Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 9

Results: 20

The model of self-compensation and pinning of the Fermi level in irradiated semiconductors.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1011, doi. 10.1134/S1063782607090023

By:

Brudnyĭ, V. N.;
Kolin, N. G.;
Smirnov, L. S.

Publication type:

Article

Charge transport in silver chalcogenides in the region of phase transition.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1027, doi. 10.1134/S1063782607090047

By:

Aliev, S. A.;
Agaev, Z. F.;
Zul’figarov, É. I.

Publication type:

Article

A study of isotype photosensitive heterostructures (intrinsic oxide)- n-InSe prepared by long-term thermal oxidation.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1056, doi. 10.1134/S1063782607090096

By:

Kovalyuk, Z. D.;
Sydor, O. N.;
Katerinchuk, V. N.;
Netyaga, V. V.

Publication type:

Article

Features of electrical conductivity in the n-ZrNiSn intermetallic semiconductor heavily doped with the In acceptor impurity.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1041, doi. 10.1134/S1063782607090072

By:

Romaka, V. A.;
Stadnyk, Yu. V.;
Romaka, V. V.;
Fruchart, D.;
Gorelenko, Yu. K.;
Chekurin, V. F.;
Goryn’, A. M.

Publication type:

Article

Viktor Il’ich Fistul’ (dedicated to his 80th birthday).

Published in:: Semiconductors, 2007, v. 41, n. 9, p. 1132, doi. 10.1134/S1063782607090205
Publication type:: Article

Combustion and explosion of nanostructured silicon in microsystem devices.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1113, doi. 10.1134/S1063782607090175

By:

Lazaruk, S. K.;
Dolbik, A. V.;
Labunov, V. A.;
Borisenko, V. E.

Publication type:

Article

Metal-insulator transition in chromium-doped Pb1− x Ge x Te alloys.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1035, doi. 10.1134/S1063782607090060

By:

Skipetrov, E. P.;
Pakpur, F. A.;
Pichugin, N. A.;
Slyn’ko, V. E.

Publication type:

Article

Transient current in thin layers of disordered organic materials under conditions of nonequilibrium charge carrier transport.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1101, doi. 10.1134/S1063782607090151

By:

Nikitenko, V. R.;
Tyutnev, A. P.

Publication type:

Article

Nonlinear effects in spin relaxation of cavity polaritons.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1080, doi. 10.1134/S1063782607090138

By:

Solnyshkov, D. D.;
Shelykh, I. A.;
Glazov, M. M.;
Malpuech, G.;
Amand, T.;
Renucci, P.;
Marie, X.;
Kavokin, A. V.

Publication type:

Article

Out-diffusion of impurity via the kick-out mechanism during gettering.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1048, doi. 10.1134/S1063782607090084

By:

Aleksandrov, O. V.;
Krivoruchko, A. A.

Publication type:

Article

On the origin of the 1-eV band in photoluminescence from Cd1− x Zn x Te.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1033, doi. 10.1134/S1063782607090059

By:

Sedov, V. E.;
Matveev, O. A.;
Terent’ev, A. I.;
Zelenina, N. K.

Publication type:

Article

Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1060, doi. 10.1134/S1063782607090102

By:

Avakyants, L. P.;
Badgutdinov, M. L.;
Bokov, P. Yu.;
Chervyakov, A. V.;
Shirokov, S. S.;
Yunovich, A. E.;
Bogdanov, A. A.;
Vasil’eva, E. D.;
Nikolaev, D. A.;
Feopentov, A. V.

Publication type:

Article

Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1074, doi. 10.1134/S1063782607090126

By:

Požela, J.;
Požela, K.;
Jucienė, V.

Publication type:

Article

Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1005, doi. 10.1134/S1063782607090011

By:

Alekseev, A. N.;
Byrnaz, A. É;
Krasovitsky, D. M.;
Pavlenko, M. V.;
Petrov, S. I.;
Pogorel’sky, Yu. V.;
Sokolov, I. A.;
Sokolov, M. A.;
Stepanov, M. V.;
Shkurko, A. P.;
Chalyi, V. P.

Publication type:

Article

Formation, crystal structure, and properties of silicon with buried iron disilicide nanocrystallites on Si (100) substrates.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1067, doi. 10.1134/S1063782607090114

By:

Galkin, N. G.;
Goroshko, D. L.;
Polyarnyĭ, V. O.;
Chusovitin, E. A.;
Gutakovskiĭ, A. K.;
Latyshev, A. V.;
Khang, Y.

Publication type:

Article

On the temperature dependence of the thermoelectric power in disordered semiconductors.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1021, doi. 10.1134/S1063782607090035

By:

Parfenov, O. E.;
Shklyaruk, F. A.

Publication type:

Article

Effect of spin-orbit coupling on the spectrum of two-dimensional electrons in a magnetic field.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1092, doi. 10.1134/S106378260709014X

By:

Alekseev, P. S.;
Yakunin, M. V.;
Yassievich, I. N.

Publication type:

Article

Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2- n-Si heterostructures.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1117, doi. 10.1134/S1063782607090187

By:

Zhdan, A.;
Kukharskaya, N.;
Naryshkina, V.;
Chucheva, G.

Publication type:

Article

Electroluminescence from nanostructured silicon embedded in anodic alumina.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1109, doi. 10.1134/S1063782607090163

By:

Lazarouk, S. K.;
Sasinovich, D. A.;
Katsuba, P. S.;
Labunov, V. A.;
Leshok, A. A.;
Borisenko, V. E.

Publication type:

Article

Electroluminescence spectra of ultraviolet light-emitting diodes based on p- n-heterostructures coated with phosphors.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1126, doi. 10.1134/S1063782607090199

By:

Gal’china, N.;
Kogan, L.;
Soshchin, N.;
Shirokov, S.;
Yunovich, A.

Publication type:

Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 9

The model of self-compensation and pinning of the Fermi level in irradiated semiconductors.

Charge transport in silver chalcogenides in the region of phase transition.

A study of isotype photosensitive heterostructures (intrinsic oxide)- n-InSe prepared by long-term thermal oxidation.

Features of electrical conductivity in the n-ZrNiSn intermetallic semiconductor heavily doped with the In acceptor impurity.

Viktor Il’ich Fistul’ (dedicated to his 80th birthday).

Combustion and explosion of nanostructured silicon in microsystem devices.

Metal-insulator transition in chromium-doped Pb<sub>1− x </sub>Ge<sub> x </sub>Te alloys.

Transient current in thin layers of disordered organic materials under conditions of nonequilibrium charge carrier transport.

Nonlinear effects in spin relaxation of cavity polaritons.

Out-diffusion of impurity via the kick-out mechanism during gettering.

On the origin of the 1-eV band in photoluminescence from Cd<sub>1− x </sub>Zn<sub> x </sub>Te.

Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures.

Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure.

Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system.

Formation, crystal structure, and properties of silicon with buried iron disilicide nanocrystallites on Si (100) substrates.

On the temperature dependence of the thermoelectric power in disordered semiconductors.

Effect of spin-orbit coupling on the spectrum of two-dimensional electrons in a magnetic field.

Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n <sup>+</sup>-Si-SiO<sub>2</sub>- n-Si heterostructures.

Electroluminescence from nanostructured silicon embedded in anodic alumina.

Electroluminescence spectra of ultraviolet light-emitting diodes based on p- n-heterostructures coated with phosphors.