Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 10

Results: 23

Specific features in the energy spectrum of the narrow-gap semiconductor bicrystals Bi1 − x Sb x (0.06 ≤ x ≤ 0.20).

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1178, doi. 10.1134/S1063782607100090

By:

Georgitsé, A. E.;
Ivanov-Omskiǐ, V. I.;
Muntyanu, F. M.;
Karaman, M. I.;
Postolaki, I. T.

Publication type:

Article

Photosensitivity of the structures on the Cu(In,Ga)(S,Se)2 films obtained by thermal treatment in the S and Se vapors.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1173, doi. 10.1134/S1063782607100089

By:

Rud', V. Yu.;
Tivanov, M. S.;
Rud', Yu. V.;
Gremenok, V. F.;
Zaretskaya, E. P.;
Zalesskiǐ, V. B.;
Leonova, T. R.;
Romanov, P. I.

Publication type:

Article

Conduction mechanisms in silicon-polymer-metal heterostructures.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1165, doi. 10.1134/S1063782607100065

By:

Salikhov, R. B.;
Lachinov, A. N.;
Rakhmeev, R. G.

Publication type:

Article

Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1145, doi. 10.1134/S106378260710003X

By:

Parchinskiy, P. B.;
Bobylev, A. Yu.;
Vlasov, S. I.;
Fu Chen Yu;
Kim, Do Jin

Publication type:

Article

Effect of energy band bending on non-steady-state Dember EMF in bipolar semiconductors.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1185, doi. 10.1134/S1063782607100119

By:

Konin, A.

Publication type:

Article

Characteristics of tunneling and impact ionization in ZnS:Mn-based thin-film electroluminescent structures.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1150, doi. 10.1134/S1063782607100041

By:

Gurin, N. T.;
Sabitov, O. Yu.;
Afanas'ev, A. M.

Publication type:

Article

Fabrication and properties of point structures formed on n-InSe single crystals.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1170, doi. 10.1134/S1063782607100077

By:

Il'chuk, G. A.;
Kus'nézh, V. V.;
Petrus’, R. Yu.;
Rud', V. Yu.;
Rud’, Yu. V.;
Ukrainets, V. O.

Publication type:

Article

Defects of the structure of semiconductor superlattices grown on the basis of II–VI alloys.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1255, doi. 10.1134/S1063782607100235

By:

Kuznetsov, G. F.

Publication type:

Article

Intensification of electroluminescence of ZnSe:(Te, O) crystals as a result of irradiation with γ-ray photons.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1135, doi. 10.1134/S1063782607100016

By:

Él'murotova, D. B.;
Ibragimova, É. M.

Publication type:

Article

Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1181, doi. 10.1134/S1063782607100107

By:

Tyaginov, S. É;
Vexler, M. I.;
Grekhov, I. V.;
Zaporojtchenko, V.

Publication type:

Article

Effect of slow electrons on the field dependences of the Hall coefficient for Cd x Hg1 − x Te alloys at T = 77 K.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1160, doi. 10.1134/S1063782607100053

By:

Belov, A. G.;
Belova, I. M.;
Kanevskii, V. E.;
Sviridov, M. S.;
Shlenskiǐ, A. A.

Publication type:

Article

Anomalous dependences of the diode barrier capacitance on bias voltage and temperature.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1189, doi. 10.1134/S1063782607100120

By:

Murygin, V. I.;
Fattakhdinov, A. U.;
Loktev, D. A.;
Gundyrev, V. B.

Publication type:

Article

Experimental investigation of effect of aromatic hydrocarbons on resistivity of indium selenide.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1197, doi. 10.1134/S1063782607100132

By:

Drapak, S. I.;
Kovalyuk, Z. D.

Publication type:

Article

Relaxation of photodielectric effect in Pb3O4 layers.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1201, doi. 10.1134/S1063782607100144

By:

Avanesyan, V. T.;
Baranova, E. P.

Publication type:

Article

Optical properties of organic semiconductors based on erbium phthalocyanine complexes in the mid- and near-infrared spectral regions.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1204, doi. 10.1134/S1063782607100156

By:

Belogorokhov, I. A.;
Tikhonov, E. V.;
Breusova, M. O.;
Pushkarev, V. E.;
Tomilova, L. G.;
Khokhlov, D. R.

Publication type:

Article

A multifrequency interband two-cascade laser.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1209, doi. 10.1134/S1063782607100168

By:

Biryukov, A. A.;
Zvonkov, B. N.;
Nekorkin, S. M.;
Demina, P. B.;
Semenov, N. N.;
Aleshkin, V. Ya.;
Gavrilenko, V. I.;
Dubinov, A. A.;
Marem'yanin, K. V.;
Morozov, S. V.;
Belyanin, A. A.;
Kocharovsky, V. V.;
Kocharovsky, Vl. V.

