Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 10
Results: 23
Specific features in the energy spectrum of the narrow-gap semiconductor bicrystals Bi<sub>1 − x </sub>Sb<sub> x </sub> (0.06 ≤ x ≤ 0.20).
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- Semiconductors, 2007, v. 41, n. 10, p. 1178, doi. 10.1134/S1063782607100090
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Photosensitivity of the structures on the Cu(In,Ga)(S,Se)<sub>2</sub> films obtained by thermal treatment in the S and Se vapors.
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- Semiconductors, 2007, v. 41, n. 10, p. 1173, doi. 10.1134/S1063782607100089
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Conduction mechanisms in silicon-polymer-metal heterostructures.
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- Semiconductors, 2007, v. 41, n. 10, p. 1165, doi. 10.1134/S1063782607100065
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Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy.
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- Semiconductors, 2007, v. 41, n. 10, p. 1145, doi. 10.1134/S106378260710003X
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Characteristics of tunneling and impact ionization in ZnS:Mn-based thin-film electroluminescent structures.
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- Semiconductors, 2007, v. 41, n. 10, p. 1150, doi. 10.1134/S1063782607100041
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Effect of slow electrons on the field dependences of the Hall coefficient for Cd<sub> x </sub>Hg<sub>1 − x </sub>Te alloys at T = 77 K.
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- Semiconductors, 2007, v. 41, n. 10, p. 1160, doi. 10.1134/S1063782607100053
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Fabrication and properties of point structures formed on n-InSe single crystals.
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- Semiconductors, 2007, v. 41, n. 10, p. 1170, doi. 10.1134/S1063782607100077
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Defects of the structure of semiconductor superlattices grown on the basis of II–VI alloys.
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- Semiconductors, 2007, v. 41, n. 10, p. 1255, doi. 10.1134/S1063782607100235
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Intensification of electroluminescence of ZnSe:(Te, O) crystals as a result of irradiation with γ-ray photons.
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- Semiconductors, 2007, v. 41, n. 10, p. 1135, doi. 10.1134/S1063782607100016
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Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data.
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- Semiconductors, 2007, v. 41, n. 10, p. 1181, doi. 10.1134/S1063782607100107
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Effect of energy band bending on non-steady-state Dember EMF in bipolar semiconductors.
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- Semiconductors, 2007, v. 41, n. 10, p. 1185, doi. 10.1134/S1063782607100119
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Anomalous dependences of the diode barrier capacitance on bias voltage and temperature.
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- Semiconductors, 2007, v. 41, n. 10, p. 1189, doi. 10.1134/S1063782607100120
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Experimental investigation of effect of aromatic hydrocarbons on resistivity of indium selenide.
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- Semiconductors, 2007, v. 41, n. 10, p. 1197, doi. 10.1134/S1063782607100132
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Relaxation of photodielectric effect in Pb<sub>3</sub>O<sub>4</sub> layers.
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- Semiconductors, 2007, v. 41, n. 10, p. 1201, doi. 10.1134/S1063782607100144
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Optical properties of organic semiconductors based on erbium phthalocyanine complexes in the mid- and near-infrared spectral regions.
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- Semiconductors, 2007, v. 41, n. 10, p. 1204, doi. 10.1134/S1063782607100156
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A multifrequency interband two-cascade laser.
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- Semiconductors, 2007, v. 41, n. 10, p. 1209, doi. 10.1134/S1063782607100168
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Comparative analysis of photoconversion efficiency in the Si solar cells under concentrated illumination for the standard and rear geometries of arrangement of contacts.
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- Semiconductors, 2007, v. 41, n. 10, p. 1214, doi. 10.1134/S106378260710017X
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The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots.
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- Semiconductors, 2007, v. 41, n. 10, p. 1224, doi. 10.1134/S1063782607100181
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Double-band generation in quantum-well semiconductor laser at high injection levels.
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- Semiconductors, 2007, v. 41, n. 10, p. 1230, doi. 10.1134/S1063782607100193
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Effect of copper doping on kinetic phenomena in n-Bi<sub>2</sub>Te<sub>2.85</sub>Se<sub>0.15</sub>.
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- Semiconductors, 2007, v. 41, n. 10, p. 1140, doi. 10.1134/S1063782607100028
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Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant.
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- Semiconductors, 2007, v. 41, n. 10, p. 1234, doi. 10.1134/S106378260710020X
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Nucleation at the lateral surface and the shape of whisker nanocrystals.
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- Semiconductors, 2007, v. 41, n. 10, p. 1240, doi. 10.1134/S1063782607100211
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Effect of chemical treatment on photoluminescence spectra of SiO<sub> x </sub> layers with built-in Si nanocrystals.
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- Semiconductors, 2007, v. 41, n. 10, p. 1248, doi. 10.1134/S1063782607100223
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