Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 4

Results: 26

EBIC characterization of light-emitting structures based on GaN.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 491, doi. 10.1134/S1063782607040264

By:

Shmidt, N.M.;
Vergeles, P.S.;
Yakimov, E.B.

Publication type:

Article

Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 473, doi. 10.1134/S1063782607040227

By:

Khrustalev, V.S.;
Bobyl, A.V.;
Konnikov, S.G.;
Maleev, N.A.;
Zamoryanskaya, M.V.

Publication type:

Article

AFM investigation of thin post-baked photoresistive films for microsystem technology application.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 469, doi. 10.1134/S1063782607040215

By:

Alexandrov, S.E.;
Speshilova, A.B.;
Soloviev, Y.V.;
Ermeychik, O.I.

Publication type:

Article

Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 487, doi. 10.1134/S1063782607040252

By:

Afrosimov, V.V.;
Il’in, R.R.;
Sakharov, V.I.;
Serenkov, I.T.

Publication type:

Article

Evolution of luminescence properties of natural oxide on silicon and porous silicon.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 482, doi. 10.1134/S1063782607040240

By:

Sokolov, R.V.;
Zamoryanskaya, M.V.;
Kolesnikova, E.V.;
Sokolov, V.I.

Publication type:

Article

Cathodoluminescence of laser AIIBVI heterostructures.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 478, doi. 10.1134/S1063782607040239

By:

Ivanov, A.S.;
Vasilev, V.I.;
Sedova, I.V.;
Sorokin, S.A.;
Sitnikova, A.A.;
Konnikov, S.G.;
Popova, T.B.;
Zamoryanskaya, M.V.

Publication type:

Article

Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 387, doi. 10.1134/S1063782607040045

By:

Kolesnikova, E.;
Mynbaeva, M.;
Sitnikova, A.

Publication type:

Article

Cathodoluminescence study of silicon oxide-silicon interface.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 462, doi. 10.1134/S1063782607040203

By:

Zamoryanskaya, M.V.;
Sokolov, V.I.

Publication type:

Article

The use of cathodoluminescence for the development of durable self-glowing crystals based on solid solutions YPO4-EuPO4.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 427, doi. 10.1134/S1063782607040124

By:

Burakov, B.E.;
Garbuzov, V.M.;
Kitsay, A.A.;
Zirlin, V.A.;
Petrova, M.A.;
Domracheva, Ya.V.;
Zamoryanskaya, M.V.;
Kolesnikova, E.V.;
Yagovkina, M.A.;
Orlova, M.P.

Publication type:

Article

Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 458, doi. 10.1134/S1063782607040197

By:

Yu, X.;
Vyvenko, O.;
Kittler, M.;
Seifert, W.;
Mtchedlidze, T.;
Arguirov, T.;
Reiche, M.

Publication type:

Article

STM and LEED studies of atomically ordered terraced Si(557) surfaces.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 431, doi. 10.1134/S1063782607040136

By:

Chaika, A.N.;
Bozhko, S.I.;
Ionov, A.M.;
Myagkov, A.N.;
Abrosimov, N.V.

Publication type:

Article

Photoinduced transient spectroscopy of defect centers in GaN and SiC.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 414, doi. 10.1134/S1063782607040100

By:

Kamiński, P.;
Kozłowski, R.;
Kozubal, M.;
Żelazko, J.;
Miczuga, M.;
Pawłowski, M.

Publication type:

Article

Multimodal luminescence spectra of ion-implanted silica.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 453, doi. 10.1134/S1063782607040185

By:

Fitting, H.-J.;
Salh, Roushdey;
Schmidt, B.

Publication type:

Article

Initial stages of gold adsorption on silicon stepped surface at elevated temperatures.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 448, doi. 10.1134/S1063782607040173

By:

Kosolobov, S.S.;
Song, Se Ahn;
Rodyakina, E.E.;
Latyshev, A.V.

Publication type:

Article

Mathematical simulation of the distribution of minority charge carriers generated in a multilayer semiconducting structure by a wide electron beam.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 444, doi. 10.1134/S1063782607040161

By:

Burylova, I.V.;
Petrov, V.I.;
Snopova, M.G.;
Stepovich, M.A.

Publication type:

Article

Material-induced shunts in multicrystalline silicon solar cells.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 440, doi. 10.1134/S106378260704015X

By:

Breitenstein, O.;
Bauer, J.;
Rakotoniaina, J.P.

