Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 12

Results: 14

Kinetics of polarization current in a Pb3O4 wide-gap photoconductor.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1405, doi. 10.1134/S1063782607120044

By:

Avanesyan, V.;
Bordovskii, V.;
Baranova, E.;
Grabko, G.

Publication type:

Article

Two-electron germanium centers with a negative correlation energy in lead chalcogenides.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1413, doi. 10.1134/S1063782607120068

By:

Terukov, E.;
Marchenko, A.;
Zaĭtseva, A.;
Seregin, P.

Publication type:

Article

Formation of an interphase boundary under highly nonequilibrium conditions.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1457, doi. 10.1134/S1063782607120147

By:

Belyaev, A.;
Rubets, V.;
Antipov, V.

Publication type:

Article

An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1439, doi. 10.1134/S1063782607120111

By:

Požela, Yu.;
Požela, K.;
Jucienė, V.;
Balakauskas, S.;
Evtikhiev, V.;
Schkolnik, A.;
Storasta, Yu.;
Mekys, A.

Publication type:

Article

Modulation optical spectroscopy of excitons in structures with GaAs multiple quantum wells separated by tunneling-nontransparent barriers.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1434, doi. 10.1134/S106378260712010X

By:

Chaldyshev, V.;
Shkol’nik, A.;
Evtikhiev, V.;
Holden, T.

Publication type:

Article

The energy structure of quantum dots induced in quantum wells by a nonuniform electric field.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1422, doi. 10.1134/S1063782607120081

By:

Nikolyuk, V.;
Ignatiev, I.

Publication type:

Article

Specific optical and photoelectric properties of thin CuIn3Se5 films synthesized by laser deposition.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1394, doi. 10.1134/S1063782607120020

By:

Borisov, E.;
Vertsimakha, Ya.;
Lutsik, P.;
Tver’yanovich, A.;
Tver’yanovich, Yu.

Publication type:

Article

Isothermal polarization in thin-film Al-As2Se3-Al metal-dielectric-metal structures.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1419, doi. 10.1134/S106378260712007X

By:

Avanesyan, V.;
Grabko, G.

Publication type:

Article

Special properties of X-ray diffraction on carbon onions.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1430, doi. 10.1134/S1063782607120093

By:

Yastrebov, S.;
Ivanov-Omskii, V.

Publication type:

Article

Structural systematic features of photoelectric effect in aromatic polymers with polymethine dyes.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1445, doi. 10.1134/S1063782607120123

By:

Aleksandrova, E.

Publication type:

Article

Role of singlet oxygen in formation of nanoporous silicon.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1453, doi. 10.1134/S1063782607120135

By:

Belyakov, L.;
Goryachev, D.;
Sreseli, O.

Publication type:

Article

Participation of electron-phonon interaction in the ultrafast self-modulation of absorption of light in GaAs. Relation of modulation of absorption with the spectrum of stimulated radiation in GaAs.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1398, doi. 10.1134/S1063782607120032

By:

Ageeva, N.;
Bronevoi, I.;
Krivonosov, A.;
Nalet, T.;
Stegantsov, S.

Publication type:

Article

Domain formation during syntaxy of polytypes of silicon carbide.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1389, doi. 10.1134/S1063782607120019

By:

Avrov, D.;
Dorozhkin, S.;
Lebedev, A.;
Tairov, Yu.

Publication type:

Article

Thermal stability and radiation resistance of tin valent states in the structure of the (As2Se3)1 − z (SnSe) z − x (GeSe) x semiconductor glasses.

Published in:

Semiconductors, 2007, v. 41, n. 12, p. 1408, doi. 10.1134/S1063782607120056

By:

Bordovskii, G.;
Kastro, R.;
Marchenko, A.;
Nemov, S.;
Seregin, P.

Publication type:

Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 12

Kinetics of polarization current in a Pb<sub>3</sub>O<sub>4</sub> wide-gap photoconductor.

Two-electron germanium centers with a negative correlation energy in lead chalcogenides.

Formation of an interphase boundary under highly nonequilibrium conditions.

An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well.

Modulation optical spectroscopy of excitons in structures with GaAs multiple quantum wells separated by tunneling-nontransparent barriers.

The energy structure of quantum dots induced in quantum wells by a nonuniform electric field.

Specific optical and photoelectric properties of thin CuIn<sub>3</sub>Se<sub>5</sub> films synthesized by laser deposition.

Isothermal polarization in thin-film Al-As<sub>2</sub>Se<sub>3</sub>-Al metal-dielectric-metal structures.

Special properties of X-ray diffraction on carbon onions.

Structural systematic features of photoelectric effect in aromatic polymers with polymethine dyes.

Role of singlet oxygen in formation of nanoporous silicon.

Participation of electron-phonon interaction in the ultrafast self-modulation of absorption of light in GaAs. Relation of modulation of absorption with the spectrum of stimulated radiation in GaAs.

Domain formation during syntaxy of polytypes of silicon carbide.

Thermal stability and radiation resistance of tin valent states in the structure of the (As<sub>2</sub>Se<sub>3</sub>)<sub>1 − z </sub>(SnSe)<sub> z − x </sub>(GeSe)<sub> x </sub> semiconductor glasses.