Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 2

Results: 23

The effect of the hydrogen state in lattice on the introduction efficiency of donor centers in oxygen-containing silicon.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 125, doi. 10.1134/S1063782606020011
By:
- Bolotov, V. V.;
- Kamaev, G. N.;
- Noskov, A. V.;
- Chernyaev, S. A.;
- Roslikov, V. E.
Publication type:
Article
Stability of the photoresponse of Cd1− x ZnxTe crystals.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 128, doi. 10.1134/S1063782606020023
By:
- Komar, V. K.;
- Mygal, V. P.;
- Sulima, S. V.;
- Phomin, A. S.
Publication type:
Article
Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 131, doi. 10.1134/S1063782606020035
By:
- Romaka, V. A.;
- Stadnyk, Yu. V.;
- Shelyapina, M. G.;
- Fruchart, D.;
- Chekurin, V. F.;
- Romaka, L. P.;
- Gorelenko, Yu. K.
Publication type:
Article
Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 137, doi. 10.1134/S1063782606020047
By:
- Bletskan, D. I.;
- Madyar, J. J.;
- Kabaciy, V. N.
Publication type:
Article
Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 143, doi. 10.1134/S1063782606020059
By:
- Parfenyuk, O. A.;
- Ilashchuk, M. I.;
- Ulyanitskiĭ, K. S.;
- Fochuk, P. M.;
- Strilchuk, O. M.;
- Krylyuk, S. G.;
- Korbutyak, D. V.
Publication type:
Article
Morphology, twinning, and photoluminescence of ZnTe crystals grown by chemical synthesis from vapor-phase components.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 148, doi. 10.1134/S1063782606020060
By:
- Klevkov, Yu. V.;
- Martovitskiĭ, V. P.;
- Bagaev, V. S.;
- Krivobok, V. S.
Publication type:
Article
Monte Carlo simulation of the Dember effect in n-InAs exposed to femtosecond pulse laser excitation.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 155, doi. 10.1134/S1063782606020072
By:
- Malevich, V. L.
Publication type:
Article
Scattering of conduction electrons at a spatially correlated system of charges in a heavily doped GaAs: Te semiconductor.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 161, doi. 10.1134/S1063782606020084
By:
- Bogdanova, V. A.;
- Davletkil’deev, N. A.;
- Semikolenova, N. A.;
- Sidorov, E. N.
Publication type:
Article
Photosensitivity of Pb1− x SnxTe:In films in the terahertz region of the spectrum.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 164, doi. 10.1134/S1063782606020096
By:
- Akimov, A. N.;
- Erkov, V. G.;
- Kubarev, V. V.;
- Molodtsova, E. L.;
- Klimov, A. É.;
- Shumskiĭ, V. N.
Publication type:
Article
Conduction mechanisms of magnetic semiconductors with a garnet structure in relation to variable-valence impurity concentration.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 169, doi. 10.1134/S1063782606020102
By:
- Bulatov, M. F.;
- Parkhomenko, Yu. N.
Publication type:
Article
A mechanism of variation in the electrical properties of polycrystalline p-PbSe films as a result of irradiation with α particles.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 172, doi. 10.1134/S1063782606020114
By:
- Saliĭ, Ya. P.
Publication type:
Article
A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 175, doi. 10.1134/S1063782606020126
By:
- Evtukh, A. A.;
- Kaganovich, É. B.;
- Manoĭlov, É. G.;
- Semenenko, N. A.
Publication type:
Article
Dynamics of the defects recharging in coarse-grained p-CdTe films.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 180, doi. 10.1134/S1063782606020138
By:
- Ismailov, Kh. kH.;
- Zhanabergenov, Zh.;
- Mirsagatov, Sh. A.;
- Karazhanov, S. Zh.
Publication type:
Article
Methods for the doping of silicon layers in growth by sublimation MBE.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 183, doi. 10.1134/S106378260602014X
By:
- Shengurov, V. G.;
- Svetlov, S. P.;
- Chalkov, V. Yu.;
- Shengurov, D. V.;
- Denisov, S. A.
Publication type:
Article
A manifestation of the tunneling conductivity of a thin-gate insulator in the generation kinetics of minority carriers in metal-insulator-semiconductor structures.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 190, doi. 10.1134/S1063782606020151
By:
- Zhdan, A. G.;
- Chucheva, G. V.;
- Goldman, E. I.
Publication type:
Article
Properties of the CuInS2 surface and the effect of organic layers.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 197, doi. 10.1134/S1063782606020163
By:
- Verbitskiĭ, A. B.;
- Vertsimakha, Ya. I.;
- Lutsyk, P. N.;
- Studzinskiĭ, S. L.;
- Bereznev, S.;
- Kois, J.
Publication type:
Article
Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 202, doi. 10.1134/S1063782606020175
By:
- Volodin, V. A.;
- Yakimov, A. I.;
- Dvurechenskiĭ, A. V.;
- Efremov, M. D.;
- Nikiforov, A. I.;
- Gatskevich, E. I.;
- Ivlev, G. D.;
- Mikhalev, G. Yu.
Publication type:
Article
Persistent IR photoconductivity in InAs/GaAs structures with QD layers.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 210, doi. 10.1134/S1063782606020187
By:
- Kul'bachinskiĭ, V. A.;
- Rogozin, V. A.;
- Kytin, V. G.;
- Lunin, R. A.;
- Zvonkov, B. N.;
- Dashevsky, Z. M.;
- Casian, V. A.
Publication type:
Article
Optical absorption and scattering at one-particle states of charge carriers in semiconductor quantum dots.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 217, doi. 10.1134/S1063782606020199
By:
- Pokutniĭ, S. I.
Publication type:
Article
The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 224, doi. 10.1134/S1063782606020205
By:
- Sibirev, N. V.;
- Talalaev, V. G.;
- Tonkikh, A. A.;
- Cirlin, G. E.;
- Dubrovskiĭ, V. G.;
- Zakharov, N. D.;
- Werner, P.
Publication type:
Article
Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 229, doi. 10.1134/S1063782606020217
By:
- Vostokov, N. V.;
- Drozdov, Yu. N.;
- Krasil’nik, Z. F.;
- Kuznetsov, O. A.;
- Lobanov, D. N.;
- Novikov, A. V.;
- Shaleev, M. V.
Publication type:
Article
Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 234, doi. 10.1134/S1063782606020229
By:
- Berashevich, J. A.;
- Lazarouk, S. K.;
- Borisenko, V. E.
Publication type:
Article
Unusual photoelectric properties of polymeric composites containing heteropolynuclear complexes of transition metals.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 240, doi. 10.1134/S1063782606020230
By:
- Davidenko, N. A.;
- Kokozay, V. V.;
- Davidenko, I. I.;
- Nesterova, O. V.;
- Shevchenko, D. V.
Publication type:
Article

Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 2

The effect of the hydrogen state in lattice on the introduction efficiency of donor centers in oxygen-containing silicon.

Stability of the photoresponse of Cd<sub>1− x </sub>Zn<sub>x</sub>Te crystals.

Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type.

Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals.

Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals.

Morphology, twinning, and photoluminescence of ZnTe crystals grown by chemical synthesis from vapor-phase components.

Monte Carlo simulation of the Dember effect in n-InAs exposed to femtosecond pulse laser excitation.

Scattering of conduction electrons at a spatially correlated system of charges in a heavily doped GaAs: Te semiconductor.

Photosensitivity of Pb<sub>1− x </sub>Sn<sub>x</sub>Te:In films in the terahertz region of the spectrum.

Conduction mechanisms of magnetic semiconductors with a garnet structure in relation to variable-valence impurity concentration.

A mechanism of variation in the electrical properties of polycrystalline p-PbSe films as a result of irradiation with α particles.

A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon.

Dynamics of the defects recharging in coarse-grained p-CdTe films.

Methods for the doping of silicon layers in growth by sublimation MBE.

A manifestation of the tunneling conductivity of a thin-gate insulator in the generation kinetics of minority carriers in metal-insulator-semiconductor structures.

Properties of the CuInS<sub>2</sub> surface and the effect of organic layers.

Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation.

Persistent IR photoconductivity in InAs/GaAs structures with QD layers.

Optical absorption and scattering at one-particle states of charge carriers in semiconductor quantum dots.

The band structure and photoluminescence in a Ge<sub>0.8</sub>Si<sub>0.2</sub>/Ge<sub>0.1</sub>Si<sub>0.9</sub> superlattice with vertically correlated quantum dots.

Special features of the formation of Ge(Si) islands on the relaxed Si<sub>1−x</sub>Ge<sub>x</sub>/Si(001) buffer layers.

Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier.

Unusual photoelectric properties of polymeric composites containing heteropolynuclear complexes of transition metals.