Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 12

Results: 14

Formation of an interphase boundary under highly nonequilibrium conditions.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1457, doi. 10.1134/S1063782607120147
By:
- Belyaev, A.;
- Rubets, V.;
- Antipov, V.
Publication type:
Article
An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1439, doi. 10.1134/S1063782607120111
By:
- Požela, Yu.;
- Požela, K.;
- Jucienė, V.;
- Balakauskas, S.;
- Evtikhiev, V.;
- Schkolnik, A.;
- Storasta, Yu.;
- Mekys, A.
Publication type:
Article
Modulation optical spectroscopy of excitons in structures with GaAs multiple quantum wells separated by tunneling-nontransparent barriers.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1434, doi. 10.1134/S106378260712010X
By:
- Chaldyshev, V.;
- Shkol’nik, A.;
- Evtikhiev, V.;
- Holden, T.
Publication type:
Article
The energy structure of quantum dots induced in quantum wells by a nonuniform electric field.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1422, doi. 10.1134/S1063782607120081
By:
- Nikolyuk, V.;
- Ignatiev, I.
Publication type:
Article
Two-electron germanium centers with a negative correlation energy in lead chalcogenides.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1413, doi. 10.1134/S1063782607120068
By:
- Terukov, E.;
- Marchenko, A.;
- Zaĭtseva, A.;
- Seregin, P.
Publication type:
Article
Kinetics of polarization current in a Pb3O4 wide-gap photoconductor.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1405, doi. 10.1134/S1063782607120044
By:
- Avanesyan, V.;
- Bordovskii, V.;
- Baranova, E.;
- Grabko, G.
Publication type:
Article
Specific optical and photoelectric properties of thin CuIn3Se5 films synthesized by laser deposition.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1394, doi. 10.1134/S1063782607120020
By:
- Borisov, E.;
- Vertsimakha, Ya.;
- Lutsik, P.;
- Tver’yanovich, A.;
- Tver’yanovich, Yu.
Publication type:
Article
Isothermal polarization in thin-film Al-As2Se3-Al metal-dielectric-metal structures.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1419, doi. 10.1134/S106378260712007X
By:
- Avanesyan, V.;
- Grabko, G.
Publication type:
Article
Special properties of X-ray diffraction on carbon onions.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1430, doi. 10.1134/S1063782607120093
By:
- Yastrebov, S.;
- Ivanov-Omskii, V.
Publication type:
Article
Structural systematic features of photoelectric effect in aromatic polymers with polymethine dyes.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1445, doi. 10.1134/S1063782607120123
By:
- Aleksandrova, E.
Publication type:
Article
Role of singlet oxygen in formation of nanoporous silicon.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1453, doi. 10.1134/S1063782607120135
By:
- Belyakov, L.;
- Goryachev, D.;
- Sreseli, O.
Publication type:
Article
Domain formation during syntaxy of polytypes of silicon carbide.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1389, doi. 10.1134/S1063782607120019
By:
- Avrov, D.;
- Dorozhkin, S.;
- Lebedev, A.;
- Tairov, Yu.
Publication type:
Article
Participation of electron-phonon interaction in the ultrafast self-modulation of absorption of light in GaAs. Relation of modulation of absorption with the spectrum of stimulated radiation in GaAs.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1398, doi. 10.1134/S1063782607120032
By:
- Ageeva, N.;
- Bronevoi, I.;
- Krivonosov, A.;
- Nalet, T.;
- Stegantsov, S.
Publication type:
Article
Thermal stability and radiation resistance of tin valent states in the structure of the (As2Se3)1 − z (SnSe) z − x (GeSe) x semiconductor glasses.
Published in:
Semiconductors, 2007, v. 41, n. 12, p. 1408, doi. 10.1134/S1063782607120056
By:
- Bordovskii, G.;
- Kastro, R.;
- Marchenko, A.;
- Nemov, S.;
- Seregin, P.
Publication type:
Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 12

Formation of an interphase boundary under highly nonequilibrium conditions.

An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well.

Modulation optical spectroscopy of excitons in structures with GaAs multiple quantum wells separated by tunneling-nontransparent barriers.

The energy structure of quantum dots induced in quantum wells by a nonuniform electric field.

Two-electron germanium centers with a negative correlation energy in lead chalcogenides.

Kinetics of polarization current in a Pb<sub>3</sub>O<sub>4</sub> wide-gap photoconductor.

Specific optical and photoelectric properties of thin CuIn<sub>3</sub>Se<sub>5</sub> films synthesized by laser deposition.

Isothermal polarization in thin-film Al-As<sub>2</sub>Se<sub>3</sub>-Al metal-dielectric-metal structures.

Special properties of X-ray diffraction on carbon onions.

Structural systematic features of photoelectric effect in aromatic polymers with polymethine dyes.

Role of singlet oxygen in formation of nanoporous silicon.

Domain formation during syntaxy of polytypes of silicon carbide.

Participation of electron-phonon interaction in the ultrafast self-modulation of absorption of light in GaAs. Relation of modulation of absorption with the spectrum of stimulated radiation in GaAs.

Thermal stability and radiation resistance of tin valent states in the structure of the (As<sub>2</sub>Se<sub>3</sub>)<sub>1 − z </sub>(SnSe)<sub> z − x </sub>(GeSe)<sub> x </sub> semiconductor glasses.