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Results: 24

Effect of the state of vacancy equilibrium on diffusion of chromium impurity in gallium arsenide.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 370, doi. 10.1134/S106378260803024X
By:
- Khludkov, S. S.
Publication type:
Article
Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 354, doi. 10.1134/S1063782608030214
By:
- Biryukov, A. A.;
- Zvonkov, B. N.;
- Nekorkin, S. M.;
- Aleshkin, V. Ya.;
- Dubinov, A. A.;
- Kocharovskiĭ, V. V.;
- Kocharovskiĭ, Vl. V.
Publication type:
Article
Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 346, doi. 10.1134/S1063782608030196
By:
- Tsai, J. H.;
- Liu, W. Ch.;
- Guo, D. F.;
- Kang, Y. Ch.;
- Chiu, Sh. Y.;
- Lour, W. Sh.
Publication type:
Article
Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 334, doi. 10.1134/S1063782608030172
By:
- Gaman, V. I.;
- Balyuba, V. I.;
- Gritsyk, V. Yu.;
- Davydova, T. a.;
- Kalygina, V. M.
Publication type:
Article
Platinum nanoclusters encapsulated in amorphous carbon.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 325, doi. 10.1134/S1063782608030159
By:
- Zvonareva, T. K.;
- Sitnikova, A. A.;
- Frolova, G. S.;
- Ivanov-Omskiĭ, V. I.
Publication type:
Article
Polarization-resolved photoluminescence piezospectroscopy of GaAs/Al0.35Ga0.65As:Be quantum wells.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 316, doi. 10.1134/S1063782608030135
By:
- Averkiev, N. S.;
- Ivanov, Yu. L.;
- Krasivichev, A. A.;
- Petrov, P. V.;
- Sablina, N. I.;
- Sedov, V. E.
Publication type:
Article
Effect of iodine impurity on relaxation of photoexcited silver chloride.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 272, doi. 10.1134/S1063782608030056
By:
- Vostrikova, Yu. V.;
- Klyuev, V. G.
Publication type:
Article
Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 298, doi. 10.1134/S106378260803010X
By:
- Drozdov, M. N.;
- Vostokov, N. V.;
- Danil'tsev, V. M.;
- Drozdov, Yu. N.;
- Moldavskaya, L. D.;
- Murel', A. V.;
- Shashkin, V. I.
Publication type:
Article
Features of manifestation of acceptor state of gold in silicon with quenched-in donors.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 266, doi. 10.1134/S1063782608030044
By:
- Kiryukhin, A. D.;
- Grigor'ev, V. V.;
- Zuev, A. V.;
- Zuev, V. V.
Publication type:
Article
Effect of ultrasonic treatment on photoelectric and luminescent properties of ZnSe crystals.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 277, doi. 10.1134/S1063782608030068
By:
- Zobov, E. M.;
- Zobov, M. E.;
- Gabibov, F. S.;
- Kamilov, I. K.;
- Manyakhin, F. I.;
- Naimi, E. K.
Publication type:
Article
Comparative analysis of photoluminescence and electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) island.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 286, doi. 10.1134/S1063782608030081
By:
- Drozdov, Yu. N.;
- Krasilnik, Z. F.;
- Kudryavtsev, K. E.;
- Lobanov, D. N.;
- Novikov, A. V.;
- Shaleev, M. V.;
- Shengurov, D. V.;
- Shmagin, V. B.;
- Yablonskiy, A. N.
Publication type:
Article
The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 291, doi. 10.1134/S1063782608030093
By:
- Shkolnik, A. S.;
- Savelyev, A. V.;
- Karachinsky, L. Ya.;
- Gordeev, N. Yu.;
- Seisyan, R. P.;
- Zegrya, G. G.;
- Pellegrini, S.;
- Buller, G. S.;
- Evtikhiev, V. P.
Publication type:
Article
Wannier-stark effect in Ge/Si quantum dot superlattices.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 305, doi. 10.1134/S1063782608030111
By:
- Sobolev, M. M.;
- Cirlin, G. É.;
- Tonkikh, A. A.;
- Zakharov, N. D.
Publication type:
Article
Optical orientation of holes in strained nanostructures.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 310, doi. 10.1134/S1063782608030123
By:
- Averkiev, N. S.;
- Sablina, N. I.
Publication type:
Article
Effect of melting on the acoustic response of CdTe and GaAs subjected to the pulsed laser irradiation.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 281, doi. 10.1134/S106378260803007X
By:
- Baidullaeva, A.;
- Veleshchuk, V. P.;
- Vlasenko, A. I.;
- Dauletmuratov, B. K.;
- Lyashenko, O. V.;
- Mozol', P. E.
Publication type:
Article
Photoluminescence in semiconductor structures based on butyl-substituted erbium phthalocyanine complexes.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 321, doi. 10.1134/S1063782608030147
By:
- Belogorokhov, I. A.;
- Ryabchikov, Yu. V.;
- Tikhonov, E. V.;
- Pushkarev, V. E.;
- Breusova, M. O.;
- Tomilova, L. G.;
- Khokhlov, D. R.
Publication type:
Article
Silicon light-emitting diodes with strong near-band-edge luminescence.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 329, doi. 10.1134/S1063782608030160
By:
- Emel'yanov, A. M.;
- Sobolev, N. A.
Publication type:
Article
Mechanisms of rectification of a high-frequency signal by a field-effect heterotransistor with a short channel.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 339, doi. 10.1134/S1063782608030184
By:
- Orlov, M. L.
Publication type:
Article
High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 350, doi. 10.1007/s11453-008-3020-7
By:
- Bezotosnyĭ, V. V.;
- Vasil’eva, V. V.;
- Vinokurov, D. A.;
- Kapitonov, V. A.;
- Krokhin, O. N.;
- Leshko, A. Yu.;
- Lyutetskiĭ, A. V.;
- Murashova, A. V.;
- Nalet, T. A.;
- Nikolaev, D. N.;
- Pikhtin, N. A.;
- Popov, Yu. M.;
- Slipchenko, S. O.;
- Stankevich, A. L.;
- Fetisova, N. V.;
- Shamakhov, V. V.;
- Tarasov, I. S.
Publication type:
Article
Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y2O2S:Er,Yb luminophor.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 358, doi. 10.1134/S1063782608030226
By:
- Gruzintsev, A. N.;
- Barthou, C.;
- Benalloul, P.
Publication type:
Article
Effect of electron and proton irradiation on characteristics of SiC surface-barrier detectors of nuclear radiation.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 363, doi. 10.1134/S1063782608030238
By:
- Ivanov, A. M.;
- Strokan, N. B.;
- Kozlovskiĭ, V. V.;
- Lebedev, A. A.
Publication type:
Article
On the modes of evaporation of Si and dopants in vacuum epitaxy procedures.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 251, doi. 10.1134/S1063782608030019
By:
- Kuznetsov, V. P.;
- Alyabina, N. A.;
- Bozhenkin, V. A.;
- Belova, O. V.;
- Kuznetsov, M. V.
Publication type:
Article
Simulation of near-surface proton-stimulated diffusion of boron in silicon.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 257, doi. 10.1134/S1063782608030020
By:
- Aleksandrov, O. V.;
- Kozlovski, V. V.
Publication type:
Article
Electrical properties of FeIn2Se4 layered single crystals for alternating current.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 263, doi. 10.1134/S1063782608030032
By:
- Niftiev, N. N.;
- Tagiev, O. B.;
- Muradov, M. B.
Publication type:
Article

