Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 9

Results: 23

Sensitization of luminescence of wurtzite GaN crystals doped with Eu and the additionally introduced Zn impurity.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1007, doi. 10.1134/S106378260609003X

By:

Krivolapchyuk, V. V.;
Mezdrogina, M. M.;
Kozhanova, Yu. V.;
Rodin, S. N.

Publication type:

Article

Diffusion of chromium in GaAs under equilibrium arsenic-vapor pressure.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 999, doi. 10.1134/S1063782606090016

By:

Khludkov, S. S.;
Koretskaya, O. B.;
Burnashova, G. R.

Publication type:

Article

Charge-carrier transport in annealed coarse-and fine-grained CdTe polycrystals.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1002, doi. 10.1134/S1063782606090028

By:

Klevkov, Yu. V.;
Kolosov, S. A.;
Plotnikov, A. F.

Publication type:

Article

Modification of zinc sulfide phosphors by irradiation with gamma-ray photons and electrons.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1016, doi. 10.1134/S1063782606090041

By:

Sychov, M. M.;
Komarov, E. V.;
Grigor'ev, L. V.;
Myakin, S. V.;
Vasil'eva, I. V.;
Kuznetsov, A. I.;
Usacheva, V. P.

Publication type:

Article

Conductivity of Pb1− x SnxTe:In solid solutions in an ac electric field.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1021, doi. 10.1134/S1063782606090053

By:

Kozhanov, A. E.;
Nikorich, A. V.;
Ryabova, L. I.;
Khokhlov, D. R.

Publication type:

Article

Radiation-stimulated relaxation of internal stresses in homoepitaxial gallium phosphide films.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1025, doi. 10.1134/S1063782606090065

By:

Gentsar, P. A.

Publication type:

Article

Surface-barrier In/ p-CuGa3Te5 and In/ p-CuGa5Te8 structures: Fabrication and properties.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1028, doi. 10.1134/S1063782606090077

By:

Rud', V. Yu.;
Rud', Yu. V.;
Bodnar', I. V.

Publication type:

Article

Tunneling emission of electrons from semiconductors’ valence bands in high electric fields.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1036, doi. 10.1134/S1063782606090089

By:

Kalganov, V. D.;
Mileshkina, N. V.;
Ostroumova, E. V.

Publication type:

Article

Point quantum contacts in disordered Si MOS structures with an inversion p-type channel: Nonlinear behavior of the system in the longitudinal and transverse electric fields.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1043, doi. 10.1134/S1063782606090090

By:

Vedeneev, A. S.;
Feklisov, M. A.

Publication type:

Article

Effect of passivation of the p-CdTe surface in (NH4)2Sx on the current-voltage characteristics of contacts.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1048, doi. 10.1134/S1063782606090107

By:

Klevkov, Yu. V.;
Kolosov, S. A.;
Plotnikov, A. F.

Publication type:

Article

Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1052, doi. 10.1134/S1063782606090119

By:

Ryabchikov, Yu. V.;
Forsh, P. A.;
Lebedev, E. A.;
Timoshenko, V. Yu.;
Kashkarov, P. K.;
Kamenev, B. V.;
Tsybeskov, L.

Publication type:

Article

Mesoscopic fluctuations of conductance in a depleted built-in channel of a MOSFET.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1055, doi. 10.1134/S1063782606090120

By:

Aronzon, B. A.;
Vedeneev, A. S.;
Panferov, A. A.;
Ryl'kov, V. V.

Publication type:

Article

Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1060, doi. 10.1134/S1063782606090132

By:

Klad'ko, V. P.;
Chornen’kii, S. V.;
Naumov, A. V.;
Komarov, A. V.;
Tacano, M.;
Sveshnikov, Yu. N.;
Vitusevich, S. A.;
Belyaev, A. E.

Publication type:

Article

Investigation of electron properties of semiconductor surface by modulation spectroscopy of electroreflection.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1066, doi. 10.1134/S1063782606090144

By:

Gentsar, P. A.;
Vlasenko, A. I.

Publication type:

Article

The role of surface diffusion of adatoms in the formation of nanowire crystals.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1075, doi. 10.1134/S1063782606090168

By:

Dubrovskiĭ, V. G.;
Sibirev, N. V.;
Suris, R. A.;
Cirlin, G. É;
Ustinov, V. M.;
Tchernysheva, M.;
Harmand, J. C.

Publication type:

Article

Circularly polarized photoluminescence related to A(+) centers in GaAs/AlGaAs quantum wells.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1071, doi. 10.1134/S1063782606090156

By:

Petrov, P. V.;
Ivanov, Yu. L.;
Romanov, K. S.;
Tonkikh, A. A.;
Averkiev, N. S.

