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Title: Nonmonotonic variations in the concentration of the donor-and acceptor-type radiation defects in silicon irradiated with low-intensity fluxes of β particles.
Authors: Badylevich, M. V.; Blokhin, I. V.; Golovin, Yu. I.; Dmitrievskiĭ, A. A.; Kartsev, S. V.; Suchkova, N. Yu.; Tolotaev, M. Yu.
Abstract: Deep-level transient spectroscopy is used to study the dependence of the concentration of the donor-and acceptor-type radiation defects in silicon on the duration of irradiation with low-intensity fluxes of β particles ( I ≈ 9 × 105 cm−2 s−1). It is found that the concentrations of the defects C i , C i -C s , and/or V-O in n-Si and the defects V-B, C i -O i , and/or V 2-O-C in p-Si vary nonmonotonically.
Subjects: DEEP level transient spectroscopy; IRRADIATION; SILICON; ELECTRON donor-acceptor complexes; ELECTRIC radiation
Publication: Semiconductors, 2006, Vol 40, Issue 12, p1375
ISSN: 1063-7826
Publication type: Academic Journal
DOI: 10.1134/S1063782606120013

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Nonmonotonic variations in the concentration of the donor-and acceptor-type radiation defects in silicon irradiated with low-intensity fluxes of β particles.