Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 11

Results: 20

Integer quantum Hall effect and correlated disorder.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1329, doi. 10.1134/S1063782607110103

By:

Greshnov, A. A.;
Zegrya, G. G.

Publication type:

Article

Production of quantum dots by selective interdiffusion in CdTe/CdMgTe quantum wells.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1339, doi. 10.1134/S1063782607110127

By:

Zaitsev, S. V.;
Welsch, M. K.;
Forchel, A.;
Bacher, G.

Publication type:

Article

CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1345, doi. 10.1134/S1063782607110139

By:

Sedova, I. V.;
Lyublinskaya, O. G.;
Sorokin, S. V.;
Sitnikova, A. A.;
Toropov, A. A.;
Donatini, F.;
Le Si Dang;
Ivanov, S. V.

Publication type:

Article

Specific features of dissipation of electronic excitation energy in coupled molecular solid systems based on silicon nanocrystals on intense optical pumping.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1351, doi. 10.1134/S1063782607110140

By:

Palenov, D. A.;
Zhigunov, D. M.;
Shalygina, O. A.;
Kashkarov, P. K.;
Timoshenko, V. Yu.

Publication type:

Article

Specific features of dynamic injection and base layer modulation processes in power n +- p- p + diodes.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1381, doi. 10.1134/S1063782607110206

By:

Mnatsakanov, T. T.;
Levinshtein, M. E.;
Tandoev, A. G.;
Yurkov, S. N.

Publication type:

Article

Mechanisms of current flow in metal-semiconductor ohmic contacts.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1263, doi. 10.1134/S1063782607110012

By:

Blank, T. V.;
Gol'dberg, Yu. A.

Publication type:

Article

Large-magnitude spin polarization of electrons in an InAs-based diode structure.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1293, doi. 10.1134/S1063782607110024

By:

Terent'ev, Ya. V.;
Lyublinskaya, O. G.;
Usikova, A. A.;
Toropov, A. A.;
Solov'ev, V. A.;
Ivanov, S. V.

Publication type:

Article

Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1300, doi. 10.1134/S1063782607110048

By:

Poklonski, N. A.;
Vyrko, S. A.;
Zabrodskii, A. G.

Publication type:

Article

Cathodoluminescence from dilute GaN x As1− x solutions ( x ≤ 0.03).

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1297, doi. 10.1134/S1063782607110036

By:

Brunkov, P. N.;
Gutkin, A. A.;
Zamoryanskaya, M. V.;
Khrustalev, V. S.

Publication type:

Article

Properties of CuIn3Se5 crystals and In/CuIn3Se5 structures.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1307, doi. 10.1134/S106378260711005X

By:

Bodnar', I. V.;
Rud', V. Yu;
Rud', Yu. V.

Publication type:

Article

Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1356, doi. 10.1134/S1063782607110152

By:

Shaleev, M. V.;
Novikov, A. V.;
Yablonskiĭ, A. N.;
Kuznetsov, O. A.;
Drozdov, Yu. N.;
Lobanov, D. N.;
Krasil'nik, Z. F.

Publication type:

Article

Barrier-height measurement for a gallium arsenide metal-semi-insulator interface.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1310, doi. 10.1134/S1063782607110061

By:

Ayzenshtat, G. I.;
Lelekov, M. A.;
Tolbanov, O. P.

Publication type:

Article

Erbium ion electroluminescence in p ++/ n +/ n-Si:Er/ n ++ silicon diode structures.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1312, doi. 10.1134/S1063782607110073

By:

Kuznetsov, V. P.;
Remizov, D. Yu.;
Shmagin, V. B.;
Kudryavtsev, K. E.;
Shabanov, V. N.;
Obolensky, S. V.;
Belova, O. V.;
Kuznetsov, M. V.;
Kornaukhov, A. V.;
Andreev, B. A.;
Krasil'nik, Z. F.