Publication type:

Article

Properties of the electron spectrum of a closed two-well spherical quantum dot and evolution of the spectrum with the outer-well width.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1083, doi. 10.1134/S106378260609017X

By:

Tkach, N. V.;
Sety, Yu. A.

Publication type:

Article

Spectra of nuclear quadrupole resonance in vitreous semiconductors.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1093, doi. 10.1134/S1063782606090181

By:

Korneva, I. P.;
Sinyavskiĭ, N. Ya.;
Ostafin, M.;
Nogaj, B.

Publication type:

Article

Room-temperature 1.3-μm lasing in a microdisk with quantum dots.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1101, doi. 10.1134/S106378260609020X

By:

Kryzhanovskaya, N. V.;
Blokhin, S. A.;
Gladyshev, A. G.;
Maleev, N. A.;
Kuz’menkov, A. G.;
Arakcheeva, E. M.;
Tanklevskaya, E. M.;
Zhukov, A. E.;
Vasil’ev, A. P.;
Semenova, E. S.;
Maximov, M. V.;
Ledentsov, N. N.;
Ustinov, V. M.;
Stock, E.;
Bimberg, D.

Publication type:

Article

Spectrometric properties of SiC detectors based on ion-implanted p +- n junctions.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1096, doi. 10.1134/S1063782606090193

By:

Kalinina, E. V.;
Kossov, V. G.;
Strokan, N. B.;
Ivanov, A. M.;
Yafaev, R. R.;
Kholuyanov, G. F.

Publication type:

Article

Current-voltage characteristics of Al/SiO2/ p-Si MOS tunnel diodes with a spatially nonuniform oxide thickness.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1109, doi. 10.1134/S1063782606090223

By:

Vexler, M. I.;
Tyaginov, S. E.;
Shulekin, A. F.;
Grekhov, I. V.

Publication type:

Article

Effect of stationary ionization of traps near the midgap on the spectrum of thermally stimulated capacitance of semiconductor devices.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1105, doi. 10.1134/S1063782606090211

By:

Bulyarskiĭ, S. V.;
Zhukov, A. V.;
Svetukhina, O. S.;
Trifonov, O. A.

Publication type:

Article

Two-dimensional simulation of large-area InGaAs/InP p-i-n photodiodes.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1116, doi. 10.1134/S1063782606090235

By:

Malyshev, S.;
Chizh, A.;
Vasileuski, Yu.

Publication type:

Article

Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 9

Sensitization of luminescence of wurtzite GaN crystals doped with Eu and the additionally introduced Zn impurity.

Diffusion of chromium in GaAs under equilibrium arsenic-vapor pressure.

Charge-carrier transport in annealed coarse-and fine-grained CdTe polycrystals.

Modification of zinc sulfide phosphors by irradiation with gamma-ray photons and electrons.

Conductivity of Pb<sub>1− x </sub>Sn<sub>x</sub>Te:In solid solutions in an ac electric field.

Radiation-stimulated relaxation of internal stresses in homoepitaxial gallium phosphide films.

Surface-barrier In/ p-CuGa<sub>3</sub>Te<sub>5</sub> and In/ p-CuGa<sub>5</sub>Te<sub>8</sub> structures: Fabrication and properties.

Tunneling emission of electrons from semiconductors’ valence bands in high electric fields.

Point quantum contacts in disordered Si MOS structures with an inversion p-type channel: Nonlinear behavior of the system in the longitudinal and transverse electric fields.

Effect of passivation of the p-CdTe surface in (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> on the current-voltage characteristics of contacts.

Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix.

Mesoscopic fluctuations of conductance in a depleted built-in channel of a MOSFET.

Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire.

Investigation of electron properties of semiconductor surface by modulation spectroscopy of electroreflection.

The role of surface diffusion of adatoms in the formation of nanowire crystals.

Circularly polarized photoluminescence related to A(+) centers in GaAs/AlGaAs quantum wells.

Properties of the electron spectrum of a closed two-well spherical quantum dot and evolution of the spectrum with the outer-well width.

Spectra of nuclear quadrupole resonance in vitreous semiconductors.

Room-temperature 1.3-μm lasing in a microdisk with quantum dots.

Spectrometric properties of SiC detectors based on ion-implanted p <sup>+</sup>- n junctions.

Current-voltage characteristics of Al/SiO<sub>2</sub>/ p-Si MOS tunnel diodes with a spatially nonuniform oxide thickness.

Effect of stationary ionization of traps near the midgap on the spectrum of thermally stimulated capacitance of semiconductor devices.

Two-dimensional simulation of large-area InGaAs/InP p-i-n photodiodes.