VIII Russian Conference on the physics of semiconductors.
- Published in:
- 2007
- Publication type:
- Report
Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 3
Results: 24
1
2
Increase in the electron mobility in the inversion channel of a Si-MOS transistor in the case of ion polarization of the gate oxide.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 357, doi. 10.1134/S1063782607030219
- By:
- Publication type:
- Article
3
Aleksandr Leonidovich Aseev (on the 60th anniversary of his birth).
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 365, doi. 10.1134/S1063782607030232
- Publication type:
- Article
4
Negative luminescence and devices based on this phenomenon.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 247, doi. 10.1134/S1063782607030013
- By:
- Publication type:
- Article
5
A study of thick 3 C-SiC epitaxial layers grown on 6 H-SiC substrates by sublimation epitaxy in vacuum.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 263, doi. 10.1134/S1063782607030037
- By:
- Publication type:
- Article
6
The effect of irradiation with high-energy protons on 4 H-SiC detectors.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 345, doi. 10.1134/S1063782607030190
- By:
- Publication type:
- Article
7
Fractional differential kinetics of charge transport in unordered semiconductors.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 335, doi. 10.1134/S1063782607030177
- By:
- Publication type:
- Article
8
Electrical properties of n-ZnO/ p-CuO heterostructures.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 288, doi. 10.1134/S1063782607030098
- By:
- Publication type:
- Article
9
Quadratic recombination in silicon and its influence on the bulk lifetime.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 281, doi. 10.1134/S1063782607030074
- By:
- Publication type:
- Article
10
The shape of the signals of transient photoconductivity in silicon doped with gold or sulfur.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 259, doi. 10.1134/S1063782607030025
- By:
- Publication type:
- Article
11
Behavior of germanium ion-implanted into SiO<sub>2</sub> near the bonding interface of a silicon-on-insulator structure.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 291, doi. 10.1134/S1063782607030104
- By:
- Publication type:
- Article
12
The band structure and the double metal-insulator-metal phase transition in the conductivity of elastically strained zero-gap Cd<sub> x </sub>Hg<sub>1− x </sub>Te.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 266, doi. 10.1134/S1063782607030049
- By:
- Publication type:
- Article
13
Effect of energy-band bending on the thermopower in bipolar semiconductors.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 272, doi. 10.1134/S1063782607030050
- By:
- Publication type:
- Article
14
Dislocation-related luminescence in silicon, caused by implantation of oxygen ions and subsequent annealing.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 285, doi. 10.1134/S1063782607030086
- By:
- Publication type:
- Article
15
Measurement and comparison of complex impedance of silicon p-i-n photodiodes at different temperatures.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 353, doi. 10.1134/S1063782607030207
- By:
- Publication type:
- Article
16
A mathematical simulation of the effect of the bistability of current characteristics in nanosized multiple-layer heavily doped heterostructures.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 314, doi. 10.1134/S1063782607030141
- By:
- Publication type:
- Article
17
Role of spontaneous polarization in formation of heterojunctions from silicon carbide polytypes.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 297, doi. 10.1134/S1063782607030116
- By:
- Publication type:
- Article
18
Effect of the buffer layer of GaSe intrinsic oxide with nanometer thickness on electrical, photoelectric, and emissive properties of ITO-GaSe heterostructures.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 301, doi. 10.1134/S1063782607030128
- By:
- Publication type:
- Article
19
Special features of the Fourier spectra of magnetoresistance oscillations in a heavily doped heterostructure.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 307, doi. 10.1134/S106378260703013X
- By:
- Publication type:
- Article
20
Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 361, doi. 10.1134/S1063782607030220
- By:
- Publication type:
- Article
21
Characterization of In<sub> x </sub>Ga<sub>1− x </sub>As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 320, doi. 10.1134/S1063782607030153
- By:
- Publication type:
- Article
22
Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 327, doi. 10.1134/S1063782607030165
- By:
- Publication type:
- Article
23
Longitudinal autosoliton motion across p-InSb in a transverse magnetic field.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 277, doi. 10.1134/S1063782607030062
- By:
- Publication type:
- Article
24
Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 341, doi. 10.1134/S1063782607030189
- By:
- Publication type:
- Article