Publication type:

Article

Transport properties of two-dimensional hole gas in a Ge1− x Si x /Ge/Ge1− x Si x quantum well in the vicinity of metal-insulator transition.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1315, doi. 10.1134/S1063782607110085

By:

Arapov, Yu. G.;
Neverov, V. N.;
Harus, G. I.;
Shelushinina, N. G.;
Yakunin, M. V.;
Gudina, S. V.;
Karskanov, I. V.;
Kuznetsov, O. A.;
de Visser, A.;
Ponomarenko, L.

Publication type:

Article

Excition states in semiconductor quantum dots in the modified effective mass approximation.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1323, doi. 10.1134/S1063782607110097

By:

Pokutnyĭ, S. I.

Publication type:

Article

Capacitance studies of multilayer ensembles of InAs QDs in a GaAs matrix.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1335, doi. 10.1134/S1063782607110115

By:

Gutkin, A. A.;
Brunkov, P. N.;
Konnikov, S. G.

Publication type:

Article

Frequency shift in a system of two laser diodes.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1364, doi. 10.1134/S1063782607110176

By:

Biryukov, A. A.;
Zvonkov, B. N.;
Nekorkin, S. M.;
Aleshkin, V. Ya.;
Gavrilenko, V. I.;
Marem'yanin, K. V.;
Morozov, S. V.;
Kocharovskii, V. V.;
Kocharovskii, Vl. V.

Publication type:

Article

Properties of GaInAsSb/GaSb (λ = 1.8–2.3 μm) immersion lens photodiodes at 20–140°C.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1369, doi. 10.1134/S1063782607110188

By:

Karandashev, S. A.;
Matveev, B. A.;
Remennyi, M. A.;
Shlenskii, A. A.;
Lunin, L. S.;
Ratushnyi, V. I.;
Koryuk, A. V.;
Tarakanova, N. G.

Publication type:

Article

Two-band combined model of a resonant tunneling diode.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1375, doi. 10.1134/S106378260711019X

By:

Abramov, I. I.;
Goncharenko, I. A.;
Kolomeitseva, N. V.

Publication type:

Article

Raman scattering in semiconductor structures based on monophthalocyanine and triphthalocyanine molecules incorporating erbium ions.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1361, doi. 10.1134/S1063782607110164

By:

Belogorokhov, I. A.;
Tikhonov, E. V.;
Breusova, M. O.;
Pushkarev, V. E.;
Zoteev, A. V.;
Tomilova, L. G.;
Khokhlov, D. R.

Publication type:

Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 11

Integer quantum Hall effect and correlated disorder.

Production of quantum dots by selective interdiffusion in CdTe/CdMgTe quantum wells.

CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor.

Specific features of dissipation of electronic excitation energy in coupled molecular solid systems based on silicon nanocrystals on intense optical pumping.

Specific features of dynamic injection and base layer modulation processes in power n <sup>+</sup>- p- p <sup>+</sup> diodes.

Mechanisms of current flow in metal-semiconductor ohmic contacts.

Large-magnitude spin polarization of electrons in an InAs-based diode structure.

Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level.

Cathodoluminescence from dilute GaN<sub> x </sub>As<sub>1− x </sub> solutions ( x ≤ 0.03).

Properties of CuIn<sub>3</sub>Se<sub>5</sub> crystals and In/CuIn<sub>3</sub>Se<sub>5</sub> structures.

Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers.

Barrier-height measurement for a gallium arsenide metal-semi-insulator interface.

Erbium ion electroluminescence in p <sup>++</sup>/ n <sup>+</sup>/ n-Si:Er/ n <sup>++</sup> silicon diode structures.

Transport properties of two-dimensional hole gas in a Ge<sub>1− x </sub>Si<sub> x </sub>/Ge/Ge<sub>1− x </sub>Si<sub> x </sub> quantum well in the vicinity of metal-insulator transition.

Excition states in semiconductor quantum dots in the modified effective mass approximation.

Capacitance studies of multilayer ensembles of InAs QDs in a GaAs matrix.

Frequency shift in a system of two laser diodes.

Properties of GaInAsSb/GaSb (λ = 1.8–2.3 μm) immersion lens photodiodes at 20–140°C.

Two-band combined model of a resonant tunneling diode.

Raman scattering in semiconductor structures based on monophthalocyanine and triphthalocyanine molecules incorporating erbium ions.