Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 7

Results: 23

Preparation and optical properties of Co-doped ZnSe single crystals.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 794, doi. 10.1134/S1063782606070104

By:

Vaksman, Yu.F.;
Pavlov, V.V.;
Nitsuk, Yu.A.;
Purtov, Yu.N.;
Nasibov, A.S.;
Shapkin, P.V.

Publication type:

Article

Mechanism of nucleation of oriented cadmium telluride films forming under highly nonequilibrium conditions.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 770, doi. 10.1134/S1063782606070050

By:

Belyaev, A.P.;
Rubets, V.P.;
Antipov, V.V.

Publication type:

Article

Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 758, doi. 10.1134/S1063782606070025

By:

Boĭtsov, A.V.;
Bert, N.A.;
Musikhin, Yu.G.;
Chaldyshev, V.V.;
Yagovkina, M.A.;
Preobrazhenskiĭ, V.V.;
Putyato, M.A.;
Semyagin, B.R.

Publication type:

Article

Diffusion ZnTe:Sn layers with n-type conductivity.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 774, doi. 10.1134/S1063782606070062

By:

Makhny, V.P.;
Grivul, V.I.

Publication type:

Article

Variation in electrical properties of the Cd1 − x ZnxTe crystals as a result of heat treatment.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 781, doi. 10.1134/S1063782606070086

By:

Nikoniuk, E.S.;
Zakharuk, Z.I.;
Rybak, E.V.;
Dremlyuzhenko, S.G.;
Schlyakhovyi, V.L.;
Kovalets, M.A.

Publication type:

Article

Structural changes induced by neutron irradiation and heat treatments in InSb single crystals.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 749, doi. 10.1134/S1063782606070013

By:

Boĭko, V.M.;
Bublik, V.T.;
Voronova, M.I.;
Kolin, N.G.;
Merkurisov, D.I.;
Shcherbachev, K.D.

Publication type:

Article

Ultrafast self-modulation of the optical absorption spectrum under conditions of both the ultrashort optical pumping and superluminescence in GaAs.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 785, doi. 10.1134/S1063782606070098

By:

Ageeva, N.N.;
Bronevoĭ, I.L.;
Krivonosov, A.N.;
Stegantsov, S.V.

Publication type:

Article

Thermal conductivity of doped PbTe-based solid solutions with off-center impurities.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 763, doi. 10.1134/S1063782606070037

By:

Gurieva, E.A.;
Konstantinov, P.P.;
Prokof, L.V;
Pshenaĭ-Severin, D.A.;
Fedorov, M.I.;
Ravich, Yu.I.

Publication type:

Article

Diffusion of yittrium in silicon.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 768, doi. 10.1134/S1063782606070049

By:

Nazyrov, D.É;
Bazarbaev, M.I.;
Iminov, A.A.

Publication type:

Article

The effect of high magnetic field on the photoresponse of Si:B structures with blocked conductivity in the impurity band.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 798, doi. 10.1134/S1063782606070116

By:

Aronzon, B.A.;
Drachenko, A.N.;
Ryl’kov, V.V.;
Leotin, J.

Publication type:

Article

Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo1– x NixSb semiconductor alloy is varied. Donor impurities.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 776, doi. 10.1134/S1063782606070074

By:

Romaka, V.A.;
Shelyapina, M.G.;
Stadnyk, Yu.V.;
Fruchart, D.;
Romaka, L.P.;
Chekurin, V.F.

Publication type:

Article

Negative capacitance (impedance of the inductive type) of silicon p +- n junctions irradiated with fast electrons.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 803, doi. 10.1134/S1063782606070128

By:

Poklonski, N.A.;
Shpakovski, S.V.;
Gorbachuk, N.I.;
Lastovskii, S.B.

Publication type:

Article

Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 839, doi. 10.1134/S1063782606070190

By:

Rozhansky, I.V.;
Zakheim, D.A

Publication type:

Article

Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 846, doi. 10.1134/S1063782606070207

By:

Kuznetsov, V.P.;
Remizov, D.Yu.;
Shabanov, V.N.;
Rubtsova, R.A.;
Stepikhova, M.V.;
Kryzhov, D.I.;
Shushunov, A.N.;
Belova, O.V.;
Krasil’nik, Z.F.;
Maksimov, G.A.

Publication type:

Article

Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 808, doi. 10.1134/S106378260607013X

By:

Parchinskiĭ, P.B.;
Vlasov, S.I.;
Ligaĭ, L.G.

