Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 2

Results: 24

Anatoliĭ Grigor’evich Samoĭlovich (1906–2006) (On the centenary of his birth).

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 240, doi. 10.1134/S1063782607020248

By:

Bulat, L. P.;
Logvinov, G. N.;
Snarskiĭ, A. A.

Publication type:

Article

Self-ordering of Mg and O isoelectronic impurities in ZnSe.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 125, doi. 10.1134/S1063782607020017

By:

Elyukhina, O. V.;
Sokolovskii, G. S.;
Kuchinskii, V. I.

Publication type:

Article

Electrical properties of isotype N +-GaSb/n0-GaInAsSb/ N +-GaAlAsSb type-II heterojunctions.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 150, doi. 10.1134/S1063782607020066

By:

Ahmetoglu, M. A.;
Andreev, I. A.;
Kunitsyna, E. V.;
Mikhailova, M. P.;
Yakovlev, Yu. P.

Publication type:

Article

Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 161, doi. 10.1134/S1063782607020091

By:

Mikhailova, M. P.;
Moiseev, K. D.;
Voronina, T. I.;
Lagunova, T. S.;
Yakovlev, Yu. P.

Publication type:

Article

Mechanisms of recombination of nonequilibrium charge carriers in epitaxial CdxHg1− x Te ( x = 0.20–0.23) layers.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 130, doi. 10.1134/S1063782607020029

By:

Ikusov, D. G.;
Sizov, F. F.;
Staryi, S. V.;
Teterkin, V. V.

Publication type:

Article

Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 167, doi. 10.1134/S1063782607020108

By:

Shaleev, M. V.;
Novikov, A. V.;
Yablonskiĭ, A. N.;
Kuznetsov, O. A.;
Drozdov, Yu. N.;
Krasil'nik, Z. F.

Publication type:

Article

Resonant gallium level in Pb1− x SnxTe alloys under pressure.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 145, doi. 10.1134/S1063782607020054

By:

Skipetrov, E. P.;
Golubev, A. V.;
Slyn'ko, V. E.

Publication type:

Article

Superconducting states of lead nanoinclusions in the stoichiometric PbTe matrix.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 140, doi. 10.1134/S1063782607020042

By:

Darchuk, L. A.;
Darchuk, S. D.;
Sizov, F. F.;
Golenkov, A. G.

Publication type:

Article

Microphotoluminescence of undoped cadmium telluride grown by nonequilibrium direct synthesis from the flow of components’ vapors.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 136, doi. 10.1134/S1063782607020030

By:

Ushakov, V. V.;
Klevkov, Yu. V.

Publication type:

Article

Luminescence of zinc oxide nanorods.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 176, doi. 10.1134/S1063782607020121

By:

Emel'chenko, G. A.;
Gruzintsev, A. N.;
Kulakov, A. B.;
Samarov, É. N.;
Karpov, I. A.;
Red'kin, A. N.;
Yakimov, E. E.;
Barthou, C.

Publication type:

Article

Photoluminescence of germanium quantum dots formed by pulsed laser ablation.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 172, doi. 10.1134/S106378260702011X

By:

Kaganovich, É. B.;
Manoilov, É. G.;
Begun, E. V.

Publication type:

Article

Properties of 2D electron gas in AlGaAs/GaAs heterojunctions with thin AlGaAs layers.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 180, doi. 10.1134/S1063782607020133

By:

Kozlov, D. A.;
Kvon, Z. D.;
Kalagin, A. K.;
Toropov, A. I.

Publication type:

Article

Fabrication and photoelectric properties of oxide/CuIn5Se8 heterojunctions.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 155, doi. 10.1134/S1063782607020078

By:

Bodnar', I. V.;
Vaĭpolin, A. A.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.

Publication type:

Article

The effect of surface passivation on the intrinsic photoconductivity of gallium phosphide compensated with copper.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 159, doi. 10.1134/S106378260702008X

By:

Kozhevnikov, A. A.;
Pribylov, N. N.

Publication type:

Article

Dielectric function of quasi-2D semiconductor nanostructures.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 184, doi. 10.1134/S1063782607020145

By:

Bazhenov, N. L.;
Mynbaev, K. D.;
Zegrya, G. G.

Publication type:

Article

Computer study of physical properties of silicon nanostructures.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 190, doi. 10.1134/S1063782607020157

By:

Galashev, A. E.;
Izmodenov, I. A.;
Novruzov, A. N.;
Novruzova, O. A.

