Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 9
Results: 23
Diffusion of chromium in GaAs under equilibrium arsenic-vapor pressure.
- Published in:
- Semiconductors, 2006, v. 40, n. 9, p. 999, doi. 10.1134/S1063782606090016
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- Article
Charge-carrier transport in annealed coarse-and fine-grained CdTe polycrystals.
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- Semiconductors, 2006, v. 40, n. 9, p. 1002, doi. 10.1134/S1063782606090028
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- Article
Sensitization of luminescence of wurtzite GaN crystals doped with Eu and the additionally introduced Zn impurity.
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- Semiconductors, 2006, v. 40, n. 9, p. 1007, doi. 10.1134/S106378260609003X
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- Article
Investigation of electron properties of semiconductor surface by modulation spectroscopy of electroreflection.
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- Semiconductors, 2006, v. 40, n. 9, p. 1066, doi. 10.1134/S1063782606090144
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- Article
Conductivity of Pb<sub>1− x </sub>Sn<sub>x</sub>Te:In solid solutions in an ac electric field.
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- Semiconductors, 2006, v. 40, n. 9, p. 1021, doi. 10.1134/S1063782606090053
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- Article
Radiation-stimulated relaxation of internal stresses in homoepitaxial gallium phosphide films.
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- Semiconductors, 2006, v. 40, n. 9, p. 1025, doi. 10.1134/S1063782606090065
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- Article
Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire.
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- Semiconductors, 2006, v. 40, n. 9, p. 1060, doi. 10.1134/S1063782606090132
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- Article
Surface-barrier In/ p-CuGa<sub>3</sub>Te<sub>5</sub> and In/ p-CuGa<sub>5</sub>Te<sub>8</sub> structures: Fabrication and properties.
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- Semiconductors, 2006, v. 40, n. 9, p. 1028, doi. 10.1134/S1063782606090077
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- Article
Modification of zinc sulfide phosphors by irradiation with gamma-ray photons and electrons.
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- Semiconductors, 2006, v. 40, n. 9, p. 1016, doi. 10.1134/S1063782606090041
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- Article
Circularly polarized photoluminescence related to A(+) centers in GaAs/AlGaAs quantum wells.
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- Semiconductors, 2006, v. 40, n. 9, p. 1071, doi. 10.1134/S1063782606090156
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- Article
Properties of the electron spectrum of a closed two-well spherical quantum dot and evolution of the spectrum with the outer-well width.
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- Semiconductors, 2006, v. 40, n. 9, p. 1083, doi. 10.1134/S106378260609017X
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- Article
Point quantum contacts in disordered Si MOS structures with an inversion p-type channel: Nonlinear behavior of the system in the longitudinal and transverse electric fields.
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- Semiconductors, 2006, v. 40, n. 9, p. 1043, doi. 10.1134/S1063782606090090
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- Article
Tunneling emission of electrons from semiconductors’ valence bands in high electric fields.
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- Semiconductors, 2006, v. 40, n. 9, p. 1036, doi. 10.1134/S1063782606090089
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- Article
Effect of stationary ionization of traps near the midgap on the spectrum of thermally stimulated capacitance of semiconductor devices.
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- Semiconductors, 2006, v. 40, n. 9, p. 1105, doi. 10.1134/S1063782606090211
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- Article
Effect of passivation of the p-CdTe surface in (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> on the current-voltage characteristics of contacts.
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- Semiconductors, 2006, v. 40, n. 9, p. 1048, doi. 10.1134/S1063782606090107
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- Article
Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix.
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- Semiconductors, 2006, v. 40, n. 9, p. 1052, doi. 10.1134/S1063782606090119
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- Article
Mesoscopic fluctuations of conductance in a depleted built-in channel of a MOSFET.
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- Semiconductors, 2006, v. 40, n. 9, p. 1055, doi. 10.1134/S1063782606090120
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- Article
Spectra of nuclear quadrupole resonance in vitreous semiconductors.
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- Semiconductors, 2006, v. 40, n. 9, p. 1093, doi. 10.1134/S1063782606090181
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- Article
Spectrometric properties of SiC detectors based on ion-implanted p <sup>+</sup>- n junctions.
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- Semiconductors, 2006, v. 40, n. 9, p. 1096, doi. 10.1134/S1063782606090193
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- Article
Room-temperature 1.3-μm lasing in a microdisk with quantum dots.
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- Semiconductors, 2006, v. 40, n. 9, p. 1101, doi. 10.1134/S106378260609020X
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- Article
The role of surface diffusion of adatoms in the formation of nanowire crystals.
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- Semiconductors, 2006, v. 40, n. 9, p. 1075, doi. 10.1134/S1063782606090168
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- Article
Current-voltage characteristics of Al/SiO<sub>2</sub>/ p-Si MOS tunnel diodes with a spatially nonuniform oxide thickness.
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- Semiconductors, 2006, v. 40, n. 9, p. 1109, doi. 10.1134/S1063782606090223
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- Article
Two-dimensional simulation of large-area InGaAs/InP p-i-n photodiodes.
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- Semiconductors, 2006, v. 40, n. 9, p. 1116, doi. 10.1134/S1063782606090235
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- Article