Publication type:

Article

Higher harmonics in the current oscillations in weakly coupled GaAs/AlGaAs superlattices.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 825, doi. 10.1134/S1063782606070165

By:

Rasulova, G.K.;
Brunkov, N.P.;
Zhukov, A.E.;
Ustinov, V.M.

Publication type:

Article

Spectral ellipsometry of a nanodiamond composite.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 829, doi. 10.1134/S1063782606070177

By:

Yastrebov, S.G.;
Gordeev, S.K.;
Garriga, M.;
Alonso, I.A.;
Ivanov-Omskiĭ, V.I.

Publication type:

Article

Infrared and submillimeter spectroscopy of grooved silicon structures.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 834, doi. 10.1134/S1063782606070189

By:

Krutkova, E.Yu.;
Timoshenko, V.Yu.;
Golovan, L.A.;
Kashkarov, P.K.;
Astrova, E.V.;
Perova, T.S.;
Gorshunov, B.P.;
Volkov, A.A.

Publication type:

Article

Optical studies of a two-dimensional photonic crystal with the InAs/InGaAs quantum-dot structure as an active region.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 812, doi. 10.1134/S1063782606070141

By:

Blokhin, S.A.;
Usov, O.A.;
Nashchekin, A.V.;
Arakcheeva, E.M.;
Tanklevskaya, E.M.;
Konnikov, S.G.;
Zhukov, A.E.;
Maksimov, M.V.;
Ledentsov, N.N.;
Ustinov, V.M.

Publication type:

Article

The effect of photon energy and temperature on the persistent tunneling photoconductivity effect in Al/δ(Si)-GaAs structures.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 818, doi. 10.1134/S1063782606070153

By:

Kotel’nikov, I.N.;
Dizhur, S.E.;
Feiginov, M.N.;
Mordovets, N.A.

Publication type:

Article

Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 854, doi. 10.1134/S1063782606070219

By:

Arsent’ev, I.N.;
Bobyl’, A.V.;
Borkovskaya, O.Yu.;
Vinokurov, D.A.;
Dmitruk, N.L.;
Karimov, A.V.;
Klad’ko, V.P.;
Konakova, R.V.;
Konnikov, S.G.;
Mamontova, I.B.

Publication type:

Article

Electroluminescence in the region of interband transitions in a high-efficiency silicon light-emitting diode with a small area of the rectifying contact.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 860, doi. 10.1134/S1063782606070220

By:

Emel’yanov, A.M.;
Zabrodskiĭ, V.V.;
Zabrodskaya, N.V;
Sobolev, N.A;
Sukhanov, V.L.

Publication type:

Article

Carrier transport in a SiC detector subjected to extreme radiation doses.

Published in:

Semiconductors, 2006, v. 40, n. 7, p. 864, doi. 10.1134/S1063782606070232

By:

Ivanov, A.M.;
Lebedev, A.A.;
Strokan, N.B.

Publication type:

Article

Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 7

Preparation and optical properties of Co-doped ZnSe single crystals.

Mechanism of nucleation of oriented cadmium telluride films forming under highly nonequilibrium conditions.

Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature.

Diffusion ZnTe:Sn layers with n-type conductivity.

Variation in electrical properties of the Cd<sub>1 − x </sub>Zn<sub>x</sub>Te crystals as a result of heat treatment.

Structural changes induced by neutron irradiation and heat treatments in InSb single crystals.

Ultrafast self-modulation of the optical absorption spectrum under conditions of both the ultrashort optical pumping and superluminescence in GaAs.

Thermal conductivity of doped PbTe-based solid solutions with off-center impurities.

Diffusion of yittrium in silicon.

The effect of high magnetic field on the photoresponse of Si:B structures with blocked conductivity in the impurity band.

Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo<sub>1– x </sub>Ni<sub>x</sub>Sb semiconductor alloy is varied. Donor impurities.

Negative capacitance (impedance of the inductive type) of silicon p <sup>+</sup>- n junctions irradiated with fast electrons.

Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density.

Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy.

Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface.

Higher harmonics in the current oscillations in weakly coupled GaAs/AlGaAs superlattices.

Spectral ellipsometry of a nanodiamond composite.

Infrared and submillimeter spectroscopy of grooved silicon structures.

Optical studies of a two-dimensional photonic crystal with the InAs/InGaAs quantum-dot structure as an active region.

The effect of photon energy and temperature on the persistent tunneling photoconductivity effect in Al/δ(Si)-GaAs structures.

Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area.

Electroluminescence in the region of interband transitions in a high-efficiency silicon light-emitting diode with a small area of the rectifying contact.

Carrier transport in a SiC detector subjected to extreme radiation doses.