Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 1

Results: 22

Doping of epitaxial layers and heterostructures based on HgCdTe.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 1, doi. 10.1134/S1063782606010015
By:
- Mynbaev, K.D.;
- Ivanov-Omskiĭ, V.I.
Publication type:
Article
Relaxation of photoexcited silver chloride.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 22, doi. 10.1134/S1063782606010027
By:
- Klyuev, V.G.;
- Gerasimenko, Yu.V.;
- Korobkina, N.I.
Publication type:
Article
Thermoelectric efficiency of single crystal semiconducting ruthenium silicide.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 27, doi. 10.1134/S1063782606010039
By:
- Krivosheev, A.E.;
- Ivanenko, L.I;
- Filonov, A.B.;
- Shaposhnikov, V.L.;
- Behr, G.;
- Schumann, J.;
- Borisenko, V.E.
Publication type:
Article
Dielectric properties of polycrystalline ZnS.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 33, doi. 10.1134/S1063782606010040
By:
- Shevarenkov, D.N.;
- Shchurov, A.F.
Publication type:
Article
A Mössbauer study of Eu donor centers in PbS.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 36, doi. 10.1134/S1063782606010052
By:
- Khuzhakulov, É.S.
Publication type:
Article
Effect of band inversion on the phonon spectra of the Hg1- x ZnxTe alloys.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 39, doi. 10.1134/S1063782606010064
By:
- Vodop’yanov, L.K.;
- Kucherenko, I.V.;
- Marchelli, A.;
- Burattini, E.;
- Piccinini, M.;
- Cestelli Guidi, M.;
- Tribulet, R.
Publication type:
Article
A comparative analysis of the dissociation kinetics models for silane molecules on the surface at epitaxial growth, of silicon films, in vacuum.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 43, doi. 10.1134/S1063782606010076
By:
- Orlov, L.;
- Smyslova, T.
Publication type:
Article
Specific features of photoconductivity spectra of the CdTe/CdHgTe epitaxial graded-gap heterostructures.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 50, doi. 10.1134/S1063782606010088
By:
- Vlasenko, A.I.;
- Vlasenko, Z.K
Publication type:
Article
Physical properties of SnO2 films subjected to incoherent pulsed radiation.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 55, doi. 10.1134/S106378260601009X
By:
- Rembeza, S.I.;
- Rembeza, E.S.;
- Svistova, T.V.;
- Borsyakova, O.I.
Publication type:
Article
Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 59, doi. 10.1134/S1063782606010106
By:
- Zakharov, M.V.;
- Kagadei, V.A.;
- L’vova, T.N.;
- Nefedtsev, E.V.;
- Oskomov, K.V.;
- Proskurovsky, D.I.;
- Romanenko, S.V.;
- Fattakhov, Ya.V.;
- Khaibullin, I.B.
Publication type:
Article
Effect of γ-ray radiation on photosensitivity of ZnO/CuIn3Se5 heterojunctions.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 64, doi. 10.1134/S1063782606010118
By:
- Baĭramov, B.Kh.;
- Bodnar’, I.V.;
- Emtsev, V.V.;
- Poloskin, D.S.;
- Rud’, V.Yu.;
- Rud’, Yu.V.;
- Yakushev, M.V.
Publication type:
Article
Radiative recombination in Zn1- x MnxTe/Zn0.59Mg0.41Te quantum well structures: Exciton emission and intracenter luminescence.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 67, doi. 10.1134/S106378260601012X
By:
- Agekyan, V.F.;
- Vasil’ev, N.N.;
- Serov, A.Yu.;
- Stepanov, Yu.A.;
- Tazaev, U.V.;
- Filosofov, N.G.;
- Karczewski, G.
Publication type:
Article
Effect of boron ion implantation and subsequent anneals on the properties of Si nanocrystals.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 72, doi. 10.1134/S1063782606010131
By:
- Kachurin, G.A.;
- Cherkova, S.G.;
- Volodin, V.A.;
- Marin, D.M.;
- Tetel’baum, D.I.;
- Becker, H.
Publication type:
Article
Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 79, doi. 10.1134/S1063782606010143
By:
- Tarasov, G.G.;
- Zhuchenko, Z.Ya.;
- Lisitsa, M.P.;
- Mazur, Yu.I.;
- Wang, Zh.M.;
- Salamo, G.J.;
- Warming, T.;
- Bimberg, D.;
- Kissel, H.
Publication type:
Article
Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 84, doi. 10.1134/S1063782606010155
By:
- Savel’ev, A.V.;
- Maksimov, M.V.;
- Ustinov, V.M.;
- Seĭsyan, R.P.
Publication type:
Article
Precision of quantization of the hall conductivity in a finite-size sample: Power law.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 89, doi. 10.1134/S1063782606010167
By:
- Greshnov, A.A.;
- Kolesnikova, É.N.;
- Zegrya, G.G.
Publication type:
Article
Exciton characteristics and exciton luminescence of silicon quantum dot structures.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 94, doi. 10.1134/S1063782606010179
By:
- Kupchak, I.M.;
- Korbutyak, D.V.;
- Kryuchenko, Yu.V.;
- Sachenko, A.V.;
- Sokolovskiĭ, I.O.;
- Sreseli, O.M.
Publication type:
Article
Impedance spectroscopy of ultrafine-grain SnO2 ceramics with a variable grain size.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 104, doi. 10.1134/S1063782606010180
By:
- Vasil’ev, R.B.;
- Dorofeev, S.G.;
- Rumyantseva, M.N.;
- Ryabova, L.I.;
- Gas’kov, A.M.
Publication type:
Article
Hopping ε2 conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 108, doi. 10.1134/S1063782606010192
By:
- Zvyagin, I.P.;
- Kurova, I.A.;
- Nal’gieva, M.A.;
- Ormont, N.N.
Publication type:
Article
Effect of a rear contact on the electrical properties of the CdS/CdTe-based thin-film solar cells.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 113, doi. 10.1134/S1063782606010209
By:
- Khripunov, G.S.
Publication type:
Article
Nonuniformity of carrier injection and the degradation of blue LEDs.
Published in:
Semiconductors, 2006, v. 40, n. 1, p. 118, doi. 10.1134/S1063782606010210
By:
- Bochkareva, N.I.;
- Efremov, A.A.;
- Rebane, Yu. T.;
- Gorbunov, R.I.;
- Klochkov, A.V.;
- Shreter, Yu.G.
Publication type:
Article
Erratum.
Published in:
2006
By:
- Ageeva, N.N.;
- Bronevoi, I.L.;
- Krivonosov, A.N.;
- Kumekov, S.E.;
- Nalet, T.A.;
- Stegantsov, S.V.
Publication type:
Correction Notice

Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 1

Doping of epitaxial layers and heterostructures based on HgCdTe.

Relaxation of photoexcited silver chloride.

Thermoelectric efficiency of single crystal semiconducting ruthenium silicide.

Dielectric properties of polycrystalline ZnS.

A Mössbauer study of Eu donor centers in PbS.

Effect of band inversion on the phonon spectra of the Hg<sub>1- x </sub>Zn<sub>x</sub>Te alloys.

A comparative analysis of the dissociation kinetics models for silane molecules on the surface at epitaxial growth, of silicon films, in vacuum.

Specific features of photoconductivity spectra of the CdTe/CdHgTe epitaxial graded-gap heterostructures.

Physical properties of SnO<sub>2</sub> films subjected to incoherent pulsed radiation.

Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons.

Effect of γ-ray radiation on photosensitivity of ZnO/CuIn<sub>3</sub>Se<sub>5</sub> heterojunctions.

Radiative recombination in Zn<sub>1- x </sub>Mn<sub>x</sub>Te/Zn<sub>0.59</sub>Mg<sub>0.41</sub>Te quantum well structures: Exciton emission and intracenter luminescence.

Effect of boron ion implantation and subsequent anneals on the properties of Si nanocrystals.

Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures.

Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures.

Precision of quantization of the hall conductivity in a finite-size sample: Power law.

Exciton characteristics and exciton luminescence of silicon quantum dot structures.

Impedance spectroscopy of ultrafine-grain SnO<sub>2</sub> ceramics with a variable grain size.

Hopping ε<sub>2</sub> conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature.

Effect of a rear contact on the electrical properties of the CdS/CdTe-based thin-film solar cells.

Nonuniformity of carrier injection and the degradation of blue LEDs.

Erratum.