Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 10
Results: 21
Calculation of the size-distribution function for quantum dots at the kinetic stage of growth.
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- Semiconductors, 2006, v. 40, n. 10, p. 1123, doi. 10.1134/S1063782606100010
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- Article
Concentration-elastic-stress instabilities in the distribution of ions and neutral particles in the insulator layer at the semiconductor surface.
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- Semiconductors, 2006, v. 40, n. 10, p. 1178, doi. 10.1134/S1063782606100101
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Temperature dependence of photoluminescence of CdS nanoclusters formed in the Langmuir-Blodgett film matrix.
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- Semiconductors, 2006, v. 40, n. 10, p. 1188, doi. 10.1134/S1063782606100113
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- Article
Photoluminescence of erbium ions in heterostructures with silicon nanocrystals.
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- Semiconductors, 2006, v. 40, n. 10, p. 1193, doi. 10.1134/S1063782606100125
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Electrical properties and photoluminescence of SiO<sub>x</sub> layers with Si nanocrystals in relation to the SiO<sub>x</sub> composition.
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- Semiconductors, 2006, v. 40, n. 10, p. 1198, doi. 10.1134/S1063782606100137
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- Article
Simulation of capacitance-voltage characteristics of heterostructures with quantum wells using a self-consistent solution of the Schrödinger and Poisson equations.
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- Semiconductors, 2006, v. 40, n. 10, p. 1204, doi. 10.1134/S1063782606100149
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- Article
Nondiffusive weak localization in two-dimensional systems with spin-orbit splitting of the spectrum.
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- Semiconductors, 2006, v. 40, n. 10, p. 1209, doi. 10.1134/S1063782606100150
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- Article
Influence of holmium impurities on photoelectric properties of As<sub>2</sub>Se<sub>3</sub> and (As<sub>2</sub>S<sub>3</sub>)<sub>0.3</sub>(As<sub>2</sub>Se<sub>3</sub>)<sub>0.7</sub>.
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- Semiconductors, 2006, v. 40, n. 10, p. 1218, doi. 10.1134/S1063782606100162
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- Article
Oxidative-gravimetric porosimetry of macroporous silicon.
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- Semiconductors, 2006, v. 40, n. 10, p. 1222, doi. 10.1134/S1063782606100174
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- Article
Effect of extreme radiation fluences on parameters of SiC nuclear particle detectors.
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- Semiconductors, 2006, v. 40, n. 10, p. 1227, doi. 10.1134/S1063782606100186
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Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs.
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- Semiconductors, 2006, v. 40, n. 10, p. 1232, doi. 10.1134/S1063782606100198
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Correlation dependences in infrared spectra of metal phthalocyanines.
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- Semiconductors, 2006, v. 40, n. 10, p. 1131, doi. 10.1134/S1063782606100022
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- Article
The Wannier-Stark effects in the 6 H-SiC planar junction field-effect transistors with a p-n junction as the gate.
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- Semiconductors, 2006, v. 40, n. 10, p. 1237, doi. 10.1134/S1063782606100204
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- Article
High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide.
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- Semiconductors, 2006, v. 40, n. 10, p. 1242, doi. 10.1134/S1063782606100216
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- Article
Fabrication and microwavemicrowave photoconductivity of CdSe semiconductor films.
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- Semiconductors, 2006, v. 40, n. 10, p. 1137, doi. 10.1134/S1063782606100034
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- Article
Two series of “dislocation” photoluminescence bands in cadmium telluride crystals.
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- Semiconductors, 2006, v. 40, n. 10, p. 1145, doi. 10.1134/S1063782606100046
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- Article
Magnetic ordering in crystalline Si implanted with Co ions with intermediate doses.
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- Semiconductors, 2006, v. 40, n. 10, p. 1151, doi. 10.1134/S1063782606100058
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- Article
Investigation of the effect of oxygen on the cathodoluminescence spectra and band gap of the ZnS<sub>x</sub>Se<sub>1- x </sub> alloy.
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- Semiconductors, 2006, v. 40, n. 10, p. 1155, doi. 10.1134/S106378260610006X
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- Article
Optical study of resonant states in GaN<sub> x </sub>As<sub>1− x </sub>.
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- Semiconductors, 2006, v. 40, n. 10, p. 1162, doi. 10.1134/S1063782606100071
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Effect of the levels of intrinsic defects in the CdP<sub>2</sub> band gap on electrical characteristics of corresponding structures with the Schottky barrier.
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- Semiconductors, 2006, v. 40, n. 10, p. 1165, doi. 10.1134/S1063782606100083
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The mechanism of current flow in an alloyed In-GaN ohmic contact.
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- Semiconductors, 2006, v. 40, n. 10, p. 1173, doi. 10.1134/S1063782606100095
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