Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 12
Results: 14
Nonmonotonic variations in the concentration of the donor-and acceptor-type radiation defects in silicon irradiated with low-intensity fluxes of β particles.
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- Semiconductors, 2006, v. 40, n. 12, p. 1375, doi. 10.1134/S1063782606120013
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- Article
Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-Doped GaN crystals.
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- Semiconductors, 2006, v. 40, n. 12, p. 1378, doi. 10.1134/S1063782606120025
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- Article
Dispersion and instability of drift waves in a fine-layered semiconductor structure.
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- Semiconductors, 2006, v. 40, n. 12, p. 1386, doi. 10.1134/S1063782606120037
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- Article
Properties of the GaSb epitaxial layers obtained by the MOCVD method.
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- Semiconductors, 2006, v. 40, n. 12, p. 1393, doi. 10.1134/S1063782606120049
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- Article
A study of n <sup>+</sup>-6 H/ n-3 C/ p <sup>+</sup>-6 H-SiC heterostructures grown by sublimation epitaxy.
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- Semiconductors, 2006, v. 40, n. 12, p. 1398, doi. 10.1134/S1063782606120050
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- Article
Electric-field effect on the spin-dependent resonance tunneling.
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- Semiconductors, 2006, v. 40, n. 12, p. 1402, doi. 10.1134/S1063782606120062
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- Article
Specific features of 2D electron distribution over the subbands of the quantum well of a single heavily doped heterojunction.
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- Semiconductors, 2006, v. 40, n. 12, p. 1409, doi. 10.1134/S1063782606120074
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- Article
Light-induced metal-insulator transition in n-GaAs/AlGaAs heterostructure: Acoustic methods of study.
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- Semiconductors, 2006, v. 40, n. 12, p. 1415, doi. 10.1134/S1063782606120086
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- Article
Atomic and electronic structure of the silicon and silicon-metal Si<sub>20</sub>, Si, NaSi<sub>20</sub>, KSi<sub>20</sub> nanoparticles.
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- Semiconductors, 2006, v. 40, n. 12, p. 1423, doi. 10.1134/S1063782606120098
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- Article
The effect of a quantizing electric field on the transverse mobility of electrons in a superlattice.
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- Semiconductors, 2006, v. 40, n. 12, p. 1429, doi. 10.1134/S1063782606120104
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- Article
Optical reflection and contactless electroreflection from GaAlAs layers with periodically arranged GaAs quantum wells.
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- Semiconductors, 2006, v. 40, n. 12, p. 1432, doi. 10.1134/S1063782606120116
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- Article
Effect of thermal annealing on the sensitivity of Si-based MOS diodes to reducing gases.
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- Semiconductors, 2006, v. 40, n. 12, p. 1436, doi. 10.1134/S1063782606120128
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- Article
Electrical and photoelectric properties of electrochemically fabricated SnO<sub>2</sub>/Cd<sub>0.4</sub>Zn<sub>0.6</sub>S/CdTe solar cells.
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- Semiconductors, 2006, v. 40, n. 12, p. 1442, doi. 10.1134/S106378260612013X
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The effect of spacer-layer growth temperature on mobility in a two-dimensional electron gas in PHEMT structures.
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- Semiconductors, 2006, v. 40, n. 12, p. 1445, doi. 10.1134/S1063782606120141
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- Article