Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 10
1
- Semiconductors, 2006, v. 40, n. 10, p. 1237, doi. 10.1134/S1063782606100204
- Sankin, V.;
- Shkrebiĭ, P.;
- Lebedev, A.
- Article
2
- Semiconductors, 2006, v. 40, n. 10, p. 1137, doi. 10.1134/S1063782606100034
- Meteleva, Yu.;
- Novikov, G.
- Article
3
- Semiconductors, 2006, v. 40, n. 10, p. 1198, doi. 10.1134/S1063782606100137
- Antonova, I.;
- Gulyaev, M.;
- Yanovitskaya, Z.;
- Volodin, V.;
- Marin, D.;
- Efremov, M.;
- Goldstein, Y.;
- Jedrzejewski, J.
- Article
4
- Semiconductors, 2006, v. 40, n. 10, p. 1218, doi. 10.1134/S1063782606100162
- Burdiyan, I.;
- Senokosov, E.;
- Kosyuk, V.;
- Pynzar’, R.
- Article
5
- Semiconductors, 2006, v. 40, n. 10, p. 1123, doi. 10.1134/S1063782606100010
- Article
6
- Semiconductors, 2006, v. 40, n. 10, p. 1178, doi. 10.1134/S1063782606100101
- Article
7
- Semiconductors, 2006, v. 40, n. 10, p. 1188, doi. 10.1134/S1063782606100113
- Bagaev, E.;
- Zhuravlev, K.;
- Sveshnikova, L.
- Article
8
- Semiconductors, 2006, v. 40, n. 10, p. 1193, doi. 10.1134/S1063782606100125
- Zhigunov, D.;
- Shalygina, O.;
- Teterukov, S.;
- Timoshenko, V.;
- Kashkarov, P.;
- Zacharias, M.
- Article
9
- Semiconductors, 2006, v. 40, n. 10, p. 1232, doi. 10.1134/S1063782606100198
- Blokhin, S.;
- Sakharov, A.;
- Maleev, N.;
- Kuz'menkov, A.;
- Novikov, I.;
- Gordeev, N.;
- Shernyakov, Yu.;
- Maximov, M.;
- Ustinov, V.;
- Kovsh, A.;
- Mikhrin, S.;
- Ledentsov, N.;
- Lee, G.;
- Chi, J.
- Article
10
- Semiconductors, 2006, v. 40, n. 10, p. 1242, doi. 10.1134/S1063782606100216
- Khvostikov, V.;
- Rastegaeva, M.;
- Khvostikova, O.;
- Sorokina, S.;
- Malevskaya, A.;
- Shvarts, M.;
- Andreev, A.;
- Davydov, D.;
- Andreev, V.
- Article
11
- Semiconductors, 2006, v. 40, n. 10, p. 1204, doi. 10.1134/S1063782606100149
- Article
12
- Semiconductors, 2006, v. 40, n. 10, p. 1209, doi. 10.1134/S1063782606100150
- Article
13
- Semiconductors, 2006, v. 40, n. 10, p. 1222, doi. 10.1134/S1063782606100174
- Nechitaĭlov, A.;
- Astrova, E.;
- Kukushkina, Yu.;
- Kameneva, S.
- Article
14
- Semiconductors, 2006, v. 40, n. 10, p. 1227, doi. 10.1134/S1063782606100186
- Ivanov, A.;
- Lebedev, A.;
- Strokan, N.
- Article
15
- Semiconductors, 2006, v. 40, n. 10, p. 1145, doi. 10.1134/S1063782606100046
- Tarbaev, N.;
- Shepel'skii, G.
- Article
16
- Semiconductors, 2006, v. 40, n. 10, p. 1151, doi. 10.1134/S1063782606100058
- Poklonskiĭ, N.;
- Lapchuk, N.;
- Korobko, A.
- Article
17
- Semiconductors, 2006, v. 40, n. 10, p. 1131, doi. 10.1134/S1063782606100022
- Ziminov, A.;
- Ramsh, S.;
- Terukov, E.;
- Trapeznikova, I.;
- Shamanin, V.;
- Yurre, T.
- Article
18
- Semiconductors, 2006, v. 40, n. 10, p. 1173, doi. 10.1134/S1063782606100095
- Blank, T.;
- Gol'dberg, Yu.;
- Konstantinov, O.;
- Nikitin, V.;
- Posse, E.
- Article
19
- Semiconductors, 2006, v. 40, n. 10, p. 1162, doi. 10.1134/S1063782606100071
- Gutkin, A.;
- Brunkov, P.;
- Gladyshev, A.;
- Kryzhanovskaya, N.;
- Bert, N.;
- Konnikov, S.;
- Hopkinson, M.;
- Patané, A.;
- Eaves, L.
- Article
20
- Semiconductors, 2006, v. 40, n. 10, p. 1165, doi. 10.1134/S1063782606100083
- Article
21
- Semiconductors, 2006, v. 40, n. 10, p. 1155, doi. 10.1134/S106378260610006X
- Morozova, N.;
- Karetnikov, I.;
- Mideros, D.;
- Gavrishchuk, E.;
- Ikonnikov, V.
- Article