Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 5

Results: 24

Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 575, doi. 10.1134/S1063782607050193
By:
- Sizov, D. S.;
- Zavarin, E. E.;
- Ledentsov, N. N.;
- Lundin, V. V.;
- Musikhin, Yu. G.;
- Sizov, V. S.;
- Suris, R. A.;
- Tsatsul'nikov, A. F.
Publication type:
Article
Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 616, doi. 10.1134/S1063782607050247
By:
- Sobolev, N. A.;
- Emel'yanov, A. M.;
- Zabrodskiĭ, V. V.;
- Zabrodskaya, N. V.;
- Sukhanov, V. L.;
- Shek, E. I.
Publication type:
Article
Charge transport in detectors on the basis of gallium arsenide compensated with chromium.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 612, doi. 10.1134/S1063782607050235
By:
- Ayzenshtat, G. I.;
- Lelekov, M. A.;
- Novikov, V. A.;
- Okaevich, L. S.;
- Tolbanov, O. P.
Publication type:
Article
Modulation of intersubband absorption in tunnel-coupled quantum wells in electric fields.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 596, doi. 10.1134/S1063782607050211
By:
- Zerova, V. L.;
- Vorob'ev, L. E.;
- Firsov, D. A.;
- Towe, E.
Publication type:
Article
Anomalous electron spin splitting in InAs pumped by injection.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 570, doi. 10.1134/S1063782607050181
By:
- Terent'ev, Ya.;
- Lyublinskaya, O. G.;
- Toropov, A. A.;
- Solov'ev, V. A.;
- Sorokin, S. V.;
- Usikova, A. A.;
- Ivanov, S. V.
Publication type:
Article
Low-temperature recrystallization of Ge nanolayers on ZnSe.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 590, doi. 10.1134/S106378260705020X
By:
- Suprun, S. P.;
- Fedosenko, E. V.
Publication type:
Article
Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 606, doi. 10.1134/S1063782607050223
By:
- Zhukov, A. E.;
- Kovsh, A. R.;
- Nikitina, E. V.;
- Ustinov, V. M.;
- Alferov, Zh. I.
Publication type:
Article
White electroluminescence from ZnO/GaN structures.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 564, doi. 10.1134/S106378260705017X
By:
- Titkov, I. E.;
- Zubrilov, A. S.;
- Delimova, L. A.;
- Mashovets, D. V.;
- Liniĭchuk, I. A.;
- Grekhov, I. V.
Publication type:
Article
AFM application for in situ study of adsorption processes.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 495, doi. 10.1134/S1063782607050016
By:
- Sosnov, E. A.;
- Belova, S. A.;
- Malygin, A. A.
Publication type:
Article
AFM examination of nanolayers synthesised by the molecular layering method on the surface of manufacturing glasses.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 498, doi. 10.1134/S1063782607050028
By:
- Sosnov, E. A.;
- Dorofeev, V. P.;
- Malkov, A. A.;
- Malygin, A. A.;
- Kulikov, N. A.;
- Brusilovsky, G. L.
Publication type:
Article
Application of EBIV technique for investigation of electrophysical parameters of devices based on HTSC.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 502, doi. 10.1134/S106378260705003X
By:
- Baryshev, S. V.;
- Bobyl, A. V.;
- Kostyleva, O. P.
Publication type:
Article
Microstructure evolution and magnetoresistance of the A-site ordered Ba-doped manganites.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 507, doi. 10.1134/S1063782607050041
By:
- Trukhanov, S. V.;
- Lobanovski, L. S.;
- Bushinsky, M. V.;
- Khomchenko, V. A.;
- Fedotova, V. V.;
- Troyanchuk, I. O.;
- Szymczak, H.
Publication type:
Article
Cathodoluminescence properties of yttrium aluminum garnet doped with Eu2+ and Eu3+ ions.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 512, doi. 10.1134/S1063782607050053
By:
- Trofimov, A. N.;
- Petrova, M. A.;
- Zamoryanskaya, M. V.
Publication type:
Article
Simulation of e-beam penetration through multilayer structures.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 516, doi. 10.1134/S1063782607050065
By:
- Borisov, S. S.;
- Zaitsev, S. I.
Publication type:
Article
Reconstruction of the InSb (111)In surface as a result of sulfur adsorption.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 521, doi. 10.1134/S1063782607050077
By:
- Lebedev, M. V.;
- Shimomura, M.;
- Fukuda, Y.
Publication type:
Article
Alternating current conductivity and electron spin resonance of the Cd1 − x FexTe alloys.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 526, doi. 10.1134/S1063782607050089
By:
- Zhukovski, P.;
- Partyka, Ya.;
- Vengerek, P.;
- Koltunovich, T.;
- Sidorenko, Yu.;
- Stelmakh, V.;
- Lapchuk, N.
Publication type:
Article
Bistable amphoteric centers with reverse order of electron levels in semiconductors.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 531, doi. 10.1134/S1063782607050090
By:
- Nikitina, A. G.;
- Zuev, V. V.
Publication type:
Article
Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 537, doi. 10.1134/S1063782607050107
By:
- Sobolev, N. A.;
- Emel'yanov, A. M.;
- Sakharov, V. I.;
- Serenkov, I. T.;
- Shek, E. I.;
- Tetel'baum, D. I.
Publication type:
Article
Specific features of electrical properties of the InxGa1 − x N alloy.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 540, doi. 10.1134/S1063782607050119
By:
- Komissarova, T. A.;
- Matrosov, N. N.;
- Ryabova, L. I.;
- Khokhlov, D. R.;
- Jmerik, V. N.;
- Ivanov, S. V.
Publication type:
Article
Low-temperature (77 K) impurity breakdown in p-type 4 H-SiC.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 542, doi. 10.1134/S1063782607050120
By:
- Grekhov, I. V.;
- Ivanov, P. A.;
- Potapov, A. S.;
- Samsonova, T. P.
Publication type:
Article
Quasi-local states of Sn in Bi2Te3 according to the studies of galvanomagnetic effects in classical and quantizing magnetic fields.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 546, doi. 10.1134/S1063782607050132
By:
- Laiho, R.;
- Nemov, S. A.;
- Lashkul, A. V.;
- Lähderanta, E.;
- Svechnikova, T. E.;
- Dvornik, D. S.
Publication type:
Article
The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 550, doi. 10.1134/S1063782607050144
By:
- Kovalyuk, Z. D.;
- Litovchenko, P. G.;
- Politanska, O. A.;
- Sydor, O. N.;
- Katerynchuk, V. N.;
- Lastovetsky, V. F.;
- Litovchenko, O. P.;
- Dubovoy, V. K.;
- Polivtsev, L. A.
Publication type:
Article
X-ray photoelectron spectroscopy of gallium nitride films grown by radical-beam gettering epitaxy.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 555, doi. 10.1134/S1063782607050156
By:
- Rogozin, I. V.;
- Kotlyarevsky, M. B.
Publication type:
Article
Study of initial stages of Pb growth on the Si (7710) surface by the method of scanning tunneling spectroscopy.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 560, doi. 10.1134/S1063782607050168
By:
- Zhachuk, R. A.;
- Teys, S. A.;
- Olshanetsky, B. Z.
Publication type:
Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 5

Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots.

Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus.

Charge transport in detectors on the basis of gallium arsenide compensated with chromium.

Modulation of intersubband absorption in tunnel-coupled quantum wells in electric fields.

Anomalous electron spin splitting in InAs pumped by injection.

Low-temperature recrystallization of Ge nanolayers on ZnSe.

Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots.

White electroluminescence from ZnO/GaN structures.

AFM application for in situ study of adsorption processes.

AFM examination of nanolayers synthesised by the molecular layering method on the surface of manufacturing glasses.

Application of EBIV technique for investigation of electrophysical parameters of devices based on HTSC.

Microstructure evolution and magnetoresistance of the A-site ordered Ba-doped manganites.

Cathodoluminescence properties of yttrium aluminum garnet doped with Eu<sup>2+</sup> and Eu<sup>3+</sup> ions.

Simulation of e-beam penetration through multilayer structures.

Reconstruction of the InSb (111)In surface as a result of sulfur adsorption.

Alternating current conductivity and electron spin resonance of the Cd<sub>1 − x </sub>Fe<sub>x</sub>Te alloys.

Bistable amphoteric centers with reverse order of electron levels in semiconductors.

Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing.

Specific features of electrical properties of the In<sub>x</sub>Ga<sub>1 − x </sub>N alloy.

Low-temperature (77 K) impurity breakdown in p-type 4 H-SiC.

Quasi-local states of Sn in Bi<sub>2</sub>Te<sub>3</sub> according to the studies of galvanomagnetic effects in classical and quantizing magnetic fields.

The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures.

X-ray photoelectron spectroscopy of gallium nitride films grown by radical-beam gettering epitaxy.

Study of initial stages of Pb growth on the Si (7710) surface by the method of scanning tunneling spectroscopy.