Publication type:

Article

Resonances related to an array of InAs quantum dots and controlled by an external electric field.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 197, doi. 10.1134/S1063782607020169

By:

Talalaev, V. G.;
Novikov, B. V.;
Sokolov, A. S.;
Strom, I. V.;
Tomm, J. W.;
Zakharov, N. D.;
Werner, P.;
Cirlin, G. E.;
Tonkikh, A. A.

Publication type:

Article

Mechanism of the effect of the electric field of a surface acoustic wave on the low-temperature photoluminescence kinetics in type-II GaAs/AlAs superlattices.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 205, doi. 10.1134/S1063782607020170

By:

Gulyaev, D. V.;
Zhuravlev, K. S.

Publication type:

Article

Control over carrier lifetime in high-voltage p-i-n diodes based on InxGa1- x As/GaAs heterostructures.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 211, doi. 10.1134/S1063782607020182

By:

Soldatenkov, F. Yu.;
Danil'chenko, V. G.;
Korol'kov, V. I.

Publication type:

Article

Superconducting tunneling-junction detectors of X-ray radiation. Issues concerning the energy resolution.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 215, doi. 10.1134/S1063782607020194

By:

Andrianov, V. A.;
Gor'kov, V. P.;
Koshelets, V. P.;
Filippenko, L. V.

Publication type:

Article

Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 227, doi. 10.1134/S1063782607020212

By:

Alkeev, N. V.;
Averin, S. V.;
Dorofeev, A. A.;
Velling, P.;
Khorenko, E.;
Prost, W.;
Tegude, F. J.

Publication type:

Article

Electron transport and detection of terahertz radiation in a GaN/AlGaN submicrometer field-effect transistor.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 232, doi. 10.1134/S1063782607020224

By:

Gavrilenko, V. I.;
Demidov, E. V.;
Marem'yanin, K. V.;
Morozov, S. V.;
Knap, W.;
Lusakowski, J.

Publication type:

Article

EBIC study of resistive photosensitive elements based on HgCdTe.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 235, doi. 10.1134/S1063782607020236

By:

Vergeles, P. S.;
Krapukhin, V. V.;
Yakimov, E. B.

Publication type:

Article

Silicon photodiode with a grid p-n junction.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 223, doi. 10.1134/S1063782607020200

By:

Blynskii, V. I.;
Vasileuskii, Yu. G.;
Malyshev, S. A.;
Chizh, A. L.

Publication type:

Article

Works matching IS 10637826 AND DT 2007 AND VI 41 AND IP 2

Anatoliĭ Grigor’evich Samoĭlovich (1906–2006) (On the centenary of his birth).

Self-ordering of Mg and O isoelectronic impurities in ZnSe.

Electrical properties of isotype N <sup>+</sup>-GaSb/n<sup>0</sup>-GaInAsSb/ N <sup>+</sup>-GaAlAsSb type-II heterojunctions.

Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system.

Mechanisms of recombination of nonequilibrium charge carriers in epitaxial Cd<sub>x</sub>Hg<sub>1− x </sub>Te ( x = 0.20–0.23) layers.

Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers.

Resonant gallium level in Pb<sub>1− x </sub>Sn<sub>x</sub>Te alloys under pressure.

Superconducting states of lead nanoinclusions in the stoichiometric PbTe matrix.

Microphotoluminescence of undoped cadmium telluride grown by nonequilibrium direct synthesis from the flow of components’ vapors.

Luminescence of zinc oxide nanorods.

Photoluminescence of germanium quantum dots formed by pulsed laser ablation.

Properties of 2D electron gas in AlGaAs/GaAs heterojunctions with thin AlGaAs layers.

Fabrication and photoelectric properties of oxide/CuIn<sub>5</sub>Se<sub>8</sub> heterojunctions.

The effect of surface passivation on the intrinsic photoconductivity of gallium phosphide compensated with copper.

Dielectric function of quasi-2D semiconductor nanostructures.

Computer study of physical properties of silicon nanostructures.

Resonances related to an array of InAs quantum dots and controlled by an external electric field.

Mechanism of the effect of the electric field of a surface acoustic wave on the low-temperature photoluminescence kinetics in type-II GaAs/AlAs superlattices.

Control over carrier lifetime in high-voltage p-i-n diodes based on In<sub>x</sub>Ga<sub>1- x </sub>As/GaAs heterostructures.

Superconducting tunneling-junction detectors of X-ray radiation. Issues concerning the energy resolution.

Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers.

Electron transport and detection of terahertz radiation in a GaN/AlGaN submicrometer field-effect transistor.

EBIC study of resistive photosensitive elements based on HgCdTe.

Silicon photodiode with a grid p-n junction.