Effect of the state of vacancy equilibrium on diffusion of chromium impurity in gallium arsenide.

Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser.

Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor.

Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode.

Platinum nanoclusters encapsulated in amorphous carbon.

Polarization-resolved photoluminescence piezospectroscopy of GaAs/Al<sub>0.35</sub>Ga<sub>0.65</sub>As:Be quantum wells.

Effect of iodine impurity on relaxation of photoexcited silver chloride.

Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer.

Features of manifestation of acceptor state of gold in silicon with quenched-in donors.

Effect of ultrasonic treatment on photoelectric and luminescent properties of ZnSe crystals.

Comparative analysis of photoluminescence and electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) island.

The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots.

Wannier-stark effect in Ge/Si quantum dot superlattices.

Optical orientation of holes in strained nanostructures.

Effect of melting on the acoustic response of CdTe and GaAs subjected to the pulsed laser irradiation.

Photoluminescence in semiconductor structures based on butyl-substituted erbium phthalocyanine complexes.

Silicon light-emitting diodes with strong near-band-edge luminescence.

Mechanisms of rectification of a high-frequency signal by a field-effect heterotransistor with a short channel.

High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide.

Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y<sub>2</sub>O<sub>2</sub>S:Er,Yb luminophor.

Effect of electron and proton irradiation on characteristics of SiC surface-barrier detectors of nuclear radiation.

On the modes of evaporation of Si and dopants in vacuum epitaxy procedures.

Simulation of near-surface proton-stimulated diffusion of boron in silicon.

Electrical properties of FeIn<sub>2</sub>Se<sub>4</sub> layered single crystals for alternating current.