Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 2
Results: 24
Superconducting states of lead nanoinclusions in the stoichiometric PbTe matrix.
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- Semiconductors, 2007, v. 41, n. 2, p. 140, doi. 10.1134/S1063782607020042
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Anatoliĭ Grigor’evich Samoĭlovich (1906–2006) (On the centenary of his birth).
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- Semiconductors, 2007, v. 41, n. 2, p. 240, doi. 10.1134/S1063782607020248
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Self-ordering of Mg and O isoelectronic impurities in ZnSe.
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- Semiconductors, 2007, v. 41, n. 2, p. 125, doi. 10.1134/S1063782607020017
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Mechanisms of recombination of nonequilibrium charge carriers in epitaxial Cd<sub>x</sub>Hg<sub>1− x </sub>Te ( x = 0.20–0.23) layers.
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- Semiconductors, 2007, v. 41, n. 2, p. 130, doi. 10.1134/S1063782607020029
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- Article
Microphotoluminescence of undoped cadmium telluride grown by nonequilibrium direct synthesis from the flow of components’ vapors.
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- Semiconductors, 2007, v. 41, n. 2, p. 136, doi. 10.1134/S1063782607020030
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Resonant gallium level in Pb<sub>1− x </sub>Sn<sub>x</sub>Te alloys under pressure.
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- Semiconductors, 2007, v. 41, n. 2, p. 145, doi. 10.1134/S1063782607020054
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Electrical properties of isotype N <sup>+</sup>-GaSb/n<sup>0</sup>-GaInAsSb/ N <sup>+</sup>-GaAlAsSb type-II heterojunctions.
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- Semiconductors, 2007, v. 41, n. 2, p. 150, doi. 10.1134/S1063782607020066
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Fabrication and photoelectric properties of oxide/CuIn<sub>5</sub>Se<sub>8</sub> heterojunctions.
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- Semiconductors, 2007, v. 41, n. 2, p. 155, doi. 10.1134/S1063782607020078
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The effect of surface passivation on the intrinsic photoconductivity of gallium phosphide compensated with copper.
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- Semiconductors, 2007, v. 41, n. 2, p. 159, doi. 10.1134/S106378260702008X
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Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system.
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- Semiconductors, 2007, v. 41, n. 2, p. 161, doi. 10.1134/S1063782607020091
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Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers.
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- Semiconductors, 2007, v. 41, n. 2, p. 167, doi. 10.1134/S1063782607020108
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Photoluminescence of germanium quantum dots formed by pulsed laser ablation.
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- Semiconductors, 2007, v. 41, n. 2, p. 172, doi. 10.1134/S106378260702011X
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Luminescence of zinc oxide nanorods.
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- Semiconductors, 2007, v. 41, n. 2, p. 176, doi. 10.1134/S1063782607020121
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Properties of 2D electron gas in AlGaAs/GaAs heterojunctions with thin AlGaAs layers.
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- Semiconductors, 2007, v. 41, n. 2, p. 180, doi. 10.1134/S1063782607020133
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Dielectric function of quasi-2D semiconductor nanostructures.
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- Semiconductors, 2007, v. 41, n. 2, p. 184, doi. 10.1134/S1063782607020145
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Computer study of physical properties of silicon nanostructures.
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- Semiconductors, 2007, v. 41, n. 2, p. 190, doi. 10.1134/S1063782607020157
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Resonances related to an array of InAs quantum dots and controlled by an external electric field.
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- Semiconductors, 2007, v. 41, n. 2, p. 197, doi. 10.1134/S1063782607020169
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- Article
Mechanism of the effect of the electric field of a surface acoustic wave on the low-temperature photoluminescence kinetics in type-II GaAs/AlAs superlattices.
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- Semiconductors, 2007, v. 41, n. 2, p. 205, doi. 10.1134/S1063782607020170
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Control over carrier lifetime in high-voltage p-i-n diodes based on In<sub>x</sub>Ga<sub>1- x </sub>As/GaAs heterostructures.
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- Semiconductors, 2007, v. 41, n. 2, p. 211, doi. 10.1134/S1063782607020182
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Superconducting tunneling-junction detectors of X-ray radiation. Issues concerning the energy resolution.
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- Semiconductors, 2007, v. 41, n. 2, p. 215, doi. 10.1134/S1063782607020194
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Silicon photodiode with a grid p-n junction.
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- Semiconductors, 2007, v. 41, n. 2, p. 223, doi. 10.1134/S1063782607020200
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Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers.
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- Semiconductors, 2007, v. 41, n. 2, p. 227, doi. 10.1134/S1063782607020212
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Electron transport and detection of terahertz radiation in a GaN/AlGaN submicrometer field-effect transistor.
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- Semiconductors, 2007, v. 41, n. 2, p. 232, doi. 10.1134/S1063782607020224
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EBIC study of resistive photosensitive elements based on HgCdTe.
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- Semiconductors, 2007, v. 41, n. 2, p. 235, doi. 10.1134/S1063782607020236
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