Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 4
Results: 23
Vladimir Ivanovich Ivanov-Omskiĭ (Dedicated to his 75th birthday).
- Published in:
- Semiconductors, 2008, v. 42, n. 4, p. 495, doi. 10.1134/S1063782608040234
- Publication type:
- Article
Diagnostics of low-barrier Schottky diodes with near-surface δ-doping.
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- Semiconductors, 2008, v. 42, n. 4, p. 490, doi. 10.1134/S1063782608040210
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- Article
Zakhariĭ Fishelevich Krasil’nik (Dedicated to his 60th birthday).
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- Semiconductors, 2008, v. 42, n. 4, p. 493, doi. 10.1134/S1063782608040222
- Publication type:
- Article
Properties of zinc oxide films synthesized in low-temperature plasma discharge under conditions of bombardment with plasma components.
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- Semiconductors, 2008, v. 42, n. 4, p. 486, doi. 10.1134/S1063782608040209
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- Article
Optical and electron spectroscopy study of initial stages of room-temperature Mg film growth on Si (111).
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- Semiconductors, 2008, v. 42, n. 4, p. 475, doi. 10.1134/S1063782608040180
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- Article
Nonlinear-optical frequency conversion in a dual-wavelength vertical-external-cavity surface-emitting laser.
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- Semiconductors, 2008, v. 42, n. 4, p. 463, doi. 10.1134/S1063782608040167
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- Article
Thermal-resistant TiB<sub> x </sub>- n-GaP Schottky diodes.
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- Semiconductors, 2008, v. 42, n. 4, p. 453, doi. 10.1134/S1063782608040143
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- Article
Dynamics of formation of photoresponse in a detector structure made of gallium arsenide.
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- Semiconductors, 2008, v. 42, n. 4, p. 443, doi. 10.1134/S106378260804012X
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- Article
Effect of transverse magnetic field on the behavior of longitudinal autosolitons in p-InSb.
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- Semiconductors, 2008, v. 42, n. 4, p. 383, doi. 10.1134/S1063782608040039
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- Article
Special features of optical and photoelectric properties of nominally undoped and Cu-doped CdS single crystals.
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- Semiconductors, 2008, v. 42, n. 4, p. 389, doi. 10.1134/S1063782608040040
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- Article
Effect of fluctuations on electron and phonon processes and thermodynamic parameters of Ag<sub>2</sub>Te and Ag<sub>2</sub>Se in the region of phase transition.
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- Semiconductors, 2008, v. 42, n. 4, p. 394, doi. 10.1134/S1063782608040052
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- Article
Magnetic susceptibility of Bi<sub>2</sub>Te<sub>3</sub>-Sb<sub>2</sub>Te<sub>3</sub> alloys.
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- Semiconductors, 2008, v. 42, n. 4, p. 401, doi. 10.1134/S1063782608040064
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- Publication type:
- Article
Effect of conditions of deposition and annealing of indium oxide films doped with fluorine (IFO) on the photovoltaic properties of the IFO/ p-Si heterojunction.
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- Semiconductors, 2008, v. 42, n. 4, p. 406, doi. 10.1134/S1063782608040076
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- Article
Native oxide emerging of the cleavage surface of gallium selenide due to prolonged storage.
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- Semiconductors, 2008, v. 42, n. 4, p. 414, doi. 10.1134/S1063782608040088
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- Publication type:
- Article
Low-temperature anomalies of the photoelectromagnetic effect in p-Cd<sub> x </sub>Hg<sub>1 − x </sub>Te due to recharging of surface states.
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- Semiconductors, 2008, v. 42, n. 4, p. 422, doi. 10.1134/S106378260804009X
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- Article
Emission spectra of InGaN/AlGaN/GaN quantum well heterostructures: Model of the two-dimensional joint density of states.
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- Semiconductors, 2008, v. 42, n. 4, p. 429, doi. 10.1134/S1063782608040106
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- Article
Effect of temperature and illumination intensity on the formation of metastable states in a-Si:H.
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- Semiconductors, 2008, v. 42, n. 4, p. 439, doi. 10.1134/S1063782608040118
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- Publication type:
- Article
Development of photodetectors for image converters: Doping of silicon with selenium from the gas phase.
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- Semiconductors, 2008, v. 42, n. 4, p. 448, doi. 10.1134/S1063782608040131
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- Article
Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1–4.8 μm spectral range.
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- Semiconductors, 2008, v. 42, n. 4, p. 458, doi. 10.1134/S1063782608040155
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- Article
Boundary effect in electrochemical etching of silicon.
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- Semiconductors, 2008, v. 42, n. 4, p. 470, doi. 10.1134/S1063782608040179
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- Article
Laser-stimulated modification of the impurity energy spectrum of gallium selenide intercalated with cobalt.
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- Semiconductors, 2008, v. 42, n. 4, p. 375, doi. 10.1134/S1063782608040015
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- Publication type:
- Article
Determination of the energy and concentration of amphoteric defects by differential processing of the temperature dependence of the concentration of free charge carriers.
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- Semiconductors, 2008, v. 42, n. 4, p. 379, doi. 10.1134/S1063782608040027
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- Article
Kinetics of resistive response of SnO<sub>2 − x </sub> thin films in gas environment.
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- Semiconductors, 2008, v. 42, n. 4, p. 481, doi. 10.1134/S1063782608040192
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- Article