Publication type:

Article

Effect of chemical treatment on photoluminescence spectra of SiO x layers with built-in Si nanocrystals.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1248, doi. 10.1134/S1063782607100223

By:

Indutnyy, I. Z.;
Maǐdanchuk, I. Yu.;
Min'ko, V. I.;
Shepelyavyǐ, P. E.;
Dan'ko, V. A.

Publication type:

Article

Comparative analysis of photoconversion efficiency in the Si solar cells under concentrated illumination for the standard and rear geometries of arrangement of contacts.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1214, doi. 10.1134/S106378260710017X

By:

Sachenko, A. V.;
Gorban, A. P.;
Kostylyov, V. P.;
Serba, A. A.;
Sokolovskyi, I. O.

Publication type:

Article

Double-band generation in quantum-well semiconductor laser at high injection levels.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1230, doi. 10.1134/S1063782607100193

By:

Vinokurov, D. A.;
Zorina, S. A.;
Kapitonov, V. A.;
Leshko, A. Yu.;
Lyutetskiǐ;, A. V.;
Nalet, T. A.;
Nikolaev, D. N.;
Pikhtin, N. A.;
Rudova, N. A.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Stankevich, A. L.;
Fetisova, N. V.;
Khomylev, M. A.;
Shamakhov, V. V.;
Borshchev, K. S.;
Arsent'ev, I. N.;
Bondarev, A. D.;
Trukan, M. K.;
Tarasov, I. S.

Publication type:

Article

Effect of copper doping on kinetic phenomena in n-Bi2Te2.85Se0.15.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1140, doi. 10.1134/S1063782607100028

By:

Zhitinskaya, M. K.;
Nemov, S. A.;
Svechnikova, T. E.

Publication type:

Article

Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1234, doi. 10.1134/S106378260710020X

By:

Bolkhovityanov, Yu. B.;
Deryabin, A. S.;
Gutakovskiǐ, A. K.;
Kolesnikov, A. V.;
Sokolov, L. V.

Publication type:

Article

Nucleation at the lateral surface and the shape of whisker nanocrystals.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1240, doi. 10.1134/S1063782607100211

By:

Dubrovskiǐ, V. G.;
Sibirev, N. V.;
Cirlin, G. É.;
Ustinov, V. M.;
Harmand, J. C.

Publication type:

Article

The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1224, doi. 10.1134/S1063782607100181

By:

Kuzmenkov, A. G.;
Blokhin, S. A.;
Maleev, N. A.;
Sakharov, A. V.;
Tikhomirov, V. G.;
Maksimov, M. V.;
Ustinov, V. M.;
Kovsh, A. R.;
Mikhrin, S. S.;
Ledentsov, N. N.;
Yang, H. P. D.;
Lin, G.;
Hsiao, R. S.;
Chi, J. Y.

Publication type:

Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 10

Specific features in the energy spectrum of the narrow-gap semiconductor bicrystals Bi<sub>1 − x </sub>Sb<sub> x </sub> (0.06 ≤ x ≤ 0.20).

Photosensitivity of the structures on the Cu(In,Ga)(S,Se)<sub>2</sub> films obtained by thermal treatment in the S and Se vapors.

Conduction mechanisms in silicon-polymer-metal heterostructures.

Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy.

Effect of energy band bending on non-steady-state Dember EMF in bipolar semiconductors.

Characteristics of tunneling and impact ionization in ZnS:Mn-based thin-film electroluminescent structures.

Fabrication and properties of point structures formed on n-InSe single crystals.

Defects of the structure of semiconductor superlattices grown on the basis of II–VI alloys.

Intensification of electroluminescence of ZnSe:(Te, O) crystals as a result of irradiation with γ-ray photons.

Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data.

Effect of slow electrons on the field dependences of the Hall coefficient for Cd<sub> x </sub>Hg<sub>1 − x </sub>Te alloys at T = 77 K.

Anomalous dependences of the diode barrier capacitance on bias voltage and temperature.

Experimental investigation of effect of aromatic hydrocarbons on resistivity of indium selenide.

Relaxation of photodielectric effect in Pb<sub>3</sub>O<sub>4</sub> layers.

Optical properties of organic semiconductors based on erbium phthalocyanine complexes in the mid- and near-infrared spectral regions.

A multifrequency interband two-cascade laser.

Effect of chemical treatment on photoluminescence spectra of SiO<sub> x </sub> layers with built-in Si nanocrystals.

Comparative analysis of photoconversion efficiency in the Si solar cells under concentrated illumination for the standard and rear geometries of arrangement of contacts.

Double-band generation in quantum-well semiconductor laser at high injection levels.

Effect of copper doping on kinetic phenomena in n-Bi<sub>2</sub>Te<sub>2.85</sub>Se<sub>0.15</sub>.

Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant.

Nucleation at the lateral surface and the shape of whisker nanocrystals.

The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots.