Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 8

Results: 19

Influence of the electron-hole equilibrium shift on transition-metal diffusion in GaAs.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 869, doi. 10.1134/S106378260608001X
By:
- Khludkov, S. S.
Publication type:
Article
The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 875, doi. 10.1134/S1063782606080021
By:
- Aleksandrov, O. V.
Publication type:
Article
Planar lateral crystallization of the cobalt-silicide phase on silicon surface.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 881, doi. 10.1134/S1063782606080033
By:
- Belousov, I. V.;
- Kuznetsov, G. V.;
- Pchelyakov, O. P.
Publication type:
Article
The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 884, doi. 10.1134/S1063782606080045
By:
- Sachenko, A. V.;
- Gorban, A. P.;
- Kostylyov, V. P.;
- Sokolovsky, I. O.
Publication type:
Article
Effect of irradiation temperature on the efficiency of introduction of multivacancy defects into n-Si crystals.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 890, doi. 10.1134/S1063782606080057
By:
- Pagava, T. A.
Publication type:
Article
Stabilization of the fermi level by a resonant gallium level in Pb1− x SnxTe alloys.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 893, doi. 10.1134/S1063782606080069
By:
- Skipetrov, E. P.;
- Zvereva, E. A.;
- Dmitriev, N. N.;
- Golubev, A. V.;
- Slynko, V. E.
Publication type:
Article
Detection of singly ionized state of two-electron tin centers with negative correlation energy in Pb1- x SnxS alloys.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 898, doi. 10.1134/S1063782606080070
By:
- Castro, R. A.;
- Nemov, S. A.;
- Seregin, P. P.
Publication type:
Article
Specific features of transmutational doping of 30Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 901, doi. 10.1134/S1063782606080082
By:
- Baranov, P. G.;
- Ber, B. Ya.;
- Godisov, O. N.;
- Il'in, I. V.;
- Ionov, A. N.;
- Kaliteevskiĭ, A. K.;
- Kaliteevskiĭ, M. A.;
- Lazebnik, I. M.;
- Safronov, A. Yu.;
- Pohl, H.-J.;
- Riemann, H.;
- Abrosimov, N. V.;
- Kop'ev, P. S.;
- Bulanov, A. D.;
- Gusev, A. V.
Publication type:
Article
Characteristics of the oxide- p-InSe heterojunctions exposed to irradiation with X-ray photons.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 911, doi. 10.1134/S1063782606080094
By:
- Kovalyuk, Z. D.;
- Katerynchuk, V. N.;
- Politanska, O. A.;
- Raransky, N. D.
Publication type:
Article
Effect of fast annealing on the electrical properties of SiO2/Si structures with thin layers of anodic silicon oxide.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 915, doi. 10.1134/S1063782606080100
By:
- Baranov, I. L.;
- Tabulina, L V..;
- Stanovaya, L. S.;
- Rusalskaya, T. G.
Publication type:
Article
Tunneling and impact ionization in thin-film ZnS:Mn-based electroluminescent structures.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 920, doi. 10.1134/S1063782606080112
By:
- Gurin, N. T.;
- Afanas'ev, A. M.;
- Sabitov, O. Yu.;
- Ryabov, D. V.
Publication type:
Article
Contributions of the interior and surface states of charge carriers to the emission spectra of CdS quantum dots in borosilicate glasses.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 934, doi. 10.1134/S1063782606080124
By:
- Bondar, N. V.;
- Brodyn, M. S.;
- Tel'biz, G. M.
Publication type:
Article
Excitonic photoluminescence of silicon quantum-well structures.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 941, doi. 10.1134/S1063782606080136
By:
- Sachenko, A. V..;
- Korbutyak, D. V.;
- Kryuchenko, Yu. V.;
- Kupchak, I. M.
Publication type:
Article
Electric-field-controlled effects of spatial recurrence and multiplication of electron waves in two-dimensional semiconductor nanostructures.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 949, doi. 10.1134/S1063782606080148
By:
- Petrov, V. A.;
- Nikitin, A. V.
Publication type:
Article
Low-temperature materials and thin-film transistors for electronics on flexible substrates.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 959, doi. 10.1134/S106378260608015X
By:
- Sazonov, A.;
- Meitine, M.;
- Stryakhilev, D.;
- Nathan, A.
Publication type:
Article
Specific features of anisotropic optical thermoelements.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 968, doi. 10.1134/S1063782606080161
By:
- Ashcheulov, A. A.;
- Gutsul, I. V.
Publication type:
Article
InAs flip-chip LEDs with InGaAsSb buffer layers.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 977, doi. 10.1134/S1063782606080173
By:
- Zotova, N. V.;
- Il'inskaya, N. D.;
- Karandashev, S. A.;
- Matveev, B. A.;
- Remennyĭ, M. A.;
- Stus’, N. M.;
- Shustov, V. V.;
- Tarakanova, N. G.
Publication type:
Article
Kelvin probe force microscopy of hole leakage from the active region of a working injection-type semiconductor laser diode.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 982, doi. 10.1134/S1063782606080185
By:
- Ankudinov, A. V.;
- Evtikhiev, V. P.;
- Ladutenko, K. S.;
- Titkov, A. N.;
- Laiho, R.
Publication type:
Article
Finite time of carrier energy relaxation as a cause of optical-power limitation in semiconductor lasers.
Published in:
Semiconductors, 2006, v. 40, n. 8, p. 990, doi. 10.1134/S1063782606080197
By:
- Slipchenko, S. O.;
- Sokolova, Z. N.;
- Pikhtin, N. A.;
- Borschev, K. S.;
- Vinokurov, D. A.;
- Tarasov, I. S.
Publication type:
Article

Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 8

Influence of the electron-hole equilibrium shift on transition-metal diffusion in GaAs.

The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation.

Planar lateral crystallization of the cobalt-silicide phase on silicon surface.

The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon.

Effect of irradiation temperature on the efficiency of introduction of multivacancy defects into n-Si crystals.

Stabilization of the fermi level by a resonant gallium level in Pb<sub>1− x </sub>Sn<sub>x</sub>Te alloys.

Detection of singly ionized state of two-electron tin centers with negative correlation energy in Pb<sub>1- x </sub>Sn<sub>x</sub>S alloys.

Specific features of transmutational doping of <sup>30</sup>Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance.

Characteristics of the oxide- p-InSe heterojunctions exposed to irradiation with X-ray photons.

Effect of fast annealing on the electrical properties of SiO<sub>2</sub>/Si structures with thin layers of anodic silicon oxide.

Tunneling and impact ionization in thin-film ZnS:Mn-based electroluminescent structures.

Contributions of the interior and surface states of charge carriers to the emission spectra of CdS quantum dots in borosilicate glasses.

Excitonic photoluminescence of silicon quantum-well structures.

Electric-field-controlled effects of spatial recurrence and multiplication of electron waves in two-dimensional semiconductor nanostructures.

Low-temperature materials and thin-film transistors for electronics on flexible substrates.

Specific features of anisotropic optical thermoelements.

InAs flip-chip LEDs with InGaAsSb buffer layers.

Kelvin probe force microscopy of hole leakage from the active region of a working injection-type semiconductor laser diode.

Finite time of carrier energy relaxation as a cause of optical-power limitation in semiconductor lasers.