7
Y and Z luminescence of polycrystalline cadmium telluride grown by a nonequilibrium reaction of the direct synthesis of components.
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- Semiconductors, 2008, v. 42, n. 5, p. 522, doi. 10.1134/S1063782608050060
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- Publication type:
- Article
8
Electroluminescence and phototrigger effect in single crystals of GaS<sub> x </sub>Se<sub>1− x </sub> alloys.
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- Semiconductors, 2008, v. 42, n. 5, p. 518, doi. 10.1134/S1063782608050059
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- Publication type:
- Article
9
Specific features of intrinsic photoconductivity spectra of copper-compensated indium phosphide.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 528, doi. 10.1134/S1063782608050072
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- Publication type:
- Article
10
Study of the properties of the surface of gallium arsenide by scanning atomic force microscopy.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 531, doi. 10.1134/S1063782608050084
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- Publication type:
- Article
11
Extrinsic conductivity of Hg<sub>3</sub>In<sub>2</sub>Te<sub>6</sub> single crystals.
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- Semiconductors, 2008, v. 42, n. 5, p. 514, doi. 10.1134/S1063782608050047
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- Publication type:
- Article
12
Theoretical study of auger recombination processes in deep quantum wells.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 550, doi. 10.1134/S1063782608050114
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- Publication type:
- Article
13
Critical thickness for the Stranski-Krastanov transition treated with the effect of segregation.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 563, doi. 10.1134/S1063782608050138
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- Publication type:
- Article
14
High-frequency properties of double-well nanostructures.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 571, doi. 10.1134/S106378260805014X
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- Publication type:
- Article
15
Enhancement of photoluminescence of structures with nanocrystalline silicon stimulated by low-dose irradiation with γ-ray photons.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 576, doi. 10.1134/S1063782608050151
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- Publication type:
- Article
16
Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 580, doi. 10.1134/S1063782608050163
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- Publication type:
- Article
17
Nature of damped current oscillations in the formation of a static acoustoelectric domain in a n-InGaAs/GaAs quantum-well heterostructure.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 589, doi. 10.1134/S1063782608050175
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- Publication type:
- Article
18
Electron diffraction studies of short-range order parameters in amorphous Yb<sub>1− x </sub>Sm<sub> x </sub>As<sub>2</sub>S<sub>4</sub> films.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 593, doi. 10.1134/S1063782608050187
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- Publication type:
- Article
19
Thermal instability of silicon fullerenes stabilized with hydrogen: Computer simulation.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 596, doi. 10.1134/S1063782608050199
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- Publication type:
- Article
20
Intrinsic luminescence of Tb in metal-polymer complexes of polyamide acids.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 604, doi. 10.1134/S1063782608050205
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- Publication type:
- Article
21
A cascade laser on shallow-donor transitions in δ-Doped GaAs/AlGaAs superlattices.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 608, doi. 10.1134/S1063782608050217
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- Publication type:
- Article
22
Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy.
- Published in:
- Semiconductors, 2008, v. 42, n. 5, p. 616, doi. 10.1134/S1063782608050229
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- Publication type:
- Article