Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 2

Results: 23

Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 228, doi. 10.1134/S1063782608020206

By:

Astakhova, A.;
Bez”yazychnaya, T.;
Burov, L.;
Gorbatsevich, A.;
Ryabtsev, A.;
Ryabtsev, G.;
Shchemelev, M.;
Yakovlev, Yu.

Publication type:

Article

High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 211, doi. 10.1134/S1063782608020176

By:

Grekhov, I.;
Ivanov, P.;
Il’inskaya, N.;
Kon’kov, O.;
Potapov, A.;
Samsonova, T.

Publication type:

Article

Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 215, doi. 10.1134/S1063782608020188

By:

Frantsuzov, A.;
Boyarkina, N.;
Popov, V.

Publication type:

Article

Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4 H modification.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 242, doi. 10.1007/s11453-008-2023-8

By:

Kozlovskiĭ, V.;
Emtsev, V.;
Emtsev, K.;
Strokan, N.;
Ivanov, A.;
Lomasov, V.;
Oganesyan, G.;
Lebedev, A.

Publication type:

Article

Effect of hydrogen on anisotropy of the p-GaN growth rate in the case of side-wall MOCVD.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 232, doi. 10.1134/S1063782608020218

By:

Lundin, W.;
Nikolaev, A.;
Sakharov, A.;
Tsatsul’nikov, A.

Publication type:

Article

Diffusion of chromium into epitaxial gallium arsenide.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 238, doi. 10.1134/S106378260802022X

By:

Vilisova, M.;
Drugova, E.;
Ponomarev, I.;
Chubirko, V.

Publication type:

Article

Some aspects of selection of impurities improving photoelectric characteristics of chalcogenide vitreous semiconductors.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 208, doi. 10.1134/S1063782608020164

By:

Burdiyan, I.;
Cosiuc, V.;
Pynzar’, R.

Publication type:

Article

Study of the conductance of ultrathin tin diphthalocyanine films.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 199, doi. 10.1134/S1063782608020140

By:

Levshin, N.;
Pronin, N.;
Forsh, P.;
Yudin, S.

Publication type:

Article

Photoconductivity of thin a-Si:H films.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 192, doi. 10.1007/s11453-008-2012-y

By:

Kazanskiĭ, A.;
Koshelev, O.;
Sazonov, A.;
Khomich, A.

Publication type:

Article

Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 137, doi. 10.1134/S1063782608020036

By:

Belova, O.;
Shabanov, V.;
Kasatkin, A.;
Kuznetsov, O.;
Yablonskiĭ, A.;
Kuznetsov, M.;
Kuznetsov, V.;
Kornaukhov, A.;
Andreev, B.;
Krasil’nik, Z.

Publication type:

Article

Bistable amphoteric centers in semiconductors.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 142, doi. 10.1134/S1063782608020048

By:

Nikitina, A.;
Zuev, V.

Publication type:

Article

Photosensitivity of Pb1 − x Sn x Te:In films in the region of intrinsic absorption.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 149, doi. 10.1134/S106378260802005X

By:

Klimov, A.;
Shumskiĭ, V.

Publication type:

Article

Optical properties of AgGa x In1 − x Se2 alloys.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 156, doi. 10.1007/s11453-008-2006-9

By:

Bodnar’, I.

Publication type:

Article

Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 159, doi. 10.1134/S1063782608020073

By:

Mezdrogina, M.;
Krivolapchuk, V.;
Kozhanova, Yu.

Publication type:

Article

Ionization of the sulfur-related DX Center in In 1 − x Ga x P in an electric field.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 173, doi. 10.1134/S1063782608020085

By:

Krutogolov, Yu.

Publication type:

Article

Stimulated radiation of optically pumped Cd x Hg1 − x Te-Based heterostructures at room temperature.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 179, doi. 10.1134/S1063782608020097

By:

Andronov, A.;
Nozdrin, Yu.;
Okomel’kov, A.;
Babenko, A.;
Varavin, V.;
Ikusov, D.;
Smirnov, R.

Publication type:

Article

Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 183, doi. 10.1134/S1063782608020103

By:

Kachurin, G.;
Cherkova, S.;
Volodin, V.;
Marin, D.;
Deutschmann, M.

Publication type:

Article

Photoluminescence of localized excitons in InGan quantum dots.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 188, doi. 10.1134/S1063782608020115

By:

Usov, S.;
Tsatsul’nikov, A.;
Lundin, V.;
Sakharov, A.;
Zavarin, E.;
Ledentsov, N.

Publication type:

Article

Effect of Auger recombination on the thermal stability of high-voltage high-power semiconductor diodes.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 220, doi. 10.1134/S106378260802019X

By:

Mnatsakanov, T.;
Levinshteĭn, M.;
Freĭdlin, A.

Publication type:

Article

Phase composition of films in a Bi-S system and formation of Bi2S3 films with different substructures.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 129, doi. 10.1134/S1063782608020012

By:

Akhmedov, G.

Publication type:

Article

Role of background O and Cu impurities in the optics of ZnSe crystals in the context of the band anticrossing model.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 131, doi. 10.1134/S1063782608020024

By:

Morozova, N.;
Mideros, D.;
Gavrishchuk, E.;
Galstyan, V.

Publication type:

Article

Optical studies of AlN/ n-Si(100) films obtained by the method of high-frequency magnetron sputtering.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 195, doi. 10.1134/S1063782608020139

By:

Zayats, N.;
Boĭko, V.;
Gentsar, P.;
Litvin, O.;
Papusha, V.;
Sopinskiĭ, N.

Publication type:

Article

Variation in optical-absorption edge in SiN x layers with silicon clusters.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 202, doi. 10.1134/S1063782608020152

By:

Efremov, M.;
Volodin, V.;
Marin, D.;
Arzhannikova, S.;
Kamaev, G.;
Kochubeĭ, S.;
Popov, A.

Publication type:

Article

Works matching IS 10637826 AND DT 2008 AND VI 42 AND IP 2

Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure.

High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction.

Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased.

Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4 H modification.

Effect of hydrogen on anisotropy of the p-GaN growth rate in the case of side-wall MOCVD.

Diffusion of chromium into epitaxial gallium arsenide.

Some aspects of selection of impurities improving photoelectric characteristics of chalcogenide vitreous semiconductors.

Study of the conductance of ultrathin tin diphthalocyanine films.

Photoconductivity of thin a-Si:H films.

Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy.

Bistable amphoteric centers in semiconductors.

Photosensitivity of Pb<sub>1 − x </sub>Sn<sub> x </sub>Te:In films in the region of intrinsic absorption.

Optical properties of AgGa<sub> x </sub>In<sub>1 − x </sub>Se<sub>2</sub> alloys.

Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities.

Ionization of the sulfur-related DX Center in In <sub>1 − x </sub> Ga <sub> x </sub> P in an electric field.

Stimulated radiation of optically pumped Cd <sub> x </sub>Hg<sub>1 − x </sub> Te-Based heterostructures at room temperature.

Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures.

Photoluminescence of localized excitons in InGan quantum dots.

Effect of Auger recombination on the thermal stability of high-voltage high-power semiconductor diodes.

Phase composition of films in a Bi-S system and formation of Bi<sub>2</sub>S<sub>3</sub> films with different substructures.

Role of background O and Cu impurities in the optics of ZnSe crystals in the context of the band anticrossing model.

Optical studies of AlN/ n-Si(100) films obtained by the method of high-frequency magnetron sputtering.

Variation in optical-absorption edge in SiN<sub> x </sub> layers with silicon clusters.