Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 4
Results: 22
Simulation of aluminum diffusion in silicon in inert and oxidizing media.
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- Semiconductors, 2006, v. 40, n. 4, p. 379, doi. 10.1134/S1063782606040014
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- Article
The correlation between the surface-energy minima and the shape of self-induced SiGe nanoislands.
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- Semiconductors, 2006, v. 40, n. 4, p. 385, doi. 10.1134/S1063782606040026
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- Article
Specific features of the spectra of nonlinear optical absorption in nonstoichiometric and Ni doped GaSe single crystals.
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- Semiconductors, 2006, v. 40, n. 4, p. 391, doi. 10.1134/S1063782606040038
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- Article
The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors.
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- Semiconductors, 2006, v. 40, n. 4, p. 394, doi. 10.1134/S106378260604004X
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- Article
Photoconductivity and luminescence of CuInSe<sub>2</sub> single crystals at a high level of optical excitation.
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- Semiconductors, 2006, v. 40, n. 4, p. 401, doi. 10.1134/S1063782606040051
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- Article
The temporal and spatial instability of photoelectric response of the CdZnTe crystals.
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- Semiconductors, 2006, v. 40, n. 4, p. 403, doi. 10.1134/S1063782606040063
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- Article
Infrared reflectance spectra and morphologic features of the surface of epitaxial Al<sub>x</sub>Ga<sub>1− x </sub>As/GaAs(100) heterostructures with the ordered AlGaAs<sub>2</sub> phase.
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- Semiconductors, 2006, v. 40, n. 4, p. 406, doi. 10.1134/S1063782606040075
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- Article
Effect of copper ion implantation on the optical properties and low-temperature conductivity of carbon films.
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- Semiconductors, 2006, v. 40, n. 4, p. 414, doi. 10.1134/S1063782606040087
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- Article
Special features of photoluminescence in silicon-on-insulator structures implanted with hydrogen ions.
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- Semiconductors, 2006, v. 40, n. 4, p. 420, doi. 10.1134/S1063782606040099
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- Article
Energy spectrum and magnetooptical properties of a D <sup>(−)</sup> center in a quantum constriction.
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- Semiconductors, 2006, v. 40, n. 4, p. 427, doi. 10.1134/S1063782606040105
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- Article
Spin splitting and electron g-factor of an excited quantum confinement subband.
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- Semiconductors, 2006, v. 40, n. 4, p. 433, doi. 10.1134/S1063782606040117
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- Article
Quasi-hydrodynamic simulation of the conductivity of heavily doped nanosize layered heterostructures in high electric fields.
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- Semiconductors, 2006, v. 40, n. 4, p. 440, doi. 10.1134/S1063782606040129
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- Article
Photoluminescence of nanocrystalline silicon films formed by pulsed laser-assisted deposition with the introduction of carbon.
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- Semiconductors, 2006, v. 40, n. 4, p. 443, doi. 10.1134/S1063782606040130
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- Article
Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 μm.
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- Semiconductors, 2006, v. 40, n. 4, p. 449, doi. 10.1134/S1063782606040142
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- Article
Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy.
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- Semiconductors, 2006, v. 40, n. 4, p. 454, doi. 10.1134/S1063782606040154
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- Article
Influence of interface growth steps on the anisotropy of excitonic emission in ZnCdSe/ZnSe quantum wells.
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- Semiconductors, 2006, v. 40, n. 4, p. 459, doi. 10.1134/S1063782606040166
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- Article
Lithium intercalation into amorphous silicon thin films.
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- Semiconductors, 2006, v. 40, n. 4, p. 468, doi. 10.1134/S1063782606040178
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- Article
Alternating current conductivity of anisotropically nanostructured silicon.
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- Semiconductors, 2006, v. 40, n. 4, p. 471, doi. 10.1134/S106378260604018X
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- Article
Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation.
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- Semiconductors, 2006, v. 40, n. 4, p. 476, doi. 10.1134/S1063782606040191
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- Article
Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers.
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- Semiconductors, 2006, v. 40, n. 4, p. 481, doi. 10.1134/S1063782606040208
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- Article
Parametric optimization of the Bragg reflectors in a laser with the vertical cavity and nonlinear frequency conversion.
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- Semiconductors, 2006, v. 40, n. 4, p. 486, doi. 10.1134/S106378260604021X
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- Article
A MOS tunnel emitter transistor as a tool for determining the effective hole mass in a thin film of SiO<sub>2</sub>.
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- Semiconductors, 2006, v. 40, n. 4, p. 491, doi. 10.1134/S1063782606040221
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