Publication type:

Article

Photoluminescence study on defects in multicrystalline silicon.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 436, doi. 10.1134/S1063782607040148

By:

Arguirov, T.;
Seifer, W.;
Jia, G.;
Kittler, M.

Publication type:

Article

Structural peculiarities of 4 H-SiC irradiated by Bi ions.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 376, doi. 10.1134/S1063782607040021

By:

Kalinina, E.V.;
Skuratov, V.A.;
Sitnikova, A.A.;
Kolesnikova, E.V.;
Tregubova, A.S.;
Shcheglov, M.P.

Publication type:

Article

Micro-and nano-structures in silicon studied by DLTS and scanning probe methods.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 421, doi. 10.1134/S1063782607040112

By:

Cavalcoli, D.;
Cavallini, A.;
Rossi, M.;
Pizzini, S.

Publication type:

Article

Simulation and measurements of EBIC images of photoconductive elements based on HgCdTe.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 407, doi. 10.1134/S1063782607040082

By:

Krapukhin, V.V.;
Vergeles, P.S.;
Yakimov, E.B.

Publication type:

Article

EBIC measurements of small diffusion length in semiconductor structures.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 411, doi. 10.1134/S1063782607040094

By:

Yakimov, E.B.;
Borisov, S.S.;
Zaitsev, S.I.

Publication type:

Article

EBIC characterization of strained Si/SiGe heterostructures.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 402, doi. 10.1134/S1063782607040070

By:

Yakimov, E.B.;
Zhang, R.H.;
Rozgonyi, G.A.;
Seacrist, M.

Publication type:

Article

IBIC characterization of charge transport in CdTe:Cl.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 395, doi. 10.1134/S1063782607040069

By:

Sellin, P.J.;
Davies, A.W.;
Boroumand, F.;
Lohstroh, A.;
Özsan, M.E.;
Parkin, J.;
Veale, M.

Publication type:

Article

Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 391, doi. 10.1134/S1063782607040057

By:

Jia, G.;
Arguirov, T.;
Kittler, M.;
Su, Z.;
Yang, D.;
Sha, J.

Publication type:

Article

Si and Ge nanocluster formation in silica matrix.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 381, doi. 10.1134/S1063782607040033

By:

Salh, Roushdey;
Fitting, L.;
Kolesnikova, E.;
Sitnikova, A.;
Zamoryanskaya, M.;
Schmidt, B.;
Fitting, H.

Publication type:

Article

In-depth resolution for LBIC technique by two-photon absorption.

Published in:

Semiconductors, 2007, v. 41, n. 4, p. 371, doi. 10.1134/S106378260704001X

By:

Wan, D.;
Pouget, V.;
Douin, A.;
Jaulent, P.;
Lewis, D.;
Fouillat, P.

Publication type:

Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 4

EBIC characterization of light-emitting structures based on GaN.

Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging.

AFM investigation of thin post-baked photoresistive films for microsystem technology application.

Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique.

Evolution of luminescence properties of natural oxide on silicon and porous silicon.

Cathodoluminescence of laser A<sup>II</sup>B<sup>VI</sup> heterostructures.

Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates.

Cathodoluminescence study of silicon oxide-silicon interface.

The use of cathodoluminescence for the development of durable self-glowing crystals based on solid solutions YPO<sub>4</sub>-EuPO<sub>4</sub>.

Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding.

STM and LEED studies of atomically ordered terraced Si(557) surfaces.

Photoinduced transient spectroscopy of defect centers in GaN and SiC.

Multimodal luminescence spectra of ion-implanted silica.

Initial stages of gold adsorption on silicon stepped surface at elevated temperatures.

Mathematical simulation of the distribution of minority charge carriers generated in a multilayer semiconducting structure by a wide electron beam.

Material-induced shunts in multicrystalline silicon solar cells.

Photoluminescence study on defects in multicrystalline silicon.

Structural peculiarities of 4 H-SiC irradiated by Bi ions.

Micro-and nano-structures in silicon studied by DLTS and scanning probe methods.

Simulation and measurements of EBIC images of photoconductive elements based on HgCdTe.

EBIC measurements of small diffusion length in semiconductor structures.

EBIC characterization of strained Si/SiGe heterostructures.

IBIC characterization of charge transport in CdTe:Cl.

Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO.

Si and Ge nanocluster formation in silica matrix.

In-depth resolution for LBIC technique by two-photon absorption.