Nonmonotonic variations in the concentration of the donor-and acceptor-type radiation defects in silicon irradiated with low-intensity fluxes of β particles.

Badylevich, M. V.; Blokhin, I. V.; Golovin, Yu. I.; Dmitrievskiĭ, A. A.; Kartsev, S. V.; Suchkova, N. Yu.; Tolotaev, M. Yu.

Deep-level transient spectroscopy is used to study the dependence of the concentration of the donor-and acceptor-type radiation defects in silicon on the duration of irradiation with low-intensity fluxes of β particles ( I ≈ 9 × 105 cm−2 s−1). It is found that the concentrations of the defects C i , C i -C s , and/or V-O in n-Si and the defects V-B, C i -O i , and/or V 2-O-C in p-Si vary nonmonotonically.

DEEP level transient spectroscopy; IRRADIATION; SILICON; ELECTRON donor-acceptor complexes; ELECTRIC radiation

Semiconductors, 2006, Vol 40, Issue 12, p1375

1063-7826

Academic Journal

10.1134/S1063782606120013