Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 6
Results: 24
Theory of stationary impact-ionization plane waves in semiconductors.
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- Semiconductors, 2007, v. 41, n. 6, p. 737, doi. 10.1134/S1063782607060243
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Vacancy kinetics in heteropolytype epitaxy of SiC.
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- Semiconductors, 2007, v. 41, n. 6, p. 621, doi. 10.1134/S1063782607060012
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Threshold stresses for motion of dislocations in extrinsic semiconductors.
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- Semiconductors, 2007, v. 41, n. 6, p. 625, doi. 10.1134/S1063782607060024
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Special features of annealing of radiation defects in irradiated p-Si crystals.
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- Semiconductors, 2007, v. 41, n. 6, p. 631, doi. 10.1134/S1063782607060036
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Conductivity and photoconductivity of polymeric composites containing heteropolynuclear Cu(II)/Mn(II) complex in the presence of ionic polymethine dyes.
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- Semiconductors, 2007, v. 41, n. 6, p. 634, doi. 10.1134/S1063782607060048
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Temperature dependence of the band structure of wurtzite-type semiconductor compounds: Gallium and aluminum nitrides.
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- Semiconductors, 2007, v. 41, n. 6, p. 641, doi. 10.1134/S106378260706005X
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Electrical properties of undoped high-resistivity n-CdTe polycrystals.
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- Semiconductors, 2007, v. 41, n. 6, p. 651, doi. 10.1134/S1063782607060061
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Ferromagnetism and anomalous transport in GaAs doped by implantation of Mn and Mg ions.
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- Semiconductors, 2007, v. 41, n. 6, p. 655, doi. 10.1134/S1063782607060073
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Preparation and optical properties of the co-doped ZnTe single crystals.
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- Semiconductors, 2007, v. 41, n. 6, p. 660, doi. 10.1134/S1063782607060085
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Photoconductivity of the Pb<sub>0.75</sub>Sn<sub>0.25</sub>Te:In alloy in an alternating electric field.
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- Semiconductors, 2007, v. 41, n. 6, p. 663, doi. 10.1134/S1063782607060097
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Manifestation of clustering of Ge atoms in the spectra of electron spin resonance of Si<sub>1 − x </sub>Ge<sub> x </sub> alloys (0 < x < 0.057).
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- Semiconductors, 2007, v. 41, n. 6, p. 666, doi. 10.1134/S1063782607060103
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The effect of narrowing of the band gap on surface recombination in silicon.
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- Semiconductors, 2007, v. 41, n. 6, p. 673, doi. 10.1134/S1063782607060115
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Structural and electrical properties of the Ge<sub> x </sub>Si<sub>1− x </sub>/Si heterojunctions obtained by the method of direct bonding.
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- Semiconductors, 2007, v. 41, n. 6, p. 679, doi. 10.1134/S1063782607060127
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Transfer ratio of Langmuir-Blodgett films as an indicator of the single-crystal silicon surface modified by polyionic layers.
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- Semiconductors, 2007, v. 41, n. 6, p. 684, doi. 10.1134/S1063782607060139
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Effect of the bias electric field on the spectral distribution of the photodielectric effect in the Schottky-barrier structures based on the cadmium-zinc telluride crystals.
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- Semiconductors, 2007, v. 41, n. 6, p. 689, doi. 10.1134/S1063782607060140
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On the electron affinity of silicon carbide polytypes.
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- Semiconductors, 2007, v. 41, n. 6, p. 696, doi. 10.1134/S1063782607060152
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The effect of low-field injection of charge carriers on the electrical properties of the metal-oxide-semiconductor structures.
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- Semiconductors, 2007, v. 41, n. 6, p. 699, doi. 10.1134/S1063782607060164
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Electron-photon drag effect in a semiconductor superlattice subjected to a high electric field.
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- Semiconductors, 2007, v. 41, n. 6, p. 704, doi. 10.1134/S1063782607060176
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Random lasing in vertical ZnO nanorods.
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- Semiconductors, 2007, v. 41, n. 6, p. 708, doi. 10.1134/S1063782607060188
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Variations in the intensity of lasing in vertical ZnO nanorods with polarization of optical excitation.
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- Semiconductors, 2007, v. 41, n. 6, p. 713, doi. 10.1134/S106378260706019X
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A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode.
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- Semiconductors, 2007, v. 41, n. 6, p. 718, doi. 10.1134/S1063782607060206
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Color capabilities of ZnS:(CuCl,Ga) luminophores depending on the sequence of doping with CuCl and gallium.
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- Semiconductors, 2007, v. 41, n. 6, p. 723, doi. 10.1134/S1063782607060218
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High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD.
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- Semiconductors, 2007, v. 41, n. 6, p. 727, doi. 10.1134/S106378260706022X
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The effect of damaging radiation ( p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions.
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- Semiconductors, 2007, v. 41, n. 6, p. 732, doi. 10.1134/S1063782607060231
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