Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 3
Results: 22
The theory of the formation of multilayered thin films on solid surfaces.
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- Semiconductors, 2006, v. 40, n. 3, p. 249, doi. 10.1134/S1063782606030018
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Surface acoustic breathers in semiconductors.
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- Semiconductors, 2006, v. 40, n. 3, p. 257, doi. 10.1134/S106378260603002X
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Nonlinear longitudinal waves of interacting fields of deformation and defect concentration in germanium and silicon.
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- Semiconductors, 2006, v. 40, n. 3, p. 262, doi. 10.1134/S1063782606030031
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Island size distribution under conditions of dislocation-surface diffusion in semiconductor heterostructures.
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- Semiconductors, 2006, v. 40, n. 3, p. 270, doi. 10.1134/S1063782606030043
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Band gap and optical properties of the Cd<sub>x</sub>Hg<sub>1 − x − y </sub>Zn<sub>y</sub>Te alloys in ultraviolet and visible spectral regions.
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- Semiconductors, 2006, v. 40, n. 3, p. 276, doi. 10.1134/S1063782606030055
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Laser-stimulated compensation of bulk defects in p-CdZnTe.
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- Semiconductors, 2006, v. 40, n. 3, p. 282, doi. 10.1134/S1063782606030067
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Conductivity of charge-ordered layered crystals in quantizing magnetic fields in the inversion region of the nonoscillating magnetoresistance component.
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- Semiconductors, 2006, v. 40, n. 3, p. 291, doi. 10.1134/S1063782606030079
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On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface.
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- Semiconductors, 2006, v. 40, n. 3, p. 299, doi. 10.1134/S1063782606030080
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A model of the conductivity of p-type polycrystalline silicon with regard to current spreading in crystallites.
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- Semiconductors, 2006, v. 40, n. 3, p. 302, doi. 10.1134/S1063782606030092
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- Article
Influence of insulator thickness nonuniformity on the switching of the Al/SiO<sub>2</sub>/ n-Si tunnel MOS structure at reverse bias.
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- Semiconductors, 2006, v. 40, n. 3, p. 309, doi. 10.1134/S1063782606030109
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Formation of defects in GaAs and Si as a result of Pd deposition onto the surface.
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- Semiconductors, 2006, v. 40, n. 3, p. 314, doi. 10.1134/S1063782606030110
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Origination of misfit dislocations at the surface during the growth of GeSi/Si(001) films by low-temperature (300–400°C) molecular-beam epitaxy.
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- Semiconductors, 2006, v. 40, n. 3, p. 319, doi. 10.1134/S1063782606030122
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Spectral sensitivity of p-Cu<sub>1.8</sub>S/ n <sup>−</sup>-ZnS/ n-(II-VI) heterostructures.
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- Semiconductors, 2006, v. 40, n. 3, p. 327, doi. 10.1134/S1063782606030134
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Coupling of electron states in the InAs/GaAs quantum dot molecule.
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- Semiconductors, 2006, v. 40, n. 3, p. 331, doi. 10.1134/S1063782606030146
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Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si<sub>1− x </sub>Ge<sub>x</sub> layer.
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- Semiconductors, 2006, v. 40, n. 3, p. 338, doi. 10.1134/S1063782606030158
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InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4–1.8 μm.
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- Semiconductors, 2006, v. 40, n. 3, p. 342, doi. 10.1134/S106378260603016X
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Thermophotovoltaic cells based on In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP heterostructures.
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- Semiconductors, 2006, v. 40, n. 3, p. 346, doi. 10.1134/S1063782606030171
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The flip-chip InGaAsSb/GaSb LEDs emitting at a wavelength of 1.94 μm.
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- Semiconductors, 2006, v. 40, n. 3, p. 351, doi. 10.1134/S1063782606030183
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A large enhancement of the maximum drift velocity of electrons in the channel of a field-effect heterotransistor.
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- Semiconductors, 2006, v. 40, n. 3, p. 357, doi. 10.1134/S1063782606030195
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A quantum-dot heterostructure transistor with enhanced maximum drift velocity of electrons.
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- Semiconductors, 2006, v. 40, n. 3, p. 362, doi. 10.1134/S1063782606030201
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The role of one-dimensional diffusion in a growth model of the surface of a Kossel’s crystal.
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- Semiconductors, 2006, v. 40, n. 3, p. 367, doi. 10.1134/S1063782606030213
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Determination of the coefficient of light attenuation in thin layers of light-emitting diodes.
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- Semiconductors, 2006, v. 40, n. 3, p. 375, doi. 10.1134/S1063